公开(公告)号：US11276569B2

公开(公告)日：2022-03-15

申请号：US16515230

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Tza-Jing Gung ,  Masaki Ogata ,  Yusheng Zhou ,  Xinhai Han ,  Deenesh Padhi ,  Juan Carlos Rocha ,  Amit Kumar Bansal ,  Mukund Srinivasan

IPC: H01L21/02

Abstract: Embodiments described herein relate to manufacturing layer stacks of oxide/nitride (ON) layers with minimized in-plane distortion (IPD) and lithographic overlay errors. A method of forming a layer stack ON layers includes flowing a first silicon-containing gas, an oxygen-containing gas, and a first dilution gas. A RF power is symmetrically applied to form a first material layer of SiO2. A second silicon-containing gas, a nitrogen-containing gas, and a second dilution gas are flowed. A second RF power is symmetrically applied to form a second material layer of Si3N4. The flowing the first silicon-containing gas, the oxygen-containing gas, and the first dilution gas, the symmetrically applying the first RF power, the flowing the second silicon-containing gas, the nitrogen-containing gas, and the second dilution gas, and the symmetrically applying the second RF power is repeated until a desired number of first material layers and second material layers make up a layer stack.

公开(公告)号：US12087555B2

公开(公告)日：2024-09-10

申请号：US18083301

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Zhou ,  Amit Kumar Bansal ,  Sanjeev Baluja

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  G03F7/42

CPC classification number: H01J37/32495 ,  H01J37/32862 ,  H01L21/67017 ,  B08B7/0021 ,  G03F7/427 ,  H01J37/32834 ,  H01L21/67028 ,  H01L21/6831 ,  H01L21/68742

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

公开(公告)号：US11532462B2

公开(公告)日：2022-12-20

申请号：US16855126

申请日：2020-04-22

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Shailendra Srivastava ,  Tejas Ulavi ,  Yusheng Zhou ,  Amit Kumar Bansal ,  Sanjeev Baluja

IPC: H01J37/32 ,  H01L21/67 ,  B08B7/00 ,  H01L21/683 ,  H01L21/687 ,  G03F7/42

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.