公开(公告)号：US11532462B2

公开(公告)日：2022-12-20

申请号：US16855126

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Zhou ,  Amit Kumar Bansal ,  Sanjeev Baluja

IPC: H01J37/32 ,  H01L21/67 ,  B08B7/00 ,  H01L21/683 ,  H01L21/687 ,  G03F7/42

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US20220319899A1

公开(公告)日：2022-10-06

申请号：US17845230

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap

IPC: H01L21/683 ,  H01L21/67

Abstract: Substrate supports comprising a top plate positioned on a shaft are described. The top plate including a primary heating element a first depth from the surface of the top plate, a inner zone heating element a second depth from the surface of the top plate and an outer zone heating element a third depth from the surface of the top plate. Substrate support assemblies comprising a plurality of substrate supports and methods of processing a substrate are also disclosed.

公开(公告)号：US11430686B2

公开(公告)日：2022-08-30

申请号：US17066971

申请日：2020-10-09

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap

IPC: H01T23/00 ,  H01L21/683 ,  H01L21/67

Abstract: Substrate supports comprising a top plate positioned on a shaft are described. The top plate including a primary heating element a first depth from the surface of the top plate, a inner zone heating element a second depth from the surface of the top plate and an outer zone heating element a third depth from the surface of the top plate. Substrate support assemblies comprising a plurality of substrate supports and methods of processing a substrate are also disclosed.

公开(公告)号：US20220071037A1

公开(公告)日：2022-03-03

申请号：US17009652

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Uday Pai ,  Timothy J. Roggenbuck ,  Sanjeev Baluja ,  Kalesh Panchaxari Karadi ,  Tejas Ulavi

IPC: H05K5/02 ,  C23C16/455 ,  C23C16/458 ,  H02G3/04

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：US11107704B2

公开(公告)日：2021-08-31

申请号：US16519586

申请日：2019-07-23

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Thuy Britcher ,  Amit Kumar Bansal

IPC: H01L21/02 ,  H01L21/67 ,  G05D7/06

Abstract: A substrate processing system includes a processing chamber that includes a substrate support positioned therein. The substrate processing system includes a valve system fluidly coupled to the processing chamber and configured to control flow of gas into the processing chamber. The valve system includes a primary flow line and a first gas source flow line fluidly coupled to the primary flow line through a first gas source valve. The valve system includes a second gas source flow line fluidly coupled to the primary flow line through a second gas source valve. The first gas source valve and the second gas source valve are positioned in series within the primary flow line.

公开(公告)号：US20210087689A1

公开(公告)日：2021-03-25

申请号：US17024946

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Ashutosh Agarwal ,  Tejas Ulavi ,  Sanjeev Baluja

IPC: C23C16/52 ,  H01L21/67 ,  H01L21/687 ,  C23C16/458

Abstract: Process chambers and methods for leveling a motor shaft and substrate support plane are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A first plurality of sensors is arranged at about the same radial distance from the rotational axis and at different angular positions relative to the rotational axis and a second plurality of sensors are arranged to measure the support plane. An angle-dependent motor leveling profile is determined and shim values for the motor bolts are determined to level the motor shaft. The support plane is measured using the second plurality of sensors to level the support plane perpendicular to the motor shaft.

公开(公告)号：US20210086239A1

公开(公告)日：2021-03-25

申请号：US17024955

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Arkaprava Dan ,  Sanjeev Baluja ,  Wei V. Tang

IPC: B08B7/00

Abstract: Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

公开(公告)号：US10910243B2

公开(公告)日：2021-02-02

申请号：US16555764

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Dhritiman Subha Kashyap ,  Sanjeev Baluja

IPC: H01L21/67 ,  F28F3/14 ,  F28F27/02 ,  G01K13/02 ,  G01K7/02

Abstract: A thermal management system comprising a fluid channel with a plurality of parallel first flow paths extending along a first level in a first thermal mass and a plurality of parallel second flow paths extending along a second level in a second thermal mass are described. Methods for controlling the temperature of a substrate or heater surface and fluid manifolds are also described.