公开(公告)号：US09437451B2

公开(公告)日：2016-09-06

申请号：US14703333

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

公开(公告)号：US09299575B2

公开(公告)日：2016-03-29

申请号：US14215701

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Sang-jin Kim

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32136

Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.

Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括使用由含氟前体形成的等离子体流出物和大量氦气的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与钨涂覆具有高纵横比沟槽的图案化衬底。 等离子体流出物与暴露的表面反应，并从沟槽的外部和沟槽的侧壁均匀地除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。 可选地，所述方法可以包括图案化衬底的同时离子轰击，以帮助去除潜在的较厚的水平钨区域，例如在沟槽的底部或沟槽之间。

公开(公告)号：US09111877B2

公开(公告)日：2015-08-18

申请号：US13790668

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物有缺陷到基板处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 因此，反应物在衬底处于升高的温度下产生蚀刻，具有高氧化钛选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

公开(公告)号：US20140179111A1

公开(公告)日：2014-06-26

申请号：US13791125

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US20150235863A1

公开(公告)日：2015-08-20

申请号：US14703333

申请日：2015-05-04

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jingchun Zhang ,  Ching-Mei Hsu ,  Seung Park ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含氮和氢的前体结合。 因此，与典型的Siconi TM工艺相比，反应物在衬底处于高温下时蚀刻具有高氧化硅选择性的图案化异质结构。 蚀刻进行而不会在基板表面上产生残留物。 该方法可以用于去除硅或氧化硅，同时除去硅或多晶硅，氮化硅或氮化钛。

公开(公告)号：US20150118857A1

公开(公告)日：2015-04-30

申请号：US14584099

申请日：2014-12-29

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Jingchun Zhang ,  Anchuan Wang ,  Nitin K. Ingle ,  Seung Park ,  Zhijun Chen ,  Ching-Mei Hsu

IPC: H01L21/3213

CPC classification number: H01L21/32136 ,  H01J37/32357

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Abstract translation: 描述了相对于图案化异质结构上的其它材料蚀刻暴露的氮化钛的方法，并且可以包括由含氟前体形成的远程等离子体蚀刻。 包括来自远程等离子体的等离子体流出物的前体组合流入基板处理区域以在各种操作条件下以高氮化钛选择性蚀刻图案化结构。 该方法可用于以比各种金属，氮化物和氧化物化合物更快的速率除去氮化钛。

公开(公告)号：US20140166617A1

公开(公告)日：2014-06-19

申请号：US13790668

申请日：2013-03-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: C23F1/12

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物有缺陷到基板处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 因此，反应物在衬底处于升高的温度下产生蚀刻，具有高氧化钛选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

公开(公告)号：US20160260588A1

公开(公告)日：2016-09-08

申请号：US15158396

申请日：2016-05-18

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Anchuan Wang

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.

Abstract translation: 可调等离子体蚀刻工艺包括在包含NH 3和NF 3的源气体的受控流中产生等离子体以形成等离子体产物流，从而控制加入到等离子体产物流中的未活化NH 3的流动以形成蚀刻 气流; 以及通过调节源气体的受控流量和未活化的NH 3的流量中的至少一个来控​​制蚀刻气体流的压力，直到压力在所需压力的公差内。 通过蚀刻气流的多晶硅和二氧化硅中的至少一种的蚀刻速率可以通过改变源气体的受控流量与未活化NH 3的流量的比例来调节。

公开(公告)号：US20150357201A1

公开(公告)日：2015-12-10

申请号：US14828311

申请日：2015-08-17

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

Abstract translation: 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 由此产生的反应物在衬底处于升高的温度下蚀刻具有高钛氧化物选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

公开(公告)号：US20150262829A1

公开(公告)日：2015-09-17

申请号：US14215701

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Seung Park ,  Xikun Wang ,  Jie Liu ,  Anchuan Wang ,  Sang-jin Kim

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J2237/334 ,  H01L21/32136

Abstract: Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with tungsten coating a patterned substrate having high aspect ratio trenches. The plasmas effluents react with exposed surfaces and evenly remove tungsten from outside the trenches and on the sidewalls of the trenches. The plasma effluents pass through an ion suppression element positioned between the remote plasma and the substrate processing region. Optionally, the methods may include concurrent ion bombardment of the patterned substrate to help remove potentially thicker horizontal tungsten regions, e.g., at the bottom of the trenches or between trenches.

Abstract translation: 描述了从高纵横比沟槽均匀地蚀刻钨衬垫的方法。 这些方法包括使用由含氟前体形成的等离子体流出物和大量氦气的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与钨涂覆具有高纵横比沟槽的图案化衬底。 等离子体流出物与暴露的表面反应，并从沟槽的外部和沟槽的侧壁均匀地除去钨。 等离子体流出物通过位于远程等离子体和基板处理区域之间的离子抑制元件。 可选地，所述方法可以包括图案化衬底的同时离子轰击，以帮助去除潜在的较厚的水平钨区域，例如在沟槽的底部或沟槽之间。