ORGANIC SEMICONDUCTING BLEND
    36.
    发明申请
    ORGANIC SEMICONDUCTING BLEND 审中-公开
    有机半导体混合物

    公开(公告)号:US20160035987A1

    公开(公告)日:2016-02-04

    申请号:US14776569

    申请日:2014-03-12

    Abstract: A blend for preparing a semiconducting layer an organic electronic device comprises a polymer, a first non-polymeric semiconductor, a second non-polymeric semiconductor and a third non-polymeric semiconductor. The blend enables higher concentration solutions of semiconductor and a broader solution processing window as compared to blends comprising one polymer and one non-polymeric semiconductor. For example, a blend comprising F8-TFB and three different substituted benzothiophene derivatives shows three-fold higher average saturation mobility in OTFTs as compared to a blend of one polymer and one of these benzo thiophene derivatives and consistent peak saturation mobilities after drying at 60° C., 80° C. and 100° C. even after a 2 minute delay.

    Abstract translation: 用于制备半导体层有机电子器件的共混物包括聚合物,第一非聚合物半导体,第二非聚合物半导体和第三非聚合物半导体。 与包含一种聚合物和一种非聚合物半导体的共混物相比,该共混物能够实现半导体的较高浓度溶液和较宽的溶液处理窗口。 例如,与一种聚合物和一种这些苯并噻吩衍生物的混合物相比,包含F8-TFB和三种不同取代的苯并噻吩衍生物的共混物在OTFT中显示出三倍的平均饱和迁移率,并且在60°干燥后具有一致的峰值饱和迁移率 即使经过2分钟的延迟,也可以是80℃和100℃。

    METHOD FOR PREPARING A SEMICONDUCTING LAYER
    38.
    发明申请
    METHOD FOR PREPARING A SEMICONDUCTING LAYER 有权
    制备半导体层的方法

    公开(公告)号:US20150188053A1

    公开(公告)日:2015-07-02

    申请号:US14409804

    申请日:2013-06-17

    Abstract: A method for preparing a semiconducting layer of an organic electronic device comprising: (i) depositing said semiconducting layer from a solution comprising a polymeric semiconductor, a non-polymeric semiconductor, a first aromatic solvent and a second aromatic solvent, wherein said second aromatic solvent has a boiling point that is at least 15° C. higher than the boiling point of said first aromatic solvent; and (ii) heating said deposited layer to evaporate said solvent, wherein said first aromatic solvent is of formula (I): wherein R1 is selected from C1-6 alkyl and OC1-6 alkyl; and R2 and R3 are each independently selected from H and CC1-6 alkyl.

    Abstract translation: 一种制备有机电子器件的半导体层的方法,包括:(i)从包含聚合半导体,非聚合半导体,第一芳族溶剂和第二芳族溶剂的溶液沉积所述半导体层,其中所述第二芳族溶剂 具有比所述第一芳族溶剂的沸点高至少15℃的沸点; 和(ii)加热所述沉积层以蒸发所述溶剂,其中所述第一芳族溶剂具有式(I):其中R 1选自C 1-6烷基和OC 1-6烷基; 并且R 2和R 3各自独立地选自H和C 1-6烷基。

    METAL COMPLEX AND LIGHT-EMITTING DEVICE COMPRISING THE METAL COMPLEX
    40.
    发明申请
    METAL COMPLEX AND LIGHT-EMITTING DEVICE COMPRISING THE METAL COMPLEX 审中-公开
    金属复合材料和包含金属复合材料的发光装置

    公开(公告)号:US20140306203A1

    公开(公告)日:2014-10-16

    申请号:US14250792

    申请日:2014-04-11

    CPC classification number: H01L51/0085 H01L51/5016

    Abstract: A metal complex is provided represented by Formula (1): wherein M represents a prescribed metal atom; RP1, RP2, RP3, RP4, RP5, and RP6 each independently represent a hydrogen atom or a prescribed group, wherein RP1 and RP2 may be bonded together to form a ring structure, RP2 and RP3 may be bonded together to form a ring structure, and RP3 and RP4 may be bonded together to form a ring structure, provided that at least one of RP1, RP2, RP3, and RP4 is a dendron and at least one of RP5 and RP6 is an aryl group or a monovalent heterocyclic group; m is an integer of 1 to 3 and n is an integer of 0 to 2, wherein m+n is 2 or 3; and a moiety represented by Formula (2) represents a bidentate ligand: wherein Rx and Ry each independently represent a prescribed atom.

    Abstract translation: 提供由式(1)表示的金属络合物:其中M表示规定的金属原子; RP1,RP2,RP3,RP4,RP5和RP6各自独立地表示氢原子或规定的基团,其中RP1和RP2可以结合在一起形成环结构,RP2和RP3可以结合在一起形成环结构, RP3和RP4可以结合在一起形成环结构,条件是RP1,RP2,RP3和RP4中的至少一个是树突,并且RP5和RP6中的至少一个是芳基或1价杂环基; m为1〜3的整数,n为0〜2的整数,m + n为2或3。 和由式(2)表示的部分表示双齿配体:其中Rx和Ry各自独立地表示规定的原子。

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