公开(公告)号：US09275834B1

公开(公告)日：2016-03-01

申请号：US14627991

申请日：2015-02-20

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01L21/32136 ,  H01L21/32137

Abstract: A method of removing titanium nitride is described. The silicon nitride resides on a patterned substrate. The titanium nitride is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor, a nitrogen-and-hydrogen-containing precursor and an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛的方法。 氮化硅位于图案化衬底上。 使用在含氟前体，含氮和氢的前体和含氧前体的远程等离子体中形成的等离子体流出物，通过气相蚀刻除去氮化钛。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US20150126039A1

公开(公告)日：2015-05-07

申请号：US14269544

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Jingchun Zhang ,  Anchuan Wang ,  Jie Liu

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/3346

Abstract: Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X

Abstract translation: 描述了相对于硅锗选择性地蚀刻硅的方法。 该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。 等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。 对于X

公开(公告)号：US08951429B1

公开(公告)日：2015-02-10

申请号：US14136200

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Xikun Wang ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: B44C1/22 ,  C23F1/00 ,  C23F3/00 ,  H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01L21/31122

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. Increasing a flow of ammonia during the process removes a typical skin of tungsten oxide having higher oxidation coordination number first and then selectively etching lower oxidation tungsten oxide. In some embodiments, the tungsten oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于钨，氧化硅，氮化硅和/或氮化钛选择性地蚀刻氧化钨的方法。 这些方法包括使用由含氟前体与氨（NH 3）组合形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钨反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钨，同时非常缓慢地除去其它暴露的材料。 在该过程中增加氨的流动首先除去具有较高氧化配位数的氧化钨的典型表面，然后选择性地蚀刻较低的氧化氧化钨。 在一些实施例中，氧化钨蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。