摘要:
According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.
摘要:
A motor controlling device includes an encoder to output pulse signals with a predetermined angle interval as a rotor of a motor is rotated. An energized phase of the motor is sequentially switched by detecting a rotation position of the rotor based on a value of counting the signals. An initial drive controlling portion executes an initial drive to switch the energized phase with a predetermined pattern after the device is activated so as to learn a relationship among the count value, the rotation position and the energized phase. An initial drive prohibiting portion prohibits the execution of the initial drive until a predetermined time is elapsed after the initial drive is finished.
摘要:
We search for a cultivation method for reducing the amount of mycotoxin contamination in wheat which has been an important pending question for the quality in actual producing field of wheat and the health hazard risk for customers.The present invention discloses a method of reducing the contamination amount of mycotoxin in cereals characterized in that one or more compounds A selected from the group consisting of ammonium salts, primary to quaternary ammonium salts, alkali metal salts, alkaline earth metal salts and polyvalent metal salts of phosphorous acid and phosphite ester are given to the cereals.
摘要:
When a vehicle electric power source is turned on, and when a target mode position is other than a P-mode position and a D-mode position or the target mode position is unfixed, an SBW-ECU does not drive the actuator so that the current actual mode position is maintained. The SBW-ECU accepts only the driver's requirement for changing the mode position to the P-mode position or the D-mode position. When it is required to change the mode position to the P-mode position, a first position learning portion learns a first reference position. When it is required to change the mode position to the D-mode position, a second position learning portion learns a second reference position.
摘要:
In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.
摘要:
According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the second conductivity type, and a third semiconductor region of the first conductivity type. The semiconductor pillars of the first and second conductivity type are and arranged alternately on the first semiconductor region. The second semiconductor region is provided on the semiconductor pillar of the second conductivity type. The third semiconductor region is provided on the second semiconductor region. A semiconductor pillar other than a semiconductor pillar most proximal to the terminal region is provided in a stripe configuration. The semiconductor pillar most proximal to the terminal region includes regions having a high and a low impurity concentration. The regions are provided alternately.
摘要:
A rod-lock mechanism is provided in an automatic transmission for a vehicle. The rod-lock mechanism has an engaging pin which will be engaged with a rod when the rod is in its initial position, so as to hold the rod in its initial position. The rod-lock mechanism further has an electric actuator for driving the engaging pin when electric power is supplied, so that the engaging pin is brought out of engagement from the rod. A forced parking current supply unit controls electric power supply to the electric actuator. When the electric power is supplied to the electric actuator, the rod is moved in a direction of a parking position to bring a vehicle into a parking condition.
摘要:
A plurality of concavities and convexities is provided on tips of all rotor teeth 24 of the SR motor 5. Depths of the concave portions α are deep on an edge side where a stator tooth 23 and rotor tooth 24 first approach and are shallow as a facing area between the stator tooth 23 and rotor tooth 24 increases. Therefore, magnetic resistance between the stator tooth 23 and rotor tooth 24 becomes high at an early stage of the stator tooth 23 and rotor tooth 24 facing each other and becomes low as the facing area between the stator tooth 23 and rotor tooth 24 increases. As a result, torque fluctuation can be suppressed at a time of a large current and a minimum generation torque can be increased at a time of a small current.
摘要:
A shift range switching device is provided to a shift-by-wire system for an automatic transmission device. The shift range switching device includes a range switching unit for switching a shift range of the automatic transmission device between a P range and the other range. The shift range switching device further includes an actuator including an electric motor and a reduction device. The reduction device transmits driving force of the electric motor to the range switching unit for actuating the range switching unit as instructed. The reduction device has a variable reduction ratio. The reduction device transmits the driving force in switching of the shift range from the P range to the other range at a reduction ratio, which is greater than a reduction ratio in switching of the shift range from the other range to the P range.
摘要:
A shift range switching apparatus includes an automatic transmission that includes a shift range switching device having a control rod for switching an actual shift range corresponding to rotation angle of the control rod. The shift range switching apparatus further includes an electric actuator that includes an output shaft connecting with the control rod. The electric actuator switches the actual shift range by rotating the control rod via the output shaft. The shift range switching apparatus further includes an assembly regulating device that allows the electric actuator to be detachable from and attachable to the automatic transmission when the actual shift range of the shift range switching device is set at a specific shift range.