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公开(公告)号：US5146513A
公开(公告)日：1992-09-08
申请号：US684378
申请日：1991-04-12
Applicant: Hiroaki Inoue , Kazuhisa Uomi , Koji Ishida
Inventor： Hiroaki Inoue , Kazuhisa Uomi , Koji Ishida
CPC classification number: G02F1/3138 , H01S5/50 , H04Q11/0005 , H04Q2011/0015 , H04Q2011/0041 , H04Q2011/0052
Abstract: A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIB, etc. The device includes a light amplifying arrangement provided on a bypass wavelength that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN radio is markedly increased.
Abstract translation: 提供了可用于光逻辑电路，光子开关OEIB等的半导体光学器件和光学器件阵列。该器件包括在连接多个光波导的旁路波长上提供的光放大装置，从而能够改善 的光串扰和光传播损耗。 特别地，通过除了光偏转部分之外提供光放大装置，噪声分量不被放大，因此，SN无线电显着增加。
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公开(公告)号：US5033810A
公开(公告)日：1991-07-23
申请号：US368030
申请日：1989-06-19
Applicant: Hiroaki Inoue , Kensuke Ogawa , Koji Ishida
Inventor： Hiroaki Inoue , Kensuke Ogawa , Koji Ishida
CPC classification number: B82Y20/00 , G02F1/01708 , G02F1/3556 , G02F1/377
Abstract: An optical device has multilayer films formed by periodically laminating a number of layers each comprising at least two kinds of optical crystal thin films (f.sub.n, g.sub.n) having different refractive indices onto a substrate. The multilayer films include a semiconductor material having a large non-linear optical coefficient as a composing material and have artificial optical anisotropy. Since the multilayer films of the optical device have a large non-linear coefficient and optical anisotropy, a non-linear phenomenon such as second-harmonic generation or the like can be efficiently caused.
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Patent Agency Ranking
公开(公告)号：US4737015A
公开(公告)日：1988-04-12
申请号：US674770
申请日：1984-11-26
Applicant: Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
Inventor： Koji Ishida , Hiroyoshi Matsumura , Kenji Hiruma , Kazuyuki Nagatsuma , Akihito Hongo
Abstract: An optical waveguide comprising a layer formed on a substrate, having a mixed composition of silicon oxide and silicon nitride and having an arbitrary value of refractive index ranging between those of the silicon oxide and the silicon nitride. The layer of said mixed composition can be formed on the substrate to easily fabricate the optical waveguide of the present invention by conducting a sputtering method employing a Si target and controlling the composition of a sputtering gas composed of a mixture of N.sub.2 and O.sub.2 gases.
Abstract translation: 一种光波导，包括形成在基板上的层，其具有氧化硅和氮化硅的混合组成，并且具有范围在氧化硅和氮化硅的折射率之间的任意值。 所述混合组合物的层可以形成在基板上，以通过使用Si靶的溅射方法和控制由N 2和O 2气体的混合物组成的溅射气体的组成来容易地制造本发明的光波导。
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34.发明授权Optical switching device utilizing multiple quantum well structures between intersecting waveguides 失效在交叉波导之间利用多个量子阱结构的光学开关器件
公开(公告)号：US4737003A
公开(公告)日：1988-04-12
申请号：US684784
申请日：1984-12-21
Applicant: Hiroyoshi Matsumura , Naoki Chinone , Koji Ishida
Inventor： Hiroyoshi Matsumura , Naoki Chinone , Koji Ishida
CPC classification number: G02F1/315 , G02F1/3138
Abstract: An optical switch wherein a stripe layer of a compound semiconductor whose refractive index is changed by changing a carrier concentration thereof is disposed so as to cut off both optical waveguides at a position of a longer diagonal line of an intersection portion between the optical waveguides formed on a substrate of a compound semiconductor and intersecting each other at a predetermined angle, and the refractive index is changed by causing current to flow to the stripe layer.
Abstract translation: 一种光学开关，其中折射率通过改变载流子浓度而改变的化合物半导体的条纹层被设置成在形成在其上的光波导之间的交叉部分的较长对角线的位置处切断两个光波导 化合物半导体的基板，以预定的角度彼此交叉，并且通过使电流流向条纹层来改变折射率。
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公开(公告)号：US4695122A
公开(公告)日：1987-09-22
申请号：US696478
申请日：1985-01-30
Applicant: Koji Ishida , Hiroyoshi Matumura
Inventor： Koji Ishida , Hiroyoshi Matumura
CPC classification number: G02B6/122
Abstract: An optical waveguide obtained by forming on a substrate an amorphous silicon film which contains a predetermined quantity of at least one of the elements of hydrogen, nitrogen and oxygen so that the amorphous silicon film has a predetermined value of refractive index. The optical waveguide can be made easily by carrying out a sputtering operation, in which Si is used as a target with a mixed gas of argon and at least one of hydrogen, nitrogen and oxygen, or a mixed gas of hydrogen and at least one of nitrogen and oxygen used as a sputtering gas, the composition of the sputtering gas being controlled in a predetermined manner during the sputtering operation.
Abstract translation: 一种光波导，其通过在基板上形成包含预定量的至少一种氢，氮和氧元素的非晶硅膜，以使非晶硅膜具有预定的折射率值而获得。 通过进行溅射操作，可以容易地制造光波导，其中使用Si作为目标物，其中氩气和氢气，氮气和氧气中的至少一种的混合气体，或者氢气和氮气与氧气的混合气体中的至少一种 用作溅射气体的氮和氧，在溅射操作期间以预定方式控制溅射气体的组成。
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公开(公告)号：US4203743A
公开(公告)日：1980-05-20
申请号：US933672
申请日：1978-08-14
Applicant: Tsuneo Suganuma , Koji Ishida , Shin Satoh , Mamoru Sugie , Toshio Katsuyama , Gyozo Toda
Inventor： Tsuneo Suganuma , Koji Ishida , Shin Satoh , Mamoru Sugie , Toshio Katsuyama , Gyozo Toda
IPC: C03B37/018 , G02B6/02 , G02B6/028 , C03B37/02
CPC classification number: G02B6/03627 , C03B37/018 , C03B37/01861 , G02B6/02 , C03B2203/26 , G02B6/0281 , G02B6/03611 , Y10S65/16
Abstract: A method of producing an optical fiber comprising (i) the step of depositing a glass film of desired refractive index onto the inner wall surface of a quartz tube by the CVD (chemical vapor deposition) process, (ii) the step of heating the quartz tube to a high temperature while the gas of a compound which forms an oxide, enhancing the refractive index of the glass film, in an oxidizing atmosphere at the high temperature is kept flowing into the quartz tube along with an oxidizing gas, (iii) the step of heating and collapsing the quartz tube into a solid rod or the so-called preform, and (iv) the step of heating and drawing the optical fiber preform into the optical fiber.In the optical fiber produced by this method of manufacture, the lowering of the refractive index of the central part of the optical fiber is sharply reduced.At the step (iii), one end of the quartz tube is sealed and a gas is introduced into the tube from the other end so as to slightly raise the internal pressure of the tube, whereby a more favorable result is obtained.
Abstract translation: 一种制造光纤的方法，包括（i）通过CVD（化学气相沉积）工艺在石英管的内壁表面上沉积所需折射率的玻璃膜的步骤，（ii）加热石英的步骤 在高温下在氧化气氛中形成氧化物的化合物的气体（在玻璃膜的氧化气氛中）的气体与氧化气体一起流入石英管中，（iii） 将石英管加热和塌缩成实心棒或所谓的预制件的步骤，以及（iv）将光纤预制件加热和拉制成光纤的步骤。 在通过该制造方法制造的光纤中，光纤的中心部分的折射率的降低急剧降低。 在步骤（iii）中，密封石英管的一端，从另一端引入气体，从而稍微升高管的内压，得到更好的结果。
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37.发明授权
公开(公告)号：US3973247A
公开(公告)日：1976-08-03
申请号：US459123
申请日：1974-04-08
Applicant: Akio Kumada , Koji Ishida
Inventor： Akio Kumada , Koji Ishida
IPC: G11C11/42 , C04B35/46 , C04B35/48 , C04B35/50 , C04B35/51 , G02F1/055 , G09F9/30 , G09G3/16 , G11C11/22 , G11C13/04 , H01G7/02
CPC classification number: H01G7/026 , C04B35/46 , C04B35/48 , C04B35/50 , C04B35/51 , G02F1/055 , G11C11/22 , G11C13/047
Abstract: An information is written or erased in such way that, while a memory employing electrooptic ceramics wherein a ferroelectric phase and an anti-ferroelectric phase (or paraelectric phase) coexist having a morphotropic phase boundary is being heated to a temperature at which the polymorphic base boundary of the ceramic material occurs, an electric field opposite in polarity to the spontaneous polarization of the memory is applied to the material.According to the writing or erasing method, the writing of the information into the memory employing the material or the erasure of the information can be perfectly performed.
Abstract translation: 以这样的方式写入或擦除信息，即，使用电光学陶瓷的存储器，其中铁电相和反铁电相（或顺电相）共存具有正电相界面的存储器被加热到多晶基底边界 发生与材料的自发极化极性相反的电场。
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