公开(公告)号：US11480866B2

公开(公告)日：2022-10-25

申请号：US17122065

申请日：2020-12-15

Applicant: Applied Materials, Inc.

Inventor： Herng Yau Yoong ,  Wen Xiao ,  Ribhu Gautam ,  Sanjay Bhat ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/60 ,  G03F1/44

Abstract: Apparatus and methods to improve centroid wavelength uniformity of EUV mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank. Selected regions and sub regions of the EUV mask blank are selectively heated, resulting in improved centroid wavelength uniformity of EUV mask blanks.

公开(公告)号：US11467499B2

公开(公告)日：2022-10-11

申请号：US16893538

申请日：2020-06-05

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Huajun Liu ,  Herng Yau Yoong

IPC: G01N21/41 ,  G03F7/20 ,  G03F1/22 ,  G03F1/54 ,  G03F1/26 ,  G01J1/42 ,  G01N21/33

Abstract: Apparatus, methods and are disclosed for measuring refractive index of an absorber material used in EUV phase shift masks. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of EUV wavelengths and thickness values for the absorber material to determine the refractive index of the absorber material.

公开(公告)号：US11422096B2

公开(公告)日：2022-08-23

申请号：US17106555

申请日：2020-11-30

Applicant: Applied Materials, Inc.

Inventor： Weimin Li ,  Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

IPC: G01N21/956 ,  G03F1/24 ,  G03F7/20

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

公开(公告)号：US11385536B2

公开(公告)日：2022-07-12

申请号：US16944556

申请日：2020-07-31

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal

IPC: G03F1/24

Abstract: An extreme ultraviolet reflective element comprising a multilayer stack of absorber layers on a multilayer stack of reflective layers. The element comprises spacing layer and phase tuning layer. Methods of manufacturing extreme ultraviolet reflective elements and lithography systems including extreme ultraviolet reflective elements are also described.

公开(公告)号：US20220107558A1

公开(公告)日：2022-04-07

申请号：US17552513

申请日：2021-12-16

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Wen Xiao ,  Sanjay Bhat

IPC: G03F1/24

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

公开(公告)号：US11237473B2

公开(公告)日：2022-02-01

申请号：US16801642

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Wen Xiao ,  Sanjay Bhat

IPC: G03F1/24

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

公开(公告)号：US20210333703A1

公开(公告)日：2021-10-28

申请号：US17234996

申请日：2021-04-20

Applicant: Applied Materials, Inc

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：US20200333700A1

公开(公告)日：2020-10-22

申请号：US16850665

申请日：2020-04-16

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G03F7/20 ,  G02B5/08

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US20200277698A1

公开(公告)日：2020-09-03

申请号：US16801642

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Wen Xiao ,  Sanjay Bhat

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/04 ,  C23C14/16 ,  H01L21/02

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

公开(公告)号：US20200241409A1

公开(公告)日：2020-07-30

申请号：US16750586

申请日：2020-01-23

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Sanjay Bhat ,  Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/22 ,  C23C14/34 ,  H01J37/34

Abstract: Physical vapor deposition target assemblies, PVD chambers including target assemblies and methods of manufacturing EUV mask blanks using such target assemblies are disclosed. The target assembly includes a target shield adjacent the target and surrounding the peripheral edges of the target, the target shield comprising an insulating material and a non-insulating outer peripheral fixture to secure the target shield to the assembly.