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    Display substrate, a method of manufacturing the display substrate and a display apparatus having the display substrate
    31.
    发明授权
    Display substrate, a method of manufacturing the display substrate and a display apparatus having the display substrate 有权
    显示基板，显示基板的制造方法以及具有显示基板的显示装置

    公开(公告)号：US08139176B2

    公开(公告)日：2012-03-20

    申请号：US12098176

    申请日：2008-04-04

    Applicant: Kyung-Jin Lee ,  Kyung-Wook Kim ,  Hyuk-Jin Kim

    Inventor： Kyung-Jin Lee ,  Kyung-Wook Kim ,  Hyuk-Jin Kim

    IPC: G02F1/136

    CPC classification number: G02F1/136209 ,  G02F2001/136236

    Abstract: A display substrate includes a gate line, a data line, a thin film transistor, a pixel electrode, and a light blocking layer. The data line is insulated from the gate line and crosses the gate line. The thin film transistor is connected to the gate line and the data line. The thin film transistor is formed in a pixel. The pixel electrode is formed in the pixel and connected to the thin film transistor. The light blocking layer is formed from a same layer as the data line, wherein the light blocking layer is adjacent to a side of the data line.

    Abstract translation: 显示基板包括栅极线，数据线，薄膜晶体管，像素电极和遮光层。 数据线与栅极线绝缘，并与栅极线交叉。 薄膜晶体管连接到栅极线和数据线。 薄膜晶体管形成在像素中。 像素电极形成在像素中并连接到薄膜晶体管。 遮光层由与数据线相同的层形成，其中遮光层与数据线的一侧相邻。

    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS HAVING DIFFERENT PRODUCTS OF SATURATED MAGNETIZATION AND THICKNESS AND RELATED METHODS
    33.
    发明申请
    MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS HAVING DIFFERENT PRODUCTS OF SATURATED MAGNETIZATION AND THICKNESS AND RELATED METHODS 有权
    包括具有饱和磁化和厚度的不同产品的磁性层的磁性记忆装置及相关方法

    公开(公告)号：US20100277976A1

    公开(公告)日：2010-11-04

    申请号：US12769287

    申请日：2010-04-28

    Applicant: Sechung Oh ,  Kyung Jin Lee ,  Jangeun Lee ,  Hong Ju Suh

    Inventor： Sechung Oh ,  Kyung Jin Lee ,  Jangeun Lee ,  Hong Ju Suh

    IPC: G11C11/14 ,  H01L29/82

    CPC classification number: G11C11/161

    Abstract: A magnetic memory device may include a tunnel barrier, a reference layer on a first side of the tunnel barrier, and a free layer on a second side of the tunnel barrier so that the tunnel barrier is between the reference and free layers. The free layer may include a first magnetic layer adjacent the tunnel barrier, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer. More particularly, the nonmagnetic layer may be between the first and second magnetic layers, and the first magnetic layer may be between the tunnel barrier and the second magnetic layer. A product of a saturated magnetization of the first magnetic layer and a thickness of the first magnetic layer may be less than a product of a saturated magnetization of the second magnetic layer and a thickness of the second magnetic layer. Related methods are also discussed.

    Abstract translation: 磁存储器件可以包括隧道势垒，隧道势垒的第一侧上的参考层和隧道势垒的第二侧上的自由层，使得隧道势垒在参考层和自由层之间。 自由层可以包括邻近隧道势垒的第一磁性层，第一磁性层上的非磁性层和非磁性层上的第二磁性层。 更具体地，非磁性层可以在第一和第二磁性层之间，并且第一磁性层可以在隧道势垒和第二磁性层之间。 第一磁性层的饱和磁化强度和第一磁性层的厚度的乘积可以小于第二磁性层的饱和磁化强度与第二磁性层的厚度的乘积。 还讨论了相关方法。

    Method of manufacturing a semiconductor device using a cleaning composition
    35.
    发明申请
    Method of manufacturing a semiconductor device using a cleaning composition 审中-公开
    使用清洁组合物制造半导体器件的方法

    公开(公告)号：US20060014391A1

    公开(公告)日：2006-01-19

    申请号：US11176276

    申请日：2005-07-08

    Applicant: Kyung-Jin Lee ,  Seung-Hyun Ahn ,  Baik-Soon Choi ,  Kui-Jong Baek ,  Woong Hahn

    Inventor： Kyung-Jin Lee ,  Seung-Hyun Ahn ,  Baik-Soon Choi ,  Kui-Jong Baek ,  Woong Hahn

    IPC: H01L21/465

    CPC classification number: H01L21/02071 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23G1/106 ,  C23G1/125

    Abstract: A metal-containing pattern structure is formed on a semiconductor substrate, and a cleaning composition is applied to the semiconductor substrate. The cleaning composition includes, based on a total weight of the cleaning composition, about 78 wt % to about 99.98 wt % of an acidic aqueous solution, about 0.01 wt % to about 11 wt % of a first chelating agent, and about 0.01 wt % to about 11 wt % of a second chelating agent. The metal-containing pattern structure includes an exposed first surface portion and a second surface portion covered with a polymer. Application of the cleaning solution forms a first corrosion-inhibition layer on the first surface portion of the metal-containing pattern structure, and removes the polymer from the second surface portion of the metal-containing pattern structure.

    Abstract translation: 在半导体衬底上形成含有金属的图案结构，并将清洗组合物涂敷在半导体衬底上。 清洁组合物基于清洁组合物的总重量包含约78重量％至约99.98重量％的酸性水溶液，约0.01重量％至约11重量％的第一螯合剂和约0.01重量％ 至约11重量％的第二螯合剂。 含金属的图案结构包括暴露的第一表面部分和被聚合物覆盖的第二表面部分。 清洁溶液的应用在含金属图案结构的第一表面部分上形成第一防腐蚀层，并从含金属图案结构的第二表面部分除去聚合物。

    Existing strain measuring apparatus for analyzing stability of steel structure and method thereof
    36.
    发明授权
    Existing strain measuring apparatus for analyzing stability of steel structure and method thereof 失效
    用于分析钢结构稳定性的现有应变测量装置及其方法

    公开(公告)号：US6016708A

    公开(公告)日：2000-01-25

    申请号：US90347

    申请日：1998-06-04

    Applicant: Woo-Bum Kim ,  Dong-Su Park ,  Kyung-Jin Lee ,  Hwan-Seon Nah

    Inventor： Woo-Bum Kim ,  Dong-Su Park ,  Kyung-Jin Lee ,  Hwan-Seon Nah

    IPC: G01L1/22 ,  G01M5/00

    CPC classification number: G01M5/0041 ,  G01M5/0083

    Abstract: An strain measuring apparatus for analyzing the stability of a steel structure and a method thereof employs a controller for receiving a variation difference amount from the strain gauge input unit measured using a strain gauge between a strain degree obtained by applying a weight to a steel structure and a strain degree obtained by applying a weight to a steel structure having a hole formed at a predetermined portion and measuring a strain existing in the steel structure based on the variation amount using particular equations. A control command input unit inputs an initialization command for initialing the existing strain measuring apparatus, a radius of the hole formed in the steel structure, a distance between the center of the hole and the center of the strain gauge attached to the steel structurc and an external operating signal including a proceeding command which represents a testing procedure into the controller. A display unit displays the operating procedure of the controller and the existing strain measured, whereby it is possible to measure an existing strain of the steel member at a construction site in which a steel member is provided.

    Abstract translation: 用于分析钢结构的稳定性的应变测量装置及其方法采用控制器，用于接收与使用应变仪测量的应变仪输入单元的变化差值，所述应变仪在通过将重量施加到钢结构获得的应变程度和 通过在具有在预定部分形成的孔的钢结构上施加重量并且使用特定方程式基于变化量来测量存在于钢结构中的应变而获得的应变度。 控制命令输入单元输入用于初始化现有应变测量装置的初始化命令，钢结构中形成的孔的半径，孔的中心与附接到钢结构体之间的应变片的中心之间的距离，以及 外部操作信号包括表示到控制器的测试程序的进行命令。 显示单元显示控制器的操作过程和所测量的现有应变，由此可以在设置钢构件的施工现场测量钢构件的现有应变。

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