公开(公告)号：US08338868B2

公开(公告)日：2012-12-25

申请号：US12626343

申请日：2009-11-25

Applicant: Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

Inventor： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Abstract translation: 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

公开(公告)号：US08304859B2

公开(公告)日：2012-11-06

申请号：US12847174

申请日：2010-07-30

Applicant: Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L21/02 ,  H01L27/14

CPC classification number: H01L25/167 ,  G02B6/124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.

Abstract translation: 提供了一种光互连装置。 光学互连装置包括：布置在绝缘体上（锗）绝缘体（GOI）基板上的第一半导体芯片; 在GOI基板上的光发射器，光发射器接收来自第一半导体芯片的电信号并输出​​光信号; 在GOI基板上的光检测器，光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片，第二半导体芯片从光检测器接收电信号。

公开(公告)号：US20120248404A1

公开(公告)日：2012-10-04

申请号：US13406544

申请日：2012-02-28

Applicant: Jong Moo LEE ,  Han Youl RYU ,  Eun Soo NAM ,  Sung Bum BAE

Inventor： Jong Moo LEE ,  Han Youl RYU ,  Eun Soo NAM ,  Sung Bum BAE

IPC: H01L33/04 ,  H01L33/32

CPC classification number: H01L33/0075 ,  H01L33/325

Abstract: The present disclosure relates to a gallium-nitride light emitting diode and a manufacturing method thereof and the gallium-nitride light emitting diode includes an n-type nitride semiconductor layer formed on a substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type doped intermediate layer formed on the active layer; and a p-type nitride semiconductor layer formed on the intermediate layer.

Abstract translation: 本发明涉及氮化镓发光二极管及其制造方法，氮化镓发光二极管包括在基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型掺杂中间层; 以及形成在中间层上的p型氮化物半导体层。

公开(公告)号：US08183612B2

公开(公告)日：2012-05-22

申请号：US12498918

申请日：2009-07-07

Applicant: Young-Jun Chong ,  Eun-Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bong-Ki Mheen

Inventor： Young-Jun Chong ,  Eun-Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bong-Ki Mheen

IPC: H01L29/72

CPC classification number: H01L31/1075 ,  H01L31/02327

Abstract: Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector.

Abstract translation: 提供一种光接收机及其形成方法。 光接收器包括透镜，光电检测器和异质结双极晶体管。 透镜附着到基板的背面。 光检测器设置在基板的顶表面上。 异质结双极晶体管设置在基板的顶表面上。 透镜会聚光入射光信号，以将光信号发送到光检测器。

公开(公告)号：US08058658B2

公开(公告)日：2011-11-15

申请号：US12421130

申请日：2009-04-09

Applicant: Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

Inventor： Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

IPC: H01L27/15

CPC classification number: H01L25/167 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/30107 ,  H01L2924/00

Abstract: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

Abstract translation: 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅（SOI））衬底上的第一半导体芯片，发光体，光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号，将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。

公开(公告)号：US20110140825A1

公开(公告)日：2011-06-16

申请号：US12968022

申请日：2010-12-14

Applicant: Seong-il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Seong-il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01F27/30

CPC classification number: H01F17/0006 ,  H01F2017/0086 ,  H01L28/10

Abstract: Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.

Abstract translation: 提供一种电感器。 电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子，形成在半导体衬底的一侧上的第一导电线，并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子 形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线，以及形成在所述半导体衬底的另一侧上并电连接的第三导电线 连接到第一至第四导电端子中的第一和第三导电端子。

公开(公告)号：US20110140168A1

公开(公告)日：2011-06-16

申请号：US12769198

申请日：2010-04-28

Applicant: Jae-Sik SIM ,  Bongki Mheen ,  Myungsook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik SIM ,  Bongki Mheen ,  Myungsook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/107

CPC classification number: H01L31/02327 ,  H01L31/1075

Abstract: Provided is an avalanche photodetector with an integrated micro lens. The avalanche photodetector includes a light absorbing layer on a semiconductor substrate, an amplification layer on the light absorbing layer, a diffusion layer within the amplification layer, and the micro lens disposed corresponding to the diffusion layer. The micro lens includes a first refractive layer and a second refractive layer having a refractive index less than that of the first refractive layer.

Abstract translation: 提供了具有集成微透镜的雪崩光电探测器。 雪崩光电检测器包括半导体衬底上的光吸收层，光吸收层上的放大层，放大层内的扩散层和对应于扩散层设置的微透镜。 微透镜包括折射率小于第一折射层的折射率的第一折射层和第二折射层。

公开(公告)号：US20110133059A1

公开(公告)日：2011-06-09

申请号：US12942338

申请日：2010-11-09

Applicant: Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

Inventor： Kisoo KIM ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

IPC: G01J1/44

CPC classification number: G01J1/46

Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

Abstract translation: 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。

公开(公告)号：US20100173443A1

公开(公告)日：2010-07-08

申请号：US12724667

申请日：2010-03-16

Applicant: Eun Soo NAM ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

Inventor： Eun Soo NAM ,  Myoung Sook Oh ,  Ho Young Kim ,  Young Jun Chong ,  Hyun Kyu Yu

IPC: H01L31/18 ,  H01L31/14

CPC classification number: H01L27/14643 ,  G01S7/4863 ,  G01S17/89 ,  H01L27/14681 ,  H04N5/369

Abstract: A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically separated from each other using a polyamide, whereby a PN junction surface of the photodiode is buried to reduce surface leakage current and improve electrical reliability, and the structure of the control devices can be simplified to improve image signal reception characteristics.

Abstract translation: 一种制造与用于激光雷达图像信号单片集成的读出集成电路（ROIC）集成的光电检测器阵列装置的方法。 在InP衬底上同时形成用于选择和输出激光雷达图像信号的检测器阵列器件，光电二极管和控制器件。 此外，在InP衬底上同时形成光电二极管和控制装置之后，使用聚酰胺将光电二极管和控制装置彼此电分离，由此埋入光电二极管的PN结表面以减小表面泄漏电流， 提高电气可靠性，可以简化控制装置的结构，提高图像信号的接收特性。

公开(公告)号：US20100133590A1

公开(公告)日：2010-06-03

申请号：US12626343

申请日：2009-11-25

Applicant: Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

Inventor： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/14

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

Abstract: An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

Abstract translation: 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。