MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

    公开(公告)号:US20230393457A1

    公开(公告)日:2023-12-07

    申请号:US18034656

    申请日:2021-12-02

    CPC classification number: G03F1/32

    Abstract: Provided is a mask blank. A mask blank comprising a phase shift film on a transparent substrate, the phase shift film having a structure in which a first layer, a second layer, and a third layer are layered in this order on the transparent substrate, the first layer and the third layer including hafnium and oxygen, and the second layer including silicon and oxygen, wherein when thicknesses of the first layer, the second layer, and the third layer are represented by D1, D2, and D3, respectively, all relationships of (Expression 1-A) to (Expression 1-D) are satisfied, or all relationships of (Expression 2-A) to (Expression 2-D) are satisfied.

    POLARIZING GLASS AND OPTICAL ISOLATOR
    32.
    发明公开

    公开(公告)号:US20230393319A1

    公开(公告)日:2023-12-07

    申请号:US18234473

    申请日:2023-08-16

    Inventor: Yoshitaka YONEDA

    CPC classification number: G02B5/3058

    Abstract: The present invention provides a polarizing glass with better heat resistance than a conventional polarizing glass and an optical isolator including the polarizing glass. In the polarizing glass, metal layers in which many substantially needle-shaped metal fine particles are dispersed to be oriented parallel to one another are formed from both surfaces toward inside and a metal halide layer containing metal halide fine particles is formed between the metal layers. A total thickness of the polarizing glass is smaller than 0.12 mm, a thickness of each of the metal layers is 0.030 to 0.045 mm, and a thickness of the metal halide layer is 0.001 to 0.040 mm. Alternatively, the total thickness of the polarizing glass is smaller than 0.12 mm, the thickness of each of the metal layers is 0.010 to 0.030 mm, and the thickness of the metal halide layer is 0.001 to 0.060 mm.

    ILLUMINATION SYSTEM
    33.
    发明公开
    ILLUMINATION SYSTEM 审中-公开

    公开(公告)号:US20230389786A1

    公开(公告)日:2023-12-07

    申请号:US18023052

    申请日:2021-08-19

    CPC classification number: A61B1/0638 A61B1/0684 A61B1/0676 A61B1/041

    Abstract: It is provided an illumination apparatus, comprising a beam combiner comprising two dichroic reflective surfaces and configured to combine a first light from a first light source, a second light from a second light source, and a third light from a third light source into combined light; a combination of the second light passing through the combiner and the third light passing through the combiner is closer to the white point than each of the second light and the first light passing through the combining portion; or the third light passing through the combiner is closer to the white point than each of the second light and the first light passing through the combining portion.

    INTRAOCULAR LENS INJECTOR AND ITS DESIGN METHOD

    公开(公告)号:US20230372083A1

    公开(公告)日:2023-11-23

    申请号:US18044235

    申请日:2021-08-30

    Inventor: Kazunori KUDO

    CPC classification number: A61F2/167 A61F2240/001

    Abstract: There is provided an intraocular lens injector 1 that advances an intraocular lens 4 including an optical portion 41 with an optical function and support portions 42a and 42b that extend from the optical portion 41 through a tube while folding the lens, and emits the lens from a nozzle, wherein protrusions 15 are located at both the left and right corners at an upper side of an inner wall 30 of the tube, in a cross-sectional view perpendicular to an advancement direction of the intraocular lens 4, so that the protrusions 15 prevent the optical portion 41 and the support portions 42a, 42b from entering both the left and right corners, when the intraocular lens 4 is folded while advancing. Its related art is also provided.

    Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method

    公开(公告)号:US11815806B2

    公开(公告)日:2023-11-14

    申请号:US17990049

    申请日:2022-11-18

    CPC classification number: G03F1/32 G03F1/24 G03F7/2004

    Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

    SUBSTRATE FOR MAGNETIC DISK, MAGNETIC DISK, AND HARD DISK DRIVE APPARATUS

    公开(公告)号:US20230298623A1

    公开(公告)日:2023-09-21

    申请号:US18321166

    申请日:2023-05-22

    Inventor: Kinobu OSAKABE

    Abstract: A substrate for a magnetic disk includes a substrate main body having two main surfaces and an outer circumferential edge surface, and a film that is an alloy film containing Ni and P and provided on a surface of the substrate main body. A disk shape of the substrate main body has an outer diameter of 90 mm or more. A thickness T of the substrate that includes film thicknesses of sections of the film provided on the main surfaces is 0.520 mm or less. A total thickness D mm, which is a sum of the film thicknesses of the sections of the film on the main surfaces and the thickness T mm satisfy D≥0.0082/T−0.0015. A surface roughness maximum height Rz of the film provided on the outer circumferential edge surface is smaller than that of the substrate main body at the outer circumferential edge surface.

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