公开(公告)号：US08529896B2

公开(公告)日：2013-09-10

申请号：US12738285

申请日：2008-10-16

Applicant: Yumiko Kamogawa ,  Sahori Namiki ,  Minkwon Cho ,  Koji Ishida

Inventor： Yumiko Kamogawa ,  Sahori Namiki ,  Minkwon Cho ,  Koji Ishida

IPC: A61K39/395

CPC classification number: C07K16/30 ,  C07K16/2896 ,  C07K2317/24 ,  C07K2317/34 ,  C07K2317/56 ,  C07K2317/732 ,  C07K2317/734 ,  G01N33/57484

Abstract: BST2 antibodies were selected by using as an indicator the binding between BST2 antibodies and various splicing variants of human BST2 antigen. As a result, the present inventors successfully obtained BST2 antibodies that specifically recognize BST2D, which has been reported to be expressed at high levels in cancer cells. The antibodies of the present invention specifically bind to cells expressing BST2D. Non-specific antibody binding to non-target tissues, which results in the decrease of antibody concentration in blood, can be prevented by using the antibodies of the present invention therapeutically. Alternatively, the present invention provides diagnostic agents comprising an antibody of the present invention, which specifically detect tissues expressing BST2D.

Abstract translation: 通过使用BST2抗体与人BST2抗原的各种剪接变体之间的结合作为指标来选择BST2抗体。 结果，本发明人成功地获得了特异性识别BST2D的BST2抗体，BST2D据报道在癌细胞中以高水平表达。 本发明的抗体特异性结合表达BST2D的细胞。 可以通过使用本发明的抗体治疗性地防止结合非靶组织的非特异性抗体，其导致血液中抗体浓度的降低。 或者，本发明提供了包含特异性检测表达BST2D的组织的本发明的抗体的诊断剂。

公开(公告)号：US08470992B2

公开(公告)日：2013-06-25

申请号：US13302291

申请日：2011-11-22

Applicant: Yumiko Kamogawa ,  Minkwon Cho ,  Naoko Arai ,  Koji Ishida

Inventor： Yumiko Kamogawa ,  Minkwon Cho ,  Naoko Arai ,  Koji Ishida

IPC: C07H21/04

CPC classification number: C07K16/2803 ,  A61K2039/505 ,  A61K2039/545 ,  C07K16/28 ,  C07K2317/24 ,  C07K2317/34 ,  C07K2317/56 ,  C07K2317/734 ,  C07K2317/77 ,  C12N5/00 ,  C12N2510/02 ,  G01N33/566 ,  G01N33/56972 ,  G01N33/577 ,  G01N33/6866 ,  G01N2333/555 ,  G01N2333/705

Abstract: An antibody binding to IPC was obtained by using an animal cell in which a cell membrane protein associatable with ILT7 was co-expressed as an immunogen. The antibody of the invention has a high specificity which allows immunological distinction between other ILT family molecules and ILT7. The anti-ILT7 antibody of the invention bound to IPC and inhibited the activity thereof. With the anti-ILT7 antibody of the invention, the IPC activity can be inhibited and an interferon-related disease can be treated or prevented. ILT7 expression is maintained even in IPC in the presence of IFNα. Therefore, an inhibitory action of IPC activity by the anti-ILT7 antibody can be expected even in an autoimmune disease patient with an increased production of IFNα.

Abstract translation: 通过使用与ILT7相关的细胞膜蛋白共表达作为免疫原的动物细胞获得与IPC结合的抗体。 本发明的抗体具有高特异性，其允许其他ILT家族分子和ILT7之间的免疫学区别。 本发明的抗ILT7抗体结合IPC并抑制其活性。 利用本发明的抗ILT7抗体，可以抑制IPC活性并且可以治疗或预防干扰素相关疾病。 在IFNα存在下，甚至在IPC中仍维持ILT7表达。 因此，即使在具有增加的IFNα生成量的自身免疫性疾病患者中也可以预期抗ILT7抗体的IPC活性的抑制作用。

公开(公告)号：US5422967A

公开(公告)日：1995-06-06

申请号：US102805

申请日：1993-08-06

Applicant: Hiroaki Inoue ,  Hirohisa Sano ,  Toshio Kirihara ,  Shinji Nishimura ,  Mari Ogawa ,  Koji Ishida

Inventor： Hiroaki Inoue ,  Hirohisa Sano ,  Toshio Kirihara ,  Shinji Nishimura ,  Mari Ogawa ,  Koji Ishida

IPC: G02F1/313 ,  H04Q11/00 ,  G02B6/10

CPC classification number: H04Q11/0005 ,  G02F1/3138 ,  H04Q2011/0015 ,  H04Q2011/0041 ,  H04Q2011/0052

Abstract: There is provided a self-routing optical switch array formed by connecting m stages of optical switches and set so as to satisfy the relation:.lambda..sub.a1

Abstract translation: 提供了一种通过连接m级光开关而形成的自路由光开关阵列，其设置为满足以下关系：λa1 <λ1λ2λ2。 的。 的。 <λ< 的。 的。 λλ是λ开关阵列的第n级的开关区域的吸收边缘的波长; λa是与位于第n级的光开关中使用的信息信号光复用的目的地信号光的波长，λs是信息信号光的波长。

公开(公告)号：US5247592A

公开(公告)日：1993-09-21

申请号：US892782

申请日：1992-06-03

Applicant: Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

Inventor： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

IPC: G02F1/313 ,  H01S5/50 ,  H04Q11/00

CPC classification number: G02F1/3138 ,  H01S5/50 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0041 ,  H04Q2011/0052

Abstract: A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIC, etc. The device includes a light amplifying arrangement provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN ratio is markedly increased.

Abstract translation: 提供了可用于光逻辑电路，光子开关OEIC等的半导体光学器件和光学器件阵列。该器件包括设置在连接多个光波导的旁路波导上的光放大装置，从而能够改善 的光串扰和光传播损耗。 特别地，除了光偏转部分之外还提供光放大装置，噪声分量不被放大，因此，SN比显着增加。

公开(公告)号：US5044745A

公开(公告)日：1991-09-03

申请号：US464192

申请日：1990-01-12

Applicant: Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

Inventor： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

IPC: G02F1/313 ,  G02F1/35 ,  H01S5/50 ,  H04Q11/00

CPC classification number: G02F1/3138 ,  H01S5/50 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0041 ,  H04Q2011/0052

Abstract: A semiconductor optical device and an optical device array is provided which can be used in an optical logic circuit, photonic switching OEIC, etc. The device includes a light amplifying arrangement provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, by virtue of providing a light amplifying means in addition to the light deflecting portion, noise components are not amplified, and, therefore, the SN ratio is markedly increased.

公开(公告)号：US4983540A

公开(公告)日：1991-01-08

申请号：US273012

申请日：1988-11-18

Applicant: Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

Inventor： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

IPC: H01L21/20 ,  G01Q30/16 ,  G01Q60/44 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L21/205 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/15 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01J37/3056 ,  B82Y10/00 ,  H01J37/08 ,  H01L21/2633 ,  H01L21/26546 ,  H01L21/8221 ,  H01L21/8252 ,  H01L29/151 ,  Y10S148/046 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/16 ,  Y10S438/962

Abstract: An ion beam (113) focused into a diameter of at most 0.1 .mu.m bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.

公开(公告)号：US4784451A

公开(公告)日：1988-11-15

申请号：US762328

申请日：1985-08-05

Applicant: Hitoshi Nakamura ,  Tadashi Fukuzawa ,  Koji Ishida ,  Hiroyoshi Matumura ,  Kenji Hiruma ,  Hiroaki Inoue

Inventor： Hitoshi Nakamura ,  Tadashi Fukuzawa ,  Koji Ishida ,  Hiroyoshi Matumura ,  Kenji Hiruma ,  Hiroaki Inoue

IPC: G02F1/313 ,  G02F1/315 ,  G02F1/015

CPC classification number: G02F1/3133 ,  G02F1/3138 ,  G02F1/315

Abstract: The present invention provides a waveguide type optical switch which has a high extinction ratio and can be driven efficiently at a low voltage or a low current injection. Where the waveguide type optical switch is used as a reflection type optical switch, the switch section is of current confinement structure, and where it is used as a directional coupler type optical switch, the pn junction is formed in the position where the optical electric field takes the maximum value for the fundamental mode of the light propagating in the waveguide.

Abstract translation: 本发明提供一种具有高消光比且可在低电压或低电流注入下有效驱动的波导型光开关。 在波导型光开关用作反射型光开关的情况下，开关部分为电流限制结构，在用作定向耦合器型光开关的情况下，pn结形成在光电场 获取在波导中传播的光的基本模式的最大值。

公开(公告)号：US20110259270A1

公开(公告)日：2011-10-27

申请号：US13090261

申请日：2011-04-20

Applicant: Seiji MINOURA ,  Jun Ohashi ,  Toshiki Ito ,  Koji Ishida ,  Fumihito Ogawa

Inventor： Seiji MINOURA ,  Jun Ohashi ,  Toshiki Ito ,  Koji Ishida ,  Fumihito Ogawa

IPC: C30B25/12 ,  B32B38/06

CPC classification number: C04B41/009 ,  C04B37/005 ,  C04B37/008 ,  C04B41/5057 ,  C04B41/5059 ,  C04B41/5062 ,  C04B41/5064 ,  C04B41/87 ,  C04B2235/72 ,  C04B2237/08 ,  C04B2237/083 ,  C04B2237/086 ,  C04B2237/363 ,  C04B2237/64 ,  C04B2237/72 ,  C04B2237/86 ,  C23C14/505 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4588 ,  C30B25/12 ,  C30B35/00 ,  Y10T156/1039 ,  C04B41/4531 ,  C04B41/4572 ,  C04B35/52

Abstract: A carbon component having a hole therein and an outer surface covered with a ceramic coating, and a method for manufacturing the carbon component are provided. The carbon component includes two carbon plate members joined together. The hole is defined by a groove formed on a mating surface of at least one of the carbon plate members and a mating portion of the other of the carbon plate members, which opposes the groove. An inner surface of the hole including a surface of the groove is entirely covered with a ceramic coating.

Abstract translation: 提供了其中具有孔的碳成分和被陶瓷涂层覆盖的外表面，以及制造碳成分的方法。 碳组分包括连接在一起的两个碳板构件。 孔由形成在碳板构件中的至少一个的配合表面上的槽和与槽相对的另一个碳板构件的配合部分限定。 包括凹槽表面的孔的内表面完全被陶瓷涂层覆盖。

公开(公告)号：US5324959A

公开(公告)日：1994-06-28

申请号：US883933

申请日：1992-05-14

Applicant: Hitoshi Nakamura ,  Shoichi Hanatani ,  Chiaki Notsu ,  Tsukuru Ohtoshi ,  Koji Ishida

Inventor： Hitoshi Nakamura ,  Shoichi Hanatani ,  Chiaki Notsu ,  Tsukuru Ohtoshi ,  Koji Ishida

IPC: H01L31/107 ,  H01L31/0352 ,  H01L29/205 ,  H01L31/06

CPC classification number: B82Y20/00 ,  H01L31/035236

Abstract: A semiconductor device includes a region in which carriers are transferred in the lamination direction of a multiple quantum well, such as a multiple quantum well multiplication layer of a superlattice APD. A superlattice structure with a varying well width is introduced to a hetero-interface present in the transfer region, thereby preventing pile-up of the carriers.

Abstract translation: 半导体器件包括其中载流子在多量子阱的层叠方向上传输的区域，例如超晶格APD的多量子阱乘法层。 将具有不同孔宽度的超晶格结构引入存在于转移区域中的异质界面，从而防止载体堆积。

公开(公告)号：US4693543A

公开(公告)日：1987-09-15

申请号：US711507

申请日：1985-03-07

Applicant: Hiroyoshi Matsumura ,  Koji Ishida

Inventor： Hiroyoshi Matsumura ,  Koji Ishida

IPC: G02B6/12 ,  G02B6/122 ,  G02F1/01 ,  G02F1/025 ,  G02F1/03 ,  G02F1/035 ,  G02F1/313

CPC classification number: G02F1/011 ,  G02B6/122

Abstract: The present invention relates to an improvement in the optical transmission characteristics of a ridged type of optical waveguide in an optical integrated circuit. The invention is directed to reducing the effects of irregularities in the ridge sides on the optical transmission losses of the optical waveguide. According to the present invention, therefore, a hardened film of a heat-resistant, high-molecular resin is applied over the ridges and the optical waveguide, greatly reducing the optical transmission losses in the optical waveguide. An appropriate thickness of the heat-resistant, high-molecular resin film is between 200 to 1,000 nm, in consideration of the electric and magnetic fields applied thereto for the operation of the circuit. The present invention makes it possible to provide an optical integrated circuit with an optical waveguide which has low optical transmission losses.

Abstract translation: PCT No.PCT / JP84 / 00311 Sec。 371日期：1985年3月7日 102（e）1985年3月7日PCT申请日1984年6月15日PCT公布。 公开号WO85 / 00431 日本1985年1月31日。本发明涉及光集成电路中脊形光波导的光传输特性的改进。 本发明旨在减少脊侧上的不规则性对光波导的光传输损耗的影响。 因此，根据本发明，在脊和光波导上施加耐热高分子树脂的硬化膜，大大降低了光波导中的光传输损耗。 考虑到施加到其上的用于操作电路的电场和磁场，耐热高分子树脂膜的适当厚度在200至1000nm之间。 本发明使得可以提供具有低光传输损耗的光波导的光集成电路。