公开(公告)号：US06811960B2

公开(公告)日：2004-11-02

申请号：US10436742

申请日：2003-05-12

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0758 ,  C07F7/1804 ,  C08F30/08 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  C08F222/06 ,  C08F232/08 ,  C08F2222/1013

Abstract: The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.

Abstract translation: 本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光 特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

公开(公告)号：US06737217B2

公开(公告)日：2004-05-18

申请号：US10107646

申请日：2002-03-27

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: G03F7/0046 ,  G03F7/0392 ,  G03F7/0395

Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymer are disclosed. The photoresist polymers include photoresist monomers containing fluorine-substituted benzylcarboxylate group represented by Formula 1. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is suitable for a process using ultraviolet light source such as VUV (157 nm). In the Formula, R1, R2, R3 and m are defined in the specification.

Abstract translation: 公开了光致抗蚀剂单体，由其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 光致抗蚀剂聚合物包括由式1表示的氟取代的苄基羧酸酯基的光致抗蚀剂单体。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 由于组合物在193nm和157nm波长处具有低吸光度，因此适用于使用紫外光源如VUV（157nm）的方法。在式中，R1，R2，R3和m在本说明书中定义。

公开(公告)号：US06630281B2

公开(公告)日：2003-10-07

申请号：US09902152

申请日：2001-07-10

Applicant: Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7038

CPC classification number: G03F7/0382 ,  G03F7/38 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/128

Abstract: Photoresist compositions for a Top-surface Imaging Process by Silylation (TIPS), and a process for forming a positive pattern according to the TIPS using the same. The photoresist composition for the TIPS comprises a cross-linker of following Formula 1 or 2. A protecting group of the cross-linker and a hydroxyl group of the photoresist polymer are selectively crosslinked in the exposed region, and the residual hydroxyl group reacts to a silylating agent in the non-exposed region by silylation. Thus, the non-exposed region only remains after the dry-development, thereby forming a positive pattern. In addition, the photoresist composition of the present invention is suitable for the TIPS lithography using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm). wherein, R1, R2, R3, R4, R5, R6 and R7 are as defined in the specification.

Abstract translation: 用于通过甲硅烷基化（TIPS）的顶表面成像方法的光致抗蚀剂组合物，以及根据使用其的TIPS形成阳性图案的方法。 用于TIPS的光致抗蚀剂组合物包含下式1或2的交联剂。交联剂的保护基团和光致抗蚀剂聚合物的羟基在暴露区域中选择性交联，并且残余的羟基与 通过甲硅烷基化在非暴露区域中的甲硅烷基化剂。 因此，未曝光区域仅在干显影之后保留，从而形成正图案。 另外，本发明的光致抗蚀剂组合物适用于使用诸如ArF（193nm），VUV（157nm）和EUV（13nm）的光源的TIPS光刻，其中R1，R2，R3，R4，R5 R6和R7如本说明书中所定义。

公开(公告)号：US06589707B2

公开(公告)日：2003-07-08

申请号：US09788181

申请日：2001-02-15

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0758 ,  C07F7/1804 ,  C08F30/08 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  C08F222/06 ,  C08F232/08 ,  C08F2222/1013

Abstract: The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist monomers of the present invention comprise a moiety of Formula 4: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in a thin resist process and a bilayer photoresist process. Moreover, photoresist polymers of the present invention have a high contrast ratio between an exposed region and a non-exposed region.

Abstract translation: 本发明提供光致抗蚀剂单体，由其衍生的光致抗蚀剂聚合物，用于制备这种光致抗蚀剂聚合物的方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光 特别地，本发明的光致抗蚀剂单体包含式4的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

公开(公告)号：US06455225B1

公开(公告)日：2002-09-24

申请号：US09640261

申请日：2000-08-16

Applicant: Keun Kyu Kong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Keun Kyu Kong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C08F32/00 ,  C07C43/305 ,  C07C2602/42 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106

Abstract: The present invention provides novel photoresist monomers, and photoresist polymers derived from monomers comprising the same. The photoresist monomers of the present invention are represented by the following formula: where Z1, Z2, R1, R2, R3, R4, R5 and p are those defined herein. The photoresist compositions comprising the photoresist polymers of the present invention have excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

Abstract translation: 本发明提供新型光致抗蚀剂单体和衍生自包含其的单体的光致抗蚀剂聚合物。 本发明的光致抗蚀剂单体由下式表示：其中Z 1，Z 2，R 1，R 2，R 3，R 4，R 5和p是本文定义的那些。 包含本发明的光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

公开(公告)号：US06416926B1

公开(公告)日：2002-07-09

申请号：US09630818

申请日：2000-08-02

Applicant: Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/039 ,  G03F7/0045

Abstract: The present invention provides heterobicyclo compounds of the formula: and a method for preparing the same, where Z, X, R1, R2, and m are those defined herein. Compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful, for example, ultra-violet wavelength photolithography processes.

Abstract translation: 本发明提供下式的异二环化合物及其制备方法，其中Z，X，R 1，R 2和m为本文定义的那些。 本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于例如紫外线波长光刻工艺。

公开(公告)号：US06368771B1

公开(公告)日：2002-04-09

申请号：US09627627

申请日：2000-07-28

Applicant: Cha Won Koh ,  Geun Su Lee ,  Jae Chang Jung ,  Myoung Soo Kim

Inventor： Cha Won Koh ,  Geun Su Lee ,  Jae Chang Jung ,  Myoung Soo Kim

IPC: G03F7004

CPC classification number: G03F7/0758 ,  G03F7/0395

Abstract: The present invention discloses photoresist polymers and photoresist compositions containing the same. The photoresist polymer comprises repeating units derived from (a) a compound of Chemical Formula 1; (b) a compound of Chemical Formula 2; (c) a compound of Chemical Formula 3; and optionally (d) maleic anhydride. Photoresist compositions containing the polymers of the present invention have superior etching resistance, heat resistance and adhesiveness, are easily developed in the 2.38% aqueous TMAH solution, and are therefore suitable for lithography processes using ultraviolet light sources when fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, R3, R4, R′, R″, R′″, X, Y, V, W, i and j are as described herein.

Abstract translation: 本发明公开了含有它的光致抗蚀剂聚合物和光致抗蚀剂组合物。 光致抗蚀剂聚合物包含衍生自（a）化学式1化合物的重复单元; （b）化学式2的化合物; （c）化学式3的化合物; 和任选地（d）马来酸酐。 含有本发明聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，容易在2.38％TMAH水溶液中显影，因此适用于在制造高集成度的微电路时使用紫外光源的光刻工艺 半导体器件：其中R，R *，R 3，R 4，R'，R“，R”'，X，Y，V，W，i和j如本文所述。

公开(公告)号：US06291131B1

公开(公告)日：2001-09-18

申请号：US09383547

申请日：1999-08-26

Applicant: Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Chi Hyeong Roh ,  Min Ho Jung ,  Keun Kyu Kong ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C07D493/08 ,  C07C61/13 ,  C07C69/753 ,  C07D495/08 ,  C08F222/06 ,  C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y02P20/55 ,  Y10S430/127

Abstract: The present invention relates to novel monomers for preparing photoresist polymers, polymers thereof, and photoresist compositions using the same. The monomers of the iinvention are represented by the following Chemical Formula 1: wherein, X and Y individually represent oxygen, sulfur, CH2 or CH2CH2; n is an integer of 1 to 5; and R1, R2, R3 and R4 individually represent hydrogen, C1-C10 alkyl having substituent(s) on its main or branched chain, C1-C10 ester having substituent(s) on its main or branched chain, C1-C10 ketone having substituent(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) on its main or branched chain, C1-C10 acetal having substituent(s) on its main or branched chain, C1-C10 alkyl having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 ester having substituent(s) including one or more hydroxyl group(s ) on its main or branched chain, C1-C10 ketone having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, C1-C10 carboxylic acid having substituent(s) including one or more hydroxyl group(s) on its main or branched chain, or C1-C10 acetal having substituent(s) including one or more hydroxyl group(s) on its main or branched chain; provided that at least one of R1 to R4 represent(s) —COO—R′—OH wherein R′ is a linear or branched chain alkyl group with or without substituent(s) on its linear or branched chain. Polymers according to the present invention preferably comprise (i) a monomer of Chemical Formula 1 above as the first comonomer, (ii) a polyalicyclic derivative having one or more acid labile protective group(s) as the second comonomer, and (iii) at least one polymerization-enhancing monomer, preferably selected from the group consisting of maleic anhydride, maleimide derivatives, and combinations thereof. In order to increase photosensitivity, it is also preferable for the photoresist copolymer to comprise (iv) a polyalicyclic derivative having one or more carboxylic acid groups, as an additional comonomer.

公开(公告)号：US06200731B1

公开(公告)日：2001-03-13

申请号：US09465112

申请日：1999-12-16

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03C173

CPC classification number: C07D519/00 ,  C07C69/753 ,  Y10S430/115

Abstract: The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1: wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R′ and R″ individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.

Abstract translation: 本发明公开了由以下化学式1表示的光致抗蚀剂聚合物交联单体：<化学式1>其中V表示CH 2，CH 2 CH 2，氧或硫; Y选自直链或支链C 1-10烷基，氧和直链或支链C1-10醚; R'和R“分别表示H或CH 3; 我是1到5的数字; n为0〜3的数; 以及制备包含该光致抗蚀剂的光致抗蚀剂共聚物的方法。

公开(公告)号：US08202443B2

公开(公告)日：2012-06-19

申请号：US12833389

申请日：2010-07-09

Applicant: Geun Su Lee

Inventor： Geun Su Lee

IPC: B44C1/22

CPC classification number: C09K13/08 ,  H01L27/10852 ,  H01L28/91

Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

Abstract translation: 用于防止倾斜电容器的蚀刻组合物包含氢氟酸（HF），氟化铵（NH4F），烷基氟化铵（ReNH3F;其中Re是C1-C10直链或支链烷基），表面活性剂，醇化合物， 和水。 该组合物可以有效地抑制在形成电容器期间电容器的倾斜现象，从而可以确保电容器的存储节点的高度，并且可以制造具有改善的电容的电容器，并且该工艺可以适应于两者的生产 现在和未来的设备。