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31.发明申请CALCULATING IMAGE INTENSITY OF MASK BY DECOMPOSING MANHATTAN POLYGON BASED ON PARALLEL EDGE 有权基于平行边缘分解曼哈顿多边形计算蒙片的图像强度公开(公告)号：US20090185740A1
公开(公告)日：2009-07-23
申请号：US12015768
申请日：2008-01-17
IPC分类号： G06K9/00
摘要： A method, system, computer program product and table lookup system for calculating image intensity for a mask used in integrated circuit processing are disclosed. A method may comprise: decomposing a Manhattan polygon of the mask into decomposed areas based on parallel edges of the Manhattan polygon along only one dimension; determining a convolution of each decomposed area based on a table lookup; determining a sum of coherent systems contribution of the Manhattan polygon based on the convolutions of the decomposed areas; and outputting the determined sum of coherent system contribution for analyzing the mask.
摘要翻译： 公开了一种用于计算集成电路处理中使用的掩模的图像强度的方法，系统，计算机程序产品和表查找系统。 方法可以包括：基于曼哈顿多边形沿着一个维度的平行边缘，将掩模的曼哈顿多边形分解为分解区域; 基于表查找确定每个分解区域的卷积; 基于分解区域的卷积确定曼哈顿多边形的相干系统贡献的总和; 并输出确定的用于分析掩模的相干系统贡献的总和。
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公开(公告)号：US07512927B2
公开(公告)日：2009-03-31
申请号：US11555854
申请日：2006-11-02
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A fast method of verifying a lithographic mask design is provided wherein catastrophic errors are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models, including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side-lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.
摘要翻译： 提供了一种验证光刻掩模设计的快速方法，其中通过使用逐渐更精确的图像模型（包括光学和抗蚀剂模型）迭代地模拟和验证用于掩模布局的图像来识别灾难性错误。 逐步准确的光学模型包括提供连续影响较小的SOCS内核。 构造相应的抗蚀剂模型，其可以仅包括对应于光学模型的SOCS核项，或者可以包括不同影响范围的图像特征项。 优选用亮场模拟来识别与过多光线相关的错误，例如桥接，旁瓣或SRAF打印错误，而与光线不足相关的错误，例如颈缩或线端缩短覆盖误差，优选地用暗场 模拟。
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公开(公告)号：US5159172A
公开(公告)日：1992-10-27
申请号：US564007
申请日：1990-08-07
IPC分类号： G02B17/00 , G02B17/02 , G02B17/08 , G02B19/00 , G02B27/18 , G03F7/20 , H01L21/027 , H01L21/30 , H01S3/101
CPC分类号： G02B17/008 , G02B17/026 , G02B17/08 , G02B17/0856 , G02B17/0892 , G02B17/0896 , G02B19/0028 , G02B19/0047 , G02B19/0095 , G03F7/70225 , G03F7/70358
摘要： An optical system having a plurality of substantially planar reflecting surfaces and a plurality of curved reflecting surfaces providing an optical projection system which can scan a mask object onto an image plane by having the mask and copy substrate substantially fixed in position relative to each other and either simultaneously moving the mask and copy substrate in the same direction or maintaining the mask and image plane substantially stationary and fixed with respect to each other while scanning the optical system. The optical system uses one wavelength of an electromagnetic radiation to align the mask to the copy substrate and another wavelength of electromagnetic radiation to form the image of the mask on the copy substrate. The apparatus can be used as a laser ablation optical tool to laser ablate the image of a mask onto the copy substrate, as an inspection tool, as a photolithographic and for other related applications. The projection lens is a modified Dyson type lens.
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34.发明授权System and method for projection lithography with immersed image-aligned diffractive element 失效具有浸入图像对准衍射元件的投影光刻系统和方法公开(公告)号：US08537444B2
公开(公告)日：2013-09-17
申请号：US13618821
申请日：2012-09-14
IPC分类号： G03H1/08
CPC分类号： G03H1/02 , G03F7/70466 , G03H1/0244 , G03H1/0402 , G03H1/08 , G03H2001/0094 , G03H2001/2615 , G03H2222/47 , G03H2240/56
摘要： A system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. Designing lithographic masks further includes fabricating the hologram and projecting the illuminating wavefront. A simple personalization based on Talbot fringes and plasmonic interference is further performed.
摘要翻译： 一种系统和方法以及计算机程序产品，用于以比在相同波长下形成的普通图像物理地投射到薄膜上更精细的分辨率的图案来曝光光致抗蚀剂膜。 首先在光致抗蚀剂膜上方形成包含一组可分辨空间频率的全息图结构。 包含第二组可分辨空间频率的照明波前通过全息图投射，形成一组新的曝光光致抗蚀剂的透射空间频率。 所发送的空间频率包括比存在于全息图或照明波前的频率更高的和频，增加曝光图案的分辨率。 设计光刻掩模还包括制造全息图并投射照明波前。 进一步执行基于Talbot条纹和等离子体激元干扰的简单个性化。
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35.发明申请Determining manufacturability of lithographic mask based on manufacturing shape penalty of aspect ratio of edge that takes into account pair of connected edges of the edge 失效基于边缘长宽比的制造形状损失考虑到边缘的连接边缘对，确定平版印刷掩模的可制造性公开(公告)号：US20120196210A1
公开(公告)日：2012-08-02
申请号：US13017593
申请日：2011-01-31
CPC分类号： G06F17/5081 , G03F1/0069 , G03F1/30 , G03F1/36 , G03F1/38 , G03F1/70 , G06F19/00 , G21K5/00
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge.
摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从掩模的掩模布局数据中选择目标边对，用于确定制作掩模时的制造损失。 基于所选择的目标边缘对来确定掩模的可制造性，包括制造掩模时的制造损失，并且取决于制造掩模时的制造损失。 确定掩模的可制造性包括：对于具有至少基本上彼此平行的第一和第二边缘的所选边缘对，由于第一边缘的纵横比相对于第一边缘的宽度比， 第一边缘和第二边缘。 这种惩罚考虑到第一边缘的至少基本平行于第一边缘的一对连接的边缘。
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36.发明申请公开(公告)号：US20120092633A1
公开(公告)日：2012-04-19
申请号：US13324092
申请日：2011-12-13
申请人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
发明人： Kafai Lai , Dirk Pfeiffer , Alan E. Rosenbluth
IPC分类号： G03B27/42
CPC分类号： G03F7/70216
摘要： A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.
摘要翻译： 一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。 成像工具将包含空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂，以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。 光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分 从所述抗蚀剂层区域的光敏性，改善所述抗蚀剂层区域中的空间像的光敏性的对比度。
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37.发明授权公开(公告)号：US08161422B2
公开(公告)日：2012-04-17
申请号：US12349108
申请日：2009-01-06
IPC分类号： G06F17/50
摘要： A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI1 to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.
摘要翻译： 提供了一种用于在用于制造半导体集成电路的光掩模的设计中对光刻工艺进行建模的方法，更具体地说，用于模拟中间范围闪光效应。 对于当点扩散函数具有根据预定标准缓慢变化的斜率时，从约5λ/ NA的第一ROI1到距离ROI2的影响区域（ROI），则至少在从ROI1到ROI2的距离范围内的掩模形状 在计算SOCS卷积之前进行平滑处理。 该方法提供了一种用于以足够的精度模拟中等范围闪光效果的快速方法。
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38.发明申请METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS 失效一种用于多次曝光的光刻过程产生多重优化波形的方法公开(公告)号：US20120077130A1
公开(公告)日：2012-03-29
申请号：US12890854
申请日：2010-09-27
申请人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
CPC分类号： G03F7/70466 , G03F1/70
摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
摘要翻译： 解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。 简化是将完整的问题减少到无约束的公式。 将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。 可以为每个源获得简化问题的极值解。 然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。 最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。 该空间通常通过选择最高质量的极值解决方案降低维度。
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公开(公告)号：US08073288B2
公开(公告)日：2011-12-06
申请号：US12015084
申请日：2008-01-16
IPC分类号： G06K9/20
摘要： A method, system and computer program product for rendering a mask are disclosed. A method of rendering a mask may comprise: providing an initial mask design for a photolithographic process, the initial mask design including polygons; initially rendering the initial mask design as a coarse mask representation in a pixel based image calculation; identifying an overhang portion; and rendering the overhang portion using a set of subpixels whose artifacts from spatial-localization lie outside a practical resolution of a pseudo lens having a numerical aperture larger than that of a projection lens used in the photolithographic process; and updating the initial rendering based on the overhang portion rendering.
摘要翻译： 公开了一种用于渲染掩模的方法，系统和计算机程序产品。 渲染掩模的方法可以包括：提供用于光刻工艺的初始掩模设计，初始掩模设计包括多边形; 最初在基于像素的图像计算中将初始掩模设计呈现为粗糙掩模表示; 识别突出部分; 并且使用一组子空间渲染悬伸部分，其中来自空间定位的伪像位于具有大于在光刻工艺中使用的投影透镜的数值孔径的假透镜的实际分辨率之外; 并基于突出部分呈现来更新初始呈现。
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40.发明授权Method, computer program, apparatus and system providing printing for an illumination mask for three-dimensional images 有权方法，计算机程序，设备和系统，为三维图像的照明掩模提供打印公开(公告)号：US07969554B2
公开(公告)日：2011-06-28
申请号：US11778750
申请日：2007-07-17
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70125
摘要： A method able to provide illumination source parameters for illumination of a lithographic mask in order to project a three-dimensional image into a resist system. Source intensities of incident beams are determined using a near linear program and responsive to an allowed range of variation. Computer program, apparatus and system are detailed and variations are described.
摘要翻译： 一种能够提供用于照射光刻掩模的照明源参数以便将三维图像投影到抗蚀剂系统中的方法。 入射光束的光源强度使用近似线性程序确定，并响应允许的变化范围。 详细描述了计算机程序，装置和系统，并对其进行了描述。
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