Abstract:
According to one embodiment, in an organic electroluminescence device, a first substrate has a first refractive index n1. A second substrate is joined to an upper surface of the first substrate and has a second refractive index n2 higher than the first refractive index n1. Multiple wedge-shaped metal lines are buried in the second substrate in such a manner that one side of the wedge-shaped metal line is flush with an upper surface of the second substrate. A transparent electrode is formed on the upper surface of the second substrate and the multiple metal lines. An insulating layer is formed on a portion of the transparent electrode opposed to the multiple metal lines. An organic light emitting layer is formed on the transparent electrode on which the insulating layer is formed. A metal electrode is formed on the organic light emitting layer.
Abstract:
According to one embodiment, an organic light-emitting diode includes an anode and a cathode arranged apart from each other, an emission layer, arranged between the anode and cathode, containing a host material of polyvinyl(2,7-difluorocarbazole), a blue-emitting phosphorescent material, and an electron transport material, and a hole transport layer of polyvinylcarbazole arranged adjacent to the emission layer on an anode side.
Abstract:
According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode arranged apart from each other, and an emissive layer interposed between the anode and the cathode and including a host material and an emitting dopant. The emitting dopant includes a copper complex represented by the formula (1): where Cu+ represents a copper ion, the ligand A represents a pyridine derivative having nitrogen as a coordinate element and may have a substituent, PR1R2R3 is a phosphine compound coordinating with Cu+, where R1, R2 and R3 may be the same or different, and represent a linear, branched or cyclic alkyl group having 6 or less carbon atoms or an aromatic cyclic group which may have a substituent, and X− represents a counter ion (counterion) where X represents F, Cl, Br, I, BF4, PF6, CH3CO2, CF3CO2, CF3SO3 or ClO4.
Abstract translation:根据一个实施例,提供了一种包括彼此分开布置的阳极和阴极的有机发光二极管和插在阳极和阴极之间并包括主体材料和发射掺杂剂的发射层。 发光掺杂剂包括由式(1)表示的铜络合物:其中Cu +表示铜离子,配体A表示以氮为坐标元素的吡啶衍生物,可以具有取代基,PR1R2R3为与Cu +配位的膦化合物, 其中R1,R2和R3可以相同或不同,表示具有6个或更少碳原子的直链,支链或环状烷基或可以具有取代基的芳族环状基团,X-表示抗衡离子(抗衡离子) 其中X表示F,Cl,Br,I,BF 4,PF 6,CH 3 CO 2,CF 3 CO 2,CF 3 SO 3或ClO 4。
Abstract:
According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode which are arranged apart from each other, an emissive layer arranged between the anode and the cathode including a blue emissive layer located at the anode side and a green and red emissive layer located at the cathode side, the blue emissive layer containing a host material and a blue fluorescent dopant, and the green and red emissive layer containing a host material and a green phosphorescent dopant and/or a red phosphorescent dopant.
Abstract:
A method of manufacturing a light emitting device. The method includes: mounting a light emitting chip on a substrate; forming a transparent resin portion and a phosphor layer by using a liquid droplet discharging apparatus, the transparent resin portion being formed in a shape of a dome and covering the light emitting chip to fill an exterior thereof on the substrate, a phosphor layer containing phosphor and being formed on an exterior of the transparent resin portion close to at least a top side thereof; and forming a reflecting layer at a position exterior of the transparent resin portion and the phosphor layer close to the substrate.
Abstract:
A method of manufacturing a semiconductor light emitting device. The method includes: mounting a semiconductor light emitting element on a flat substrate; covering the semiconductor light emitting element on the flat substrate by a cover layer in a domed shape to form a light emitting device, the cover layer including at least a phosphor layer and a coating resin layer that are laminated in order, so as to fill around the semiconductor light emitting element; measuring an emission condition of the light emitting device; and forming a convex lens unit on the outermost of the coating resin layer using a liquid droplet discharging apparatus to adjust an emission distribution of the light emitting device based on the measured emission condition.
Abstract:
An inkjet recording apparatus includes: a head unit including: an ultrasonic wave generation unit that generates ultrasonic waves; an ultrasonic wave focus unit that focuses the ultrasonic waves to an ultrasonic wave focus position; an ultrasonic wave transmission unit that propagates the ultrasonic waves from the ultrasonic wave focus unit; and a wall plate that covers the ultrasonic wave generation unit, the ultrasonic wave focus unit and the ultrasonic wave transmission unit; an annular film that rotates while sliding along an exterior of the head unit; a film drive mechanism that rotates the film; and an ink application unit that applies ink over the film to form an ink layer, wherein the ultrasonic wave focus position of the head unit is directing to a position of the ink layer so as to eject an ink from the ink layer.
Abstract:
Disclosed is a production process of an electronic circuit that can efficiently form a highly accurate electrically conductive pattern. The production process comprises the steps of: adhering insulating particles onto an electrically conductive base material to form an insulating pattern comprising a pattern region and a nonpattern region on the electrically conductive base material; adhering electrically conductive particles to the nonpattern region by first electrophoretic treatment; removing the pattern region by second electrophoretic treatment; and transferring the electrically conductive particles onto a recording medium to form an electrically conductive pattern of the electrically conductive particles onto the recording medium.
Abstract:
The present invention provides a semiconductor element having a semiconductor layer that has high carrier mobility and is easy to form. This semiconductor element includes a semiconductor layer made of TeI4, which has a clustering structure.