公开(公告)号：US5543349A

公开(公告)日：1996-08-06

申请号：US448034

申请日：1995-05-23

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01L9/00 ,  H01L21/3205

CPC分类号： G01L9/0019 ,  Y10S148/012

摘要： A pressure transducer comprising at least one diaphragm formed in a wafer of semiconducting material, the at least one diaphragm being spaced from a first surface of the wafer, a first layer of semiconducting material disposed over the at least one diaphragm, the first layer forming at least one resonating beam over the at least one diaphragm, and a plurality of resistor elements formed from a third layer of semiconducting material disposed over the at least one resonating beam, and isolation means for dielectrically isolating the at least one resonating beam from the at least one diaphragm.

摘要翻译： 一种压力传感器，包括形成在半导体材料晶片中的至少一个光阑，所述至少一个光阑与所述晶片的第一表面间隔开，设置在所述至少一个光阑上的第一层半导体材料，所述第一层形成在 在所述至少一个隔膜上的至少一个谐振束，以及由设置在所述至少一个谐振束上的第三层半导体材料形成的多个电阻元件，以及隔离装置，用于将所述至少一个谐振束与所述至少一个谐振束 一个隔膜

公开(公告)号：US20100193908A1

公开(公告)日：2010-08-05

申请号：US12757435

申请日：2010-04-09

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L29/8605

CPC分类号： H01L21/76251

摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 500 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 500 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.

摘要翻译： 一种制造绝缘体上半导体器件的方法，包括：提供其上具有约500埃厚的氧化物层的第一半导体晶片; 蚀刻第一半导体晶片以在其中升高图案; 通过约500埃厚的氧化物层掺杂第一半导体晶片的凸起图案; 提供其上具有氧化物的第二半导体晶片; 并且在升高的温度下将第一半导体晶片氧化物接合到第二半导体晶片氧化物。

公开(公告)号：US07258018B2

公开(公告)日：2007-08-21

申请号：US11258787

申请日：2005-10-26

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01L7/08

CPC分类号： G01L9/0042 ,  G01L9/0055

摘要： A semiconductor chip for use in fabricating pressure transducers, including: a semiconductor wafer having a top and a bottom surface, a layer of an insulating material formed on the top surface, the bottom surface having at least two recesses of substantially equal dimensions and spaced apart, the recesses providing first and second substantially equal thin active areas, which areas deflect upon application to a force applied to the top surface, a first plurality of piezoresistive devices arranged in a given pattern and positioned on the insulating material and located within the first area, a second equal plurality of piezoresistive devices arranged in the identical pattern and located on the insulating material within the second active area, first connecting means for connecting the first plurality of piezoresistive devices in a first array, second connecting means for connecting the second plurality of piezoresistive devices in a second array corresponding to the first array.

摘要翻译： 一种用于制造压力传感器的半导体芯片，包括：具有顶表面和底表面的半导体晶片，形成在顶表面上的绝缘材料层，底表面具有至少两个基本相等尺寸的凹槽和间隔开的凹槽 ，所述凹部提供第一和第二基本相等的薄有源区域，所述区域在施加到施加到顶表面的力上时偏转;以给定图案布置并定位在绝缘材料上并位于第一区域内的第一多个压阻器件 设置在相同图案中并位于第二有源区域内的绝缘材料上的第二等量多个压阻器件，用于将第一多个压阻器件连接在第一阵列中的第一连接装置，用于连接第二多个 第二阵列中的压阻器件对应于第一阵列。

公开(公告)号：US07183620B2

公开(公告)日：2007-02-27

申请号：US11157584

申请日：2005-06-21

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L29/84

CPC分类号： G01L19/147

摘要： A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.

摘要翻译： 差压传感器具有具有顶表面和底表面的半导体晶片。 晶片的顶表面具有包含压阻元件的中心活动区域。 这些元件被钝化并被一层二氧化硅覆盖。 每个元件具有与其相关联的接触端子。 半导体晶片具有围绕有源区域的外周硅框架。 通过将外周框架结合到玻璃晶片的周边，通过阳极或静电键将半导体晶片接合到玻璃盖构件。 当玻璃晶片结合到硅框架时，内部二氧化硅框架与玻璃晶片形成压缩结合。 这种压接键可防止有害流体进入活性区或破坏硅。 将上述装置安装在集管上，使得玻璃晶片中的通孔与集管端子对准。 插头具有从插头端子引导的引脚，以使得能够对该单元进行接触。 半导体晶片的顶表面和底表面均涂覆有二氧化硅，其用于保护所有元素免受有害物质的影响。 因此，第一压力施加到一个表面，并且第二压力施加到另一个表面以实现差动操作。

公开(公告)号：US07057247B2

公开(公告)日：2006-06-06

申请号：US10016035

申请日：2001-12-12

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L29/82 ,  H01L23/10

CPC分类号： G01L13/025 ,  H01L21/2007

摘要： There is disclosed a combined absolute differential pressure transducer which consists of two sensors made from the same wafer silicon and selected to be adjacent to each other on the wafer. Since the same pressure is applied to the boss side of both sensors and a second pressure is applied to the opposite side of the differential sensor, deflection and the stress of the second sensor is determined by the pressure difference across the deflecting portion of the sensor. To obtain the same stresses in the thin section of each sensor, the overall active area of each sensor is different. For the same thickness read, the absolute value of P2−P1 where P2 is the pressure applied to the front side of the two sensors and P1 is the pressure applied to the differential sensor through the metal tube is less than P2 to obtain the same stress in each sensor a great active area in the differential sensor is required. Conversely, if the absolute value of P2−P1 is greater than P2, then a smaller active area in the differential sensor is required. By choosing adjacent sensors with the same web thickness, but different size active areas the thermal co-efficient and the thermal sensitivity are controlled by the impurity concentrations of the P regions and by how well they match each other. Thus, the thermal properties of the two individual sensors are closely controlled and matched to each other resulting in an improved overall combined absolute differential transducer.

摘要翻译： 公开了一种组合的绝对差压传感器，其由由相同晶片硅制成并被选择为在晶片上彼此相邻的两个传感器组成。 由于相同的压力施加到两个传感器的凸台侧，并且第二压力被施加到差动传感器的相反侧，所以第二传感器的偏转和应力由传感器的偏转部分两端的压差决定。 为了在每个传感器的薄部分获得相同的应力，每个传感器的总有效面积是不同的。 对于相同的厚度读数，P <2> P 其中P <2>的绝对值是施加到两侧的前侧的压力 传感器和P＆lt; 1＆lt; 1＆gt;是通过金属管施加到差动传感器的压力小于P <2>以在每个传感器中获得相同的应力，差动器中的有效面积大 传感器是必需的。 相反，如果P <2> P <1>的绝对值大于P 2> 2，则需要差分传感器中较小的有效面积 。 通过选择具有相同网幅厚度但具有不同尺寸的有源区域的相邻传感器，热系数和热敏感度由P区域的杂质浓度以及它们彼此匹配的程度来控制。 因此，两个单独的传感器的热性能被紧密地控制并彼此匹配，从而产生改进的整体组合的绝对差分换能器。

公开(公告)号：US06813956B2

公开(公告)日：2004-11-09

申请号：US10404308

申请日：2003-04-01

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01L900

CPC分类号： G01L19/0618 ,  G01L9/0042 ,  G01L9/0054

摘要： A stop member is secured to a piezoresistive semiconductor bossed diaphragm at the peripheral area, and includes a first and second slotted apertures in communication with the central active area, the first and second slotted apertures correspond in location with opposing sides of a central boss. The stop member includes a stop cavity located between the first slotted aperture and the second slotted aperture, and the stop cavity overlies the central boss and is separated therefrom to enable the diaphragm to deflect when a force is applied and to enable the central boss to impinge on the surface of the stop cavity when an excessive force is applied. The first and second slotted apertures permit another force to be applied to the active region of the diaphragm in a direction opposite to the stopped direction. A second stop member is secured to the diaphragm to provide stopping in either direction.

摘要翻译： 止动构件固定在外围区域处的压阻半导体凸起隔膜，并且包括与中心有源区域连通的第一和第二开槽孔，第一和第二开槽孔位于中央凸台的相对侧的位置。 止动构件包括位于第一开槽孔和第二开槽孔之间的止动腔，并且止动腔覆盖中心凸台并与其分离，使得隔膜在施加力时能够偏转，并且使得中心凸台能够撞击 当施加过大的力时，在止动腔的表面上。 第一和第二开槽孔允许另一个力在与阻挡方向相反的方向上施加到隔膜的有源区域。 第二止动件固定在隔膜上以在任一方向上提供停止。

公开(公告)号：US06691581B2

公开(公告)日：2004-02-17

申请号：US09271674

申请日：1999-03-18

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： G01L900

CPC分类号： G01L1/2293 ,  G01L9/0055

摘要： A method for fabricating a dielectrically isolated silicon carbide high temperature pressure transducer which is capable of operating at temperatures above 600° C. The method comprises applying a layer of beta silicon carbide of a first conductivity, on a first substrate of silicon. A layer of beta silicon carbide of a second conductivity is then applied on a second substrate. A layer of silicon is sputtered, evaporated or otherwise formed on the silicon carbide surfaces of each of the substrates of the beta silicon carbide. The sputtered silicon layer on each substrate is then completely oxidized forming a layer of SiO2 from the silicon. The first and second substrates are subsequently fusion bonded together along the oxide layers of the first and second substrate with the oxide layer providing dielectric isolation between the first and second wafers. This oxide layer, which is formed from the Si layer, has a much lower defect density than SiO2 formed directly from SiC. At least one sensing element is then fabricated from the beta silicon carbide of the second conductivity, and the overlaying original silicon on the second substrate is moved.

摘要翻译： 一种用于制造能够在高于600℃的温度下操作的介电离子的碳化硅高温压力传感器的方法。该方法包括在第一硅衬底上施加第一导电性的β碳化硅层。 然后将第二电导率的β碳化硅层施加在第二衬底上。 在硅碳化硅的每个基板的碳化硅表面上溅射，蒸发或以其它方式形成硅层。 然后，每个衬底上的溅射硅层被完全氧化，从硅形成一层SiO 2。 第一和第二衬底随后沿着第一和第二衬底的氧化物层熔合在一起，氧化物层在第一和第二晶片之间提供绝缘隔离。 由Si层形成的该氧化物层具有比直接由SiC形成的SiO 2低得多的缺陷密度。 然后从第二导电性的β碳化硅制造至少一个感测元件，并且移动第二衬底上的覆盖原始硅。

公开(公告)号：US06689669B2

公开(公告)日：2004-02-10

申请号：US10008313

申请日：2001-11-03

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L2130

CPC分类号： G01K7/226 ,  G01K7/003 ,  Y10S438/931 ,  Y10S438/977

摘要： Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of crystalline doped silicon carbide. The device is a 3C—SiC/SiO2/SiC structure. This structure can be employed to fabricate high temperature devices such as piezoresistive sensors, minority carrier devices and so on. The crystalline doped silicon carbide is dielectrically isolated from the substrate. The devices are formed by processes that include bonding a pattern wafer to a substrate wafer, selective oxidation and removal of undoped silicon, and conversion of doped silicon to crystalline silicon carbide. The level of doping and the crystalline structure of the silicon carbide can be selected according to desired properties for particular applications.

摘要翻译： 可用于高温感测应用的半导体器件包括碳化硅衬底，二氧化硅层和晶体掺杂碳化硅的外层。 该器件是3C-SiC / SiO2 / SiC结构。 该结构可用于制造诸如压阻传感器，少数载流子装置等的高温装置。 晶体掺杂碳化硅与衬底介电隔离。 器件由包括将图案晶片结合到衬底晶片，选择性氧化和去除未掺杂硅的工艺形成，以及将掺杂硅转化为结晶碳化硅。 可以根据特定应用的所需性质来选择掺杂水平和碳化硅的晶体结构。

公开(公告)号：US06593209B2

公开(公告)日：2003-07-15

申请号：US10002260

申请日：2001-11-15

申请人： Anthony D. Kurtz ,  Alexander A. Ned

发明人： Anthony D. Kurtz ,  Alexander A. Ned

IPC分类号： H01L2176

CPC分类号： G01L9/0042

摘要： In order to close or cover micropipes, which generally are formed in SiC bulk material, one sputters or deposits or grows a layer of silicon on the backside of a micromachined silicon carbide diaphragm. This is followed by an oxidation process. In this approach, the deposition of silicon reduces or completely plugs the micropipes. After the silicon deposition, the wafer is oxidized which completely closes the otherwise reduced micropipes. Since the oxidation process is significantly faster than silicon and SiC, it is significantly easier to close even the largest of micropipes. The thickness of the silicon, the processing for depositing or growing silicon, and the process of oxidation can be adjusted to close micropipes in different SiC materials.

公开(公告)号：US5750898A

公开(公告)日：1998-05-12

申请号：US727882

申请日：1996-10-09

申请人： Anthony D. Kurtz ,  Alexander A. Ned ,  Timoteo I. Vergel de Dios

发明人： Anthony D. Kurtz ,  Alexander A. Ned ,  Timoteo I. Vergel de Dios

IPC分类号： G01L9/00 ,  H01L21/314 ,  G01L9/06

CPC分类号： H01L21/314 ,  G01L9/0055 ,  Y10S438/958

摘要： A method for passivating diamond films to substantially prevent them from oxidizing at temperatures up to 800.degree. C. in an oxygen atmosphere. The method involves depositing one or more passivating layers over the diamond film wherein one of the layers is nitride and the other layer is quartz. The passivation technique is directly applicable to diamond sensor pressure transducers and enable them to operate at temperatures above 800.degree. C. in oxygen environments. The passivation technique also provides an economical and simple method for patterning diamond films.

摘要翻译： 一种钝化金刚石膜的方法，以在氧气氛中基本上防止其在高达800℃的温度下氧化。 该方法包括在金刚石膜上沉积一个或多个钝化层，其中一层是氮化物，另一层是石英。 钝化技术直接适用于金刚石传感器压力传感器，使其能够在氧气环境中高于800℃的温度下工作。 钝化技术还提供了用于图案化金刚石膜的经济且简单的方法。