公开(公告)号：US11595021B2

公开(公告)日：2023-02-28

申请号：US16493560

申请日：2018-03-09

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

Inventor： Thu Trang Vo ,  Jean-Sebastien Moulet ,  Alexandre Reinhardt ,  Isabelle Huyet ,  Alexis Drouin ,  Yann Sinquin

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25

Abstract: The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.

公开(公告)号：US20230011691A1

公开(公告)日：2023-01-12

申请号：US17757408

申请日：2020-11-27

Applicant: Soitec

Inventor： Laurent Viravaux ,  Sébastien Carton ,  Onintza Ros

IPC: H01L21/306 ,  H01L21/02

Abstract: A method for etching a main surface of a thin layer of a substrate, which comprises immersing the substrate n an etching bath so as to expose the main surface to an etching agent, the substrate being oriented relative to the bath such that: —when it is introduced into the bath, the main surface is gradually immersed from an initial introduction point (PII) to an end introduction point (PFI), at an introduction speed, and —when it exits the bath, the main surface gradually emerges from an initial exit point (PIS) to an end exit point (PFS), at an exit speed, the method being characterized in that: —the introduction speed is chosen in such a way as to etch the main surface according to a first non-uniform profile between the initial introduction point (PII) and the end introduction point (PFI), and/or —the exit speed is chosen in such a way as to etch the main surface according to a second non-uniform profile between the initial exit point (PIS) and the end exit point (PFS), in order to compensate for non-uniformities in the thickness of the thin layer.

公开(公告)号：US11552123B2

公开(公告)日：2023-01-10

申请号：US17133316

申请日：2020-12-23

Applicant: Soitec

Inventor： Walter Schwarzenbach

IPC: H01L27/146 ,  H01L21/762

Abstract: A front-side type image sensor may include a substrate successively including: a P− type doped semiconducting support substrate, an electrically insulating layer and a semiconducting active layer, and a matrix array of photodiodes in the active layer of the substrate. The substrate may include, between the support substrate and the electrically insulating layer, a P+ type doped semiconducting epitaxial layer.

公开(公告)号：US11542155B2

公开(公告)日：2023-01-03

申请号：US16770013

申请日：2018-11-21

Applicant: Soitec

Inventor： Charlotte Drazek ,  Djamel Belhachemi

IPC: H01L21/762 ,  H01L21/02 ,  B81C1/00

Abstract: A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.

公开(公告)号：US20220359293A1

公开(公告)日：2022-11-10

申请号：US17757797

申请日：2020-12-15

Applicant: Soitec

Inventor： Gweltaz Gaudin

IPC: H01L21/78

Abstract: The invention relates to a process for manufacturing a composite structure comprising a thin layer made of a first single-crystal material positioned on a support substrate. The process comprises: a step a) of providing a donor substrate (10) composed of the first single-crystal material having a front face (10a) and a back face (10b), a step b) of providing a support substrate (20) having a front face (20a), a back face (20b), an edge (20c) and a first alignment pattern (21) on one of said faces or on the edge, a step c) of heat treatment applied at least to the donor substrate (10), under a controlled atmosphere and at a temperature capable of bringing about a surface reorganization on at least one of the faces (10a, 10b) of said substrate (10), the surface reorganization giving rise to the formation of first steps (13) of nanometric amplitude, which are parallel to a first main axis (P1), a step d) of assembling the donor substrate (10) and the support substrate (20) comprising, before the substrates (10, 20) are brought into contact, an optical alignment, to better than ±0.1°, between a locating mark (12) indicating the first main axis (P1) on the donor substrate (10) and at least one alignment pattern (21, 22) of the support substrate (20), a step e) of transferring a thin layer (100) from the donor substrate (10) onto the support substrate (20).

公开(公告)号：US20220359272A1

公开(公告)日：2022-11-10

申请号：US17623499

申请日：2020-03-25

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ,  Soitec

Inventor： Emmanuel Augendre ,  Frédéric Gaillard ,  Thomas Lorne ,  Emmanuel Rolland ,  Christelle Veytizou ,  Isabelle Bertrand ,  Frédéric Allibert

IPC: H01L21/762 ,  H01L21/02

Abstract: A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm.cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm.cm. The invention also relates to a method for producing such a semiconductor structure.

公开(公告)号：US20220298007A1

公开(公告)日：2022-09-22

申请号：US17637040

申请日：2020-08-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  SOITEC

Inventor： Thierry SALVETAT ,  Bruno GHYSELEN ,  Lamine BENAISSA ,  Caroline COUTIER ,  Gweltaz GAUDIN

IPC: B81C1/00 ,  B81B7/04

Abstract: A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

公开(公告)号：US20220278269A1

公开(公告)日：2022-09-01

申请号：US17663569

申请日：2022-05-16

Applicant: Soitec

Inventor： Didier Landru

IPC: H01L41/313 ,  H03H9/02 ,  H01L41/053 ,  H01L41/08 ,  H01L41/083

Abstract: A method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

公开(公告)号：US20220247374A1

公开(公告)日：2022-08-04

申请号：US17597581

申请日：2020-03-26

Applicant: Soitec

Inventor： Isabelle Bertrand ,  Alexis Drouin ,  Isabelle Huyet ,  Eric Butaud ,  Morgane Logiou

IPC: H03H3/08 ,  H03H9/02

Abstract: A method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer, the method comprising the following steps: —preparing the support comprising forming the trapping layer on a base substrate, the trapping layer having a hydrogen concentration of less than 10{circumflex over ( )}18 at/cm{circumflex over ( )}; —joining the support to a donor substrate by way of a dielectric layer having a hydrogen concentration of less than 10{circumflex over ( )}20 at/cm{circumflex over ( )}3 or comprising a barrier preventing the diffusion of hydrogen toward the trapping layer or having low hydrogen diffusivity; —removing part of the donor substrate to form the thin layer; the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. The present disclosure also relates to a structure obtained at the end of this method.

公开(公告)号：US20220157650A1

公开(公告)日：2022-05-19

申请号：US17435631

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762

Abstract: A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.