VARIABLE ATTENUATOR
    31.
    发明申请

    公开(公告)号:US20210083355A1

    公开(公告)日:2021-03-18

    申请号:US17108769

    申请日:2020-12-01

    发明人: Akio OYA

    IPC分类号: H01P1/22

    摘要: A variable attenuator is an attenuator which is formed by coupling two transmission lines having an electrical length of λ/4 corresponding to a wavelength λ of an input signal, has one end of one transmission line as an input terminal, has the other end of the one transmission line as a through terminal, has one end of the other transmission line as a coupling terminal and has the other end of the other transmission line as an output terminal, wherein the variable attenuator has a resistor pair having the same impedance at both the through terminal and the coupling terminal, and has a resistor pair having the same impedance at both the input terminal and the output terminal.

    SEMICONDUCTOR DEVICE AND PROCESS OF FORMING THE SAME

    公开(公告)号:US20210083092A1

    公开(公告)日:2021-03-18

    申请号:US17060960

    申请日:2020-10-01

    发明人: Takuma NAKANO

    摘要: A semiconductor device type of field effect transistor (FET) primarily made of nitride semiconductor materials is disclosed. The FET includes a nitride semiconductor stack providing primary and auxiliary active regions and an inactive region surrounding the active regions; electrodes of a source, a drain, and a gate; an insulating film covering the electrodes and the semiconductor stack; and a field plate on the insulating film. A feature of the FET of the invention is that the field plate is electrically in contact with the auxiliary active region through the opening provided in the insulating film.

    SEMICONDUCTOR DEVICE
    33.
    发明申请

    公开(公告)号:US20210035931A1

    公开(公告)日:2021-02-04

    申请号:US16942177

    申请日:2020-07-29

    摘要: Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

    RECEIVER OPTICAL MODULE AND PROCESS OF ASSEMBLING THE SAME

    公开(公告)号:US20200328199A1

    公开(公告)日:2020-10-15

    申请号:US16915154

    申请日:2020-06-29

    发明人: Kyohei MAEKAWA

    摘要: A receiver optical module that receives an optical signal and generating an electrical signal corresponding to the optical signal is disclosed. The module includes a photodiode (PD), a sub-mount, a pre-amplifier, and a stem. The sub-mount, which is made of insulating material, mounts the PD thereon. The pre-amplifier, which receives the photocurrent generated by the PD, mounts the PD through the sub-mount with an adhesive. The pre-amplifier generates an electrical signal corresponding to the photocurrent and has signal pads and other pads. The stem, which mounts the pre-amplifier, provides lead terminals wire-bonded with the signal pads of the pre-amplifier. The signal pads make distances against the sub-mount that are greater than distances from the other pads to the sub-mount.

    Optical module having wiring and bridge substrates for modulation signals

    公开(公告)号:US10802303B2

    公开(公告)日:2020-10-13

    申请号:US16150327

    申请日:2018-10-03

    摘要: An optical module including a source assembly is disclosed. The source assembly provides a semiconductor optical device, a wiring substrate, and a bridge substrate. The semiconductor optical device includes an electrode and a pad that receives a driving signal therethrough. The wiring substrate, which is arranged side by side with respect to the semiconductor optical device, provides a signal line and a ground line surrounding the signal line. The bridge substrate includes a signal line and a ground line surrounding the signal line. A feature of the optical module is that the bridge substrate is placed on the semiconductor optical device and the wiring substrate such that a transmission line thereof faces the semiconductor optical device and the wiring substrate, and one end of the signal line thereof is connected with the pad of the semiconductor optical device through a post, and another end of the signal line thereof is connected with an end of the signal line in the wiring substrate through another post.

    INTEGRATED DOHERTY AMPLIFIER
    37.
    发明申请

    公开(公告)号:US20200321918A1

    公开(公告)日:2020-10-08

    申请号:US16834475

    申请日:2020-03-30

    IPC分类号: H03F1/02 H03F1/56 H03F3/68

    摘要: An integrated Doherty amplifier based on a multichip module structure is disclosed. The amplifier comprises an input integrated passive die including a Wilkinson power divider, a phase compensation circuit and input matching circuits for the main and peaking amplifiers based on lumped components, the active GaN HEMT die including the main device, a peaking device and a bondwire inductor connected between the drain terminals of the main and peaking devices, and an output matching network including a two-section matching circuit with low-pass and high-pass matching section operating as an impedance-transforming bandpass filter and a dc-feed power supply circuit based on lumped components and microstrip lines.

    MICROWAVE INTEGRATED CIRCUIT
    39.
    发明申请

    公开(公告)号:US20200294941A1

    公开(公告)日:2020-09-17

    申请号:US16815827

    申请日:2020-03-11

    发明人: Kenshi Naito

    IPC分类号: H01L23/66 H01L23/498

    摘要: Provided is a microwave integrated circuit including: a semiconductor substrate; a plurality of amplification units that are formed in the semiconductor substrate; a wiring that is formed in one layer wiring excluding an uppermost layer wiring and a lowermost layer wiring among a plurality of layer wirings formed on the semiconductor substrate and is used for supplying power to the plurality of amplification units; and a plurality of vias that connect a plurality of conductive regions formed in the layer wiring with the wiring interposed therebetween and other conductive regions formed in a region interposing the wiring in the two layer wirings immediately above and immediately below the layer wiring, in which each of the plurality of vias forms a via structure connected to the conductive regions of the lowermost layer wiring by a plurality of other vias.

    Amplifier module
    40.
    发明授权

    公开(公告)号:US10763802B2

    公开(公告)日:2020-09-01

    申请号:US16168965

    申请日:2018-10-24

    发明人: Naoyuki Miyazawa

    摘要: An amplifier module that implements two or more amplifying units connected in series is disclosed. The amplifier module includes a package, input and output terminals, two or more amplifying units including the first unit and the final unit, an output bias terminal for supplying an output bias to one of amplifying units except for the final unit, and an input bias terminal for supplying an input bias to another one of the amplifying units except for the first unit. A feature of the amplifier module is that the output bias terminal and the input bias terminal are disposed in axial symmetry with respect to a reference axis connecting the input terminal with the output terminal in one side of the package.