公开(公告)号：US20130128659A1

公开(公告)日：2013-05-23

申请号：US13683239

申请日：2012-11-21

Applicant: CROCUS TECHNOLOGY SA

Inventor： Ioan Lucian Prejbeanu

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3263 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic random access memory (MRAM) element suitable for a thermally-assisted write operation and for a self-referenced read operation, comprising a magnetic tunnel junction portion having a first portion and a second portion, each portion comprising a storage layer, a sense layer, and a tunnel barrier layer; the magnetic tunnel junction further comprising an antiferromagnetic layer between the two storage layers and pinning a storage magnetization of each of the storage layers below a critical temperature, and freeing them at and above the critical temperature; such that, during a write operation, a free magnetization of each of the sense layer is magnetically saturable according to a direction of a write magnetic field when applied; and the storage magnetizations are switchable in a direction substantially parallel and corresponding to the direction of the saturated free magnetizations.

Abstract translation: 适用于热辅助写入操作和自参考读取操作的磁性随机存取存储器（MRAM）元件，包括具有第一部分和第二部分的磁性隧道结部分，每个部分包括存储层，感测层 ，以及隧道势垒层; 所述磁隧道结还包括在所述两个存储层之间的反铁磁层，并且将每个所述存储层的存储磁化固定在临界温度以下，并在临界温度以上使其释放; 使得在写入操作期间，每个感测层的自由磁化在施加时根据写入磁场的方向是磁性可饱和的; 并且存储磁化可以在基本平行的方向上切换并且对应于饱和自由磁化的方向。

公开(公告)号：US20240019509A1

公开(公告)日：2024-01-18

申请号：US18251296

申请日：2021-10-28

Applicant: CROCUS Technology SA

Inventor： Jeffrey Childress ,  Nikita Strelkov ,  Andrey Timopheev

IPC: G01R33/09 ,  G01R33/00 ,  H01F1/00

CPC classification number: G01R33/098 ,  G01R33/093 ,  G01R33/0052 ,  H01F1/0009

Abstract: A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

公开(公告)号：US20230134728A1

公开(公告)日：2023-05-04

申请号：US17905278

申请日：2021-02-22

Applicant: CROCUS Technology SA

Inventor： Robert Zucker ,  Scott Fritz

IPC: G01B7/30 ,  G01D5/14

Abstract: Magnetic sensor for measuring an external magnetic field angle in a two-dimensional plane, including: a first and second sensing unit outputting, respectively, a first signal sin(θ) and a second signal cos(θ); a first multiplying DAC receiving the first signal and a first digital input sin(f*t) and outputting a first modulated output signal; a second multiplying DAC receiving the second signal and a second digital input cos(f*t) and outputting a second modulated output signal; a first RC filter receiving the first modulated output signal and outputting a first filtered signal sin(θ)*sin(f*t+RCd); a second RC filter receiving the second modulated output signal and outputting a second filtered signal sin(θ)*sin(f*t+RCd); an adder adding the first and second filtered signals and outputting a summed signal cos(f*t+RCd+θ); and an angle extracting unit for measuring the phase delay between the summed signal and a synchronization signal and determining the angle from the phase delay.

公开(公告)号：US20230066027A1

公开(公告)日：2023-03-02

申请号：US17760109

申请日：2021-01-29

Applicant: CROCUS Technology SA

Inventor： Léa Cuchet ,  Andrey Timopheev ,  Jeffrey Childress

IPC: G01R33/00 ,  G01R33/09

Abstract: A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.

公开(公告)号：US10914795B2

公开(公告)日：2021-02-09

申请号：US16280480

申请日：2019-02-20

Applicant: Crocus Technology Inc.

Inventor： Anuraag Mohan

IPC: G01R33/00 ,  G01R33/09

Abstract: A circuit has a magnetic sensor that produces an uncompensated magnetic sensor output signal. A temperature sensor produces an ambient temperature signal. A compensation circuit is connected to the magnetic sensor and the temperature sensor. The compensation circuit is configured to add a computed temperature compensation signal to the uncompensated magnetic sensor output signal to produce a magnetic sensor temperature compensated output signal that reduces thermally induced variation of the uncompensated magnetic sensor output signal.

公开(公告)号：US20200150195A1

公开(公告)日：2020-05-14

申请号：US16683749

申请日：2019-11-14

Applicant: Crocus Technology Inc.

Inventor： Robert D. ZUCKER

IPC: G01R33/09

Abstract: An apparatus includes a magnetic bridge sensor generating an output in response to a sensed magnetic field. An amplification stage processes the output to produce an amplified output signal. A field-effect transistor with a gate receives the amplified output signal, a source node receives a current source and a drain node is connected to the magnetic sensor. A regulator is connected to the magnetic bridge sensor. A first contact is connected to the source node to produce a voltage signal characterizing the sensed magnetic field. A second contact is connected to the magnetic bridge sensor and the regulator.

公开(公告)号：US10460779B2

公开(公告)日：2019-10-29

申请号：US15891233

申请日：2018-02-07

Applicant: Crocus Technology Inc.

Inventor： Michael Gaidis ,  Thao Tran

IPC: G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: An apparatus has a reference magnetic tunnel junction with a high aspect ratio including a reference layer with magnetization along a minor axis and a storage layer with magnetization along a major axis. The storage layer magnetization is substantially perpendicular to the magnetization along the minor axis. The magnetization orientation between the minor axis and the major axis is maintained by shape anisotropy caused by the high aspect ratio.

公开(公告)号：US10191719B2

公开(公告)日：2019-01-29

申请号：US15552508

申请日：2016-02-22

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera ,  Quentin Stainer

IPC: G06F7/58

Abstract: A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

公开(公告)号：US10157652B2

公开(公告)日：2018-12-18

申请号：US15578841

申请日：2016-05-31

Applicant: CROCUS Technology SA

Inventor： Quentin Stainer

IPC: G11C11/00 ,  G11C11/16 ,  H03F15/00 ,  G06G7/14 ,  H01F10/32 ,  H01L43/08

Abstract: A magnetic device configured to perform an analog adder circuit function and including a plurality of magnetic units. Each magnetic unit includes n magnetic tunnel junctions electrically connected in series via a current line. Each magnetic tunnel junction includes a storage magnetic layer having a storage magnetization, a sense magnetic layer having a sense magnetization, and a tunnel barrier layer. Each magnetic unit also includes n input lines, each being configured to generate a magnetic field adapted for varying a direction of the sense magnetization and a resistance of the n magnetic tunnel junctions, based on an input. Each of the n magnetic units is configured to add said n inputs to generate an output signal that varies in response to the n resistances.

公开(公告)号：US10115445B2

公开(公告)日：2018-10-30

申请号：US15741805

申请日：2016-06-27

Applicant: CROCUS Technology SA

Inventor： Quentin Stainer

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01L43/02

Abstract: A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions—electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.