公开(公告)号：USD618641S1

公开(公告)日：2010-06-29

申请号：US29346103

申请日：2009-10-27

Applicant: Hyung Yuel Kim ,  Jun Ki Kim ,  Sang Gi Kim ,  Mi Sun Park

Designer： Hyung Yuel Kim ,  Jun Ki Kim ,  Sang Gi Kim ,  Mi Sun Park

公开(公告)号：US07170044B2

公开(公告)日：2007-01-30

申请号：US10913398

申请日：2004-08-09

Applicant: Kun Sik Pakr ,  Seong Wook Yoo ,  Jong Moon Park ,  Yong Sun Yoon ,  Sang Gi Kim ,  Bo Woo Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo

Inventor： Kun Sik Pakr ,  Seong Wook Yoo ,  Jong Moon Park ,  Yong Sun Yoon ,  Sang Gi Kim ,  Bo Woo Kim ,  Yoon Kyu Bae ,  Byung Won Lim ,  Jin Gun Koo

IPC: H01J40/14

CPC classification number: H01L31/02161 ,  H01L31/02019 ,  H01L31/022408

Abstract: Provided is a photodetector in which a transparent nonconductive material having an interface charge and a trapped charge is deposited on a semiconductor surface so as to form a depletion region on the surface of the semiconductor, and the depletion region is employed as an optical detecting region, thereby not only improving detection with respect to light having a wavelength of ultraviolet and blue ranges but also filtering light having a wavelength of visible and infrared ranges, and in which a fabricating process thereof is compatible with a universal silicon CMOS process.

Abstract translation: 提供了一种光电检测器，其中具有界面电荷和俘获电荷的透明非导电材料沉积在半导体表面上，以在半导体的表面上形成耗尽区，并且耗尽区被用作光学检测区域， 从而不仅能够提高对具有紫外线和蓝色范围的波长的光的检测，而且可以改善具有可见光和红外范围的波长的滤光，并且其制造方法与通用硅CMOS工艺相兼容。