公开(公告)号：US20050271813A1

公开(公告)日：2005-12-08

申请号：US11127767

申请日：2005-05-12

Applicant: Shreyas Kher ,  Pravin Narwankar ,  Rahul Sharangapani

Inventor： Shreyas Kher ,  Pravin Narwankar ,  Rahul Sharangapani

IPC: C23C16/00 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/56 ,  F22B1/00

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.

Abstract translation: 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积电介质材料的方法。 在一个实例中，一种方法包括将衬底顺序地暴露于铪前体和氧化气体以在其上沉积氧化铪材料。 在另一个实例中，通过将衬底顺序地暴露于氧化气体和含有铪前体和硅前体的工艺气体来沉积硅酸铪材料。 氧化气体通常含有通过使氢源气体和氧源气体流过水蒸汽发生器而形成的水蒸气。 在另一个实例中，一种方法包括将衬底顺序地暴露于氧化气体和至少一种前体以沉积氧化铪，氧化锆，氧化镧，氧化钽，氧化钛，氧化铝，氧化硅，其铝酸盐，其硅酸盐，衍生物 或其组合。