Method for the higher-order blind identification of mixtures of sources
    31.
    发明授权
    Method for the higher-order blind identification of mixtures of sources 失效
    高级盲目识别混合源的方法

    公开(公告)号:US07079988B2

    公开(公告)日:2006-07-18

    申请号:US10813673

    申请日:2004-03-31

    CPC classification number: G06K9/6243 G06F17/12 G06F17/16 G06F17/18

    Abstract: A method for the blind identification of sources within a system having P sources and N receivers comprises at least one step for the identification of the matrix of the direction vectors of the sources from the information proper to the direction vectors ap of the sources contained redundantly in the m=2q order circular statistics of the vector of the observations received by the N receivers. Application to a communications network.

    Abstract translation: 一种用于盲目识别具有P源和N个接收机的系统内的源的方法,包括至少一个步骤,用于根据适合于方向向量的信息识别源的方向向量的矩阵, SUB的源包含N个接收器接收的观测矢量的m = 2q次循环统计信息。 应用于通信网络。

    Heterojunction bipolar transistor
    33.
    发明申请
    Heterojunction bipolar transistor 审中-公开
    异质结双极晶体管

    公开(公告)号:US20050037587A1

    公开(公告)日:2005-02-17

    申请号:US10914482

    申请日:2004-08-09

    CPC classification number: H01L29/66287 H01L29/0817 H01L29/66242

    Abstract: A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconductor material of the first doping type.

    Abstract translation: 一种用于形成异质结双极晶体管的方法,包括以下步骤:在半导体衬底中形成第一掺杂类型的集电极区域; 通过在集电区域的一部分上方的外延生长形成基区的第二掺杂类型的硅/锗层; 在硅/锗层之上形成由相对于硅/锗层可选择性地蚀刻的材料以及相对于层和连续形成的绝缘间隔物形成的牺牲发射体; 在所述牺牲发射体的侧面上形成第一绝缘间隔物; 通过将硅/锗层的暴露部分上的硅层外延生长; 形成与所述第一间隔物相邻的第二绝缘间隔物并铺设在所述硅层上; 用绝缘层覆盖整个结构; 部分去除牺牲发射体上方的绝缘层并去除牺牲发射极; 用第一掺杂类型的半导体材料填充先前由牺牲发射极占据的空间。

    Multisensor reception method for a fixed base station of a
communications network exchanging data with mobile stations and device
for its implementation
    34.
    发明授权
    Multisensor reception method for a fixed base station of a communications network exchanging data with mobile stations and device for its implementation 失效
    用于与移动站交换数据的通信网络的固定基站的多传感器接收方法及其实现的装置

    公开(公告)号:US5752168A

    公开(公告)日:1998-05-12

    申请号:US620699

    申请日:1996-03-21

    CPC classification number: H04B7/0857

    Abstract: Disclosed is a method enabling the improvement of the multisensor reception of a system of radiocommunications exchanging signals between at least one fixed base station providing for multisensor reception by means of a network of sensors, and the processing of the signals. This method consists, in a transparent manner perceived from the base station, in computing a weighting vector W for the formation of channels at reception. The weighting vector W is estimated by an adaptive algorithm leading to a maximization of the signal-to-noise ratio. Application: mobile radiocommunications. FIG. 1

    Abstract translation: 公开了一种能够改善无线电通信系统的多传感器接收的方法,该无线电通信系统在通过传感器网络提供多传感器接收的至少一个固定基站和信号处理之间交换信号。 该方法以从基站感知的透明方式包括计算用于在接收时形成信道的加权矢量W. 通过自适应算法估计加权矢量W,导致信噪比的最大化。 应用:移动无线电通信。 图。

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