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    DEPOSITION OF TRANSITION METAL -COMPRISING MATERIAL
    35.
    发明申请
    DEPOSITION OF TRANSITION METAL -COMPRISING MATERIAL 有权

    公开(公告)号：US20220251701A1

    公开(公告)日：2022-08-11

    申请号：US17666903

    申请日：2022-02-08

    Applicant: ASM IP Holding B.V.

    Inventor： Miika Mattinen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

    IPC: C23C16/18 ,  C23C16/08

    Abstract: The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

    ATOMIC LAYER DEPOSITION AND ETCHING OF TRANSITION METAL DICHALCOGENIDE THIN FILMS
    36.
    发明申请
    ATOMIC LAYER DEPOSITION AND ETCHING OF TRANSITION METAL DICHALCOGENIDE THIN FILMS 有权

    公开(公告)号：US20210388503A1

    公开(公告)日：2021-12-16

    申请号：US17303806

    申请日：2021-06-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： Jani Hämäläinen ,  Mikko Ritala ,  Markku Leskelä

    IPC: C23C16/56 ,  H01L21/02 ,  H01L21/465 ,  C23C16/455 ,  C23F1/12 ,  C23C16/30

    Abstract: Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition metal precursor, such as a transition metal halide, a reactant comprising a reducing agent, such as NH3 and a chalcogenide precursor. In some embodiments rhenium sulfide thin films are deposited using a vapor phase rhenium halide precursor, a reducing agent and a sulfur precursor. The deposited TMDC films can be etched by chemical vapor etching using an oxidant such as O2 as the etching reactant and an inert gas such as N2 to remove excess etching reactant. The TMDC thin films may find use, for example, as 2D materials.

    VAPOR DEPOSITION OF THIN FILMS COMPRISING GOLD
    38.
    发明申请
    VAPOR DEPOSITION OF THIN FILMS COMPRISING GOLD 有权

    公开(公告)号：US20210277519A1

    公开(公告)日：2021-09-09

    申请号：US17330994

    申请日：2021-05-26

    Applicant: ASM IP Holding B.V.

    Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

    IPC: C23C16/455 ,  C23C16/18 ,  C23C16/06

    Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

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