公开(公告)号：US20250004364A1

公开(公告)日：2025-01-02

申请号：US18883315

申请日：2024-09-12

Applicant: NGK INSULATORS, LTD.

Inventor： Toshikatsu KASHIWAYA ,  Naoki GOURIKI

IPC: G03F1/64

Abstract: Provided is a method for producing a high-quality EUV-transmissive film including: providing a substrate having a first surface and a second surface; covering, with a mask layer, the entire region of the first surface and a peripheral region other than a cavity region positioned in the center of the second surface; partially etching away the substrate exposed to the cavity region to form a cavity; etching away the mask layer covering the first surface; forming an EUV-transmissive film on the surface of the substrate on the cavity side and on the surface of the mask layer covering the second surface; and etching away the substrate from the first surface until the EUV-transmissive film is exposed to an opposite side from the cavity to form the EUV-transmissive film in the cavity region into a self-supporting film.

公开(公告)号：US12183792B2

公开(公告)日：2024-12-31

申请号：US17445617

申请日：2021-08-23

Applicant: NGK INSULATORS, LTD.

Inventor： Kiyoshi Matsushima ,  Jun Yoshikawa ,  Morimichi Watanabe ,  Risa Miyakaze

IPC: H01L29/16 ,  C30B29/36 ,  H01L21/02

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

公开(公告)号：US20240428900A1

公开(公告)日：2024-12-26

申请号：US18823832

申请日：2024-09-04

Applicant: NGK INSULATORS, LTD.

Inventor： Takafumi KIMATA ,  Takahiro TOMITA ,  Kyohei ATSUJI ,  Kenji MORIMOTO ,  Shingo SOKAWA ,  Taisuke KATO ,  Takafumi NISHIWAKI ,  Atsunori INAGAKI

IPC: G16C60/00 ,  G16C20/70

Abstract: A system performs either inference using a first model or inference using a second model and a third model according to accuracy of at least one model of the first to third models and, upon the inference, generates or updates recipe properties data that is data indicating an association between a manufacturing method recipe for a material and a material property/properties. The first model is a model to which a manufacturing method recipe dataset indicating a manufacturing method recipe is input and from which a material properties dataset indicating a material property/properties is output. The second model is a model to which a material characteristics dataset indicating a material characteristic(s) is input and from which a material properties dataset is output. The third model is a model to which a manufacturing method recipe dataset is input and from which a material characteristics dataset is output.

公开(公告)号：US20240413770A1

公开(公告)日：2024-12-12

申请号：US18432156

申请日：2024-02-05

Applicant: NGK INSULATORS, LTD.

Inventor： Daichi KUBOTA

IPC: H02N13/00 ,  H05B6/10

Abstract: An electrostatic chuck fixing a workpiece disposed on a mounting surface via electrostatic attraction with application of a voltage to an electrode buried inside the electrostatic chuck comprises: the mounting surface having an uneven structure including a plurality of protrusions two-dimensionally spaced apart with predetermined pitches and a depression that is flat between the protrusions, each of the protrusions includes: a flat portion having a flat surface being vertical in a thickness direction of the electrostatic chuck and having a uniform height; and a sloped portion around the flat portion having a height decreasing from the flat portion toward the depression, and the sloped portion has an upper surface with a slope angle of 65 degrees or higher and 84 degrees or lower in the thickness direction of the electrostatic chuck.

公开(公告)号：US12165948B2

公开(公告)日：2024-12-10

申请号：US17547379

申请日：2021-12-10

Applicant: NGK INSULATORS, LTD.

Inventor： Takashi Ebigase

IPC: H01L23/373 ,  H01L21/48

Abstract: A bonded substrate includes: a silicon nitride ceramic substrate; a copper plate; and a bonding layer bonding the copper plate to the silicon nitride ceramic substrate, wherein the bonding layer has a first interface in contact with the silicon nitride ceramic substrate and a second interface in contact with the copper plate, and contains a nitride and a silicide of an active metal as at least one metal selected from the group consisting of titanium and zirconium, an atomic fraction of nitrogen of the bonding layer is greatest at the first interface and is smallest at the second interface, and a sum of atomic fractions of the active metal and silicon of the bonding layer is smallest at the first interface and is greatest at the second interface.

公开(公告)号：US12163252B2

公开(公告)日：2024-12-10

申请号：US17650672

申请日：2022-02-11

Applicant: NGK INSULATORS, LTD.

Inventor： Jun Yoshikawa ,  Miho Maeda

IPC: C30B7/10 ,  C30B29/16

Abstract: An α- or β-Ga2O3 crystal is produced by bringing an aqueous solution including a Ga ion into a supercritical state having a temperature of 400° C. or more and a pressure of 22.1 MPa or more.

公开(公告)号：US20240401236A1

公开(公告)日：2024-12-05

申请号：US18798950

申请日：2024-08-09

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroharu KOBAYASHI ,  Hirohisa OGAWA ,  Morimichi WATANABE

IPC: C30B29/40

Abstract: There is provided an AlN single-crystal substrate containing a carbon atom and a rare earth atom as impurities, and satisfies a relation: 0.0010

公开(公告)号：US12153012B2

公开(公告)日：2024-11-26

申请号：US17370175

申请日：2021-07-08

Applicant: NGK INSULATORS, LTD.

Inventor： Megumi Fujisaki ,  Mika Takeuchi ,  Takahiro Tomita

IPC: G01N27/407 ,  G01N27/409 ,  G01N27/416

Abstract: A gas sensor has a porous protective layer disposed on a surface of a sensor element. In this gas sensor, the porous protective layer includes ceramic particles and ceramic fibers. Further, the ceramic fibers are present in the porous protective layer over a range from a front surface to a back surface thereof.

公开(公告)号：US12151216B2

公开(公告)日：2024-11-26

申请号：US17305184

申请日：2021-07-01

Applicant: NGK INSULATORS, LTD.

Inventor： Makiko Ichikawa ,  Kenji Yajima ,  Makoto Miyahara ,  Naoto Kinoshita

IPC: B01D71/02 ,  B01D53/22 ,  B01D67/00 ,  B01D69/02 ,  B01D69/10 ,  B01D69/12

Abstract: A zeolite membrane composite includes a porous support and a zeolite membrane formed on the support. The zeolite membrane includes a low-density layer that covers the support, and a compact layer that covers the low-density layer. The compact layer has a higher content of a zeolite crystalline phase than the low-density layer. By in this way forming the compact layer on the low-density layer that covers the support, the thin compact layer with no defects can be formed more easily than in the case where a compact layer is formed directly on a support.

公开(公告)号：US20240384435A1

公开(公告)日：2024-11-21

申请号：US18786978

申请日：2024-07-29

Applicant: NGK INSULATORS, LTD.

Inventor： Hirohisa OGAWA ,  Morimichi WATANABE ,  Hiroharu KOBAYASHI

IPC: C30B29/40

Abstract: There is provided an AlN single-crystal substrate of a circular shape with a radius r, wherein when the AlN single-crystal substrate is sectioned into three regions, the three regions being a central section, which is a region radially extending from a center of the AlN single-crystal substrate to 0.4r, a middle section, which is a region excluding the central section from a region radially extending from the center of the AlN single-crystal substrate to 0.7r, and an outer circumferential section, which is a region excluding the central section and the middle section from an entire region of the AlN single-crystal substrate, a dislocation density Dc of the central section, a dislocation density Dm of the middle section, and a dislocation density Dp of the outer circumferential section satisfy the relationship Dm>Dp>Dc.