-
公开(公告)号:US11480866B2
公开(公告)日:2022-10-25
申请号:US17122065
申请日:2020-12-15
发明人: Herng Yau Yoong , Wen Xiao , Ribhu Gautam , Sanjay Bhat , Vibhu Jindal
摘要: Apparatus and methods to improve centroid wavelength uniformity of EUV mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank. Selected regions and sub regions of the EUV mask blank are selectively heated, resulting in improved centroid wavelength uniformity of EUV mask blanks.
-
公开(公告)号:US11670525B2
公开(公告)日:2023-06-06
申请号:US16363537
申请日:2019-03-25
CPC分类号: H01L21/67115 , H05B6/6408 , H05B6/76
摘要: Methods and apparatus for reducing leakage of microwaves at a slit valve of a process chamber. A multi-frequency resonant choke around the slit valve prevents microwave energy from a band of frequencies from escaping from the slit valve. The multi-frequency resonant choke may have a sloping bottom surface or a serrated bottom surface to enable multiple frequencies to resonant in the choke, canceling a range of microwave frequencies at gaps formed by a slit valve gate.
-
公开(公告)号:US11361981B2
公开(公告)日:2022-06-14
申请号:US16198417
申请日:2018-11-21
IPC分类号: H01L21/677 , C23C16/458 , H01L21/68 , H01L21/673
摘要: Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.
-
公开(公告)号:US11699634B2
公开(公告)日:2023-07-11
申请号:US16460979
申请日:2019-07-02
IPC分类号: H01L23/473 , F28F3/12 , H01L23/36 , H01L23/367 , H01L23/46
CPC分类号: H01L23/473 , F28F3/12 , H01L23/36 , H01L23/367 , H01L23/46 , F28F2210/10
摘要: Methods and apparatus for a cooling plate for solid state power amplifiers are provided herein. In some embodiments, a cooling plate of a solid state power amplifier includes a body having a rectangular shape, a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall; a plurality of holes disposed on a first side of the body configured to mount a plurality of heat generating microelectronic components; and a channel having a plurality of segments disposed within the body and extending from a first port disposed on the first sidewall to a second port disposed on the first sidewall.
-
公开(公告)号:US20210233790A1
公开(公告)日:2021-07-29
申请号:US17227442
申请日:2021-04-12
IPC分类号: H01L21/677 , C23C16/458 , H01L21/68 , H01L21/673
摘要: Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.
-
公开(公告)号:US20190341286A1
公开(公告)日:2019-11-07
申请号:US16198417
申请日:2018-11-21
IPC分类号: H01L21/677 , H01L21/673 , H01L21/68 , C23C16/458
摘要: Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.
-
公开(公告)号:US11784075B2
公开(公告)日:2023-10-10
申请号:US17227442
申请日:2021-04-12
IPC分类号: H01L21/67 , H01L21/677 , C23C16/458 , H01L21/68 , H01L21/673
CPC分类号: H01L21/67757 , C23C16/4583 , H01L21/67346 , H01L21/68
摘要: Methods and apparatus for supporting substrates are provided herein. In some embodiments, a substrate support for supporting a plurality of substrates includes: a plurality of substrate support elements having a ring shape configured to support a plurality of substrates in a vertically spaced apart relation; and a plurality of substrate lift elements interfacing with the plurality of substrate support elements and configured to simultaneously selectively raise or lower substrates off of or onto respective substrate support elements.
-
公开(公告)号:US11629409B2
公开(公告)日:2023-04-18
申请号:US16424302
申请日:2019-05-28
发明人: Ribhu Gautam , Ananthkrishna Jupudi , Tuck Foong Koh , Preetham P. Rao , Vinodh Ramachandran , Yueh Sheng Ow , Yuichi Wada , Cheng-Hsiung Tsai , Kai Liang Liew
IPC分类号: C23C16/511 , B01J19/12 , C23C16/54 , H05B6/64 , H01J37/32
摘要: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.
-
公开(公告)号:US20220189749A1
公开(公告)日:2022-06-16
申请号:US17120721
申请日:2020-12-14
发明人: Ribhu Gautam , Vibhu Jindal , Kamatchi Gobinath Manoharan , Sanjay Bhat , Praveen Kumar Choragudi , Wen Xiao , Vinodh Ramachandran
摘要: An ex situ physical vapor deposition (PVD) process kit conditioning apparatus configured to condition process kit components of a PVD substrate processing chamber, the ex situ PVD process kit conditioning apparatus comprising a chamber assembly, a central cathode assembly configured to mount one or more targets. The apparatus is configured to receive one or more components of a process kit of a PVD substrate processing chamber and the central cathode assembly is positioned and configured so that the apparatus deposits the defect reduction coating substantially uniformly on an inner surface of a process kit component of the PVD substrate processing chamber.
-
10.
公开(公告)号:US10950475B1
公开(公告)日:2021-03-16
申请号:US16545537
申请日:2019-08-20
发明人: Vinodh Ramachandran , Ananthkrishna Jupudi , Cheng-Hsiung Tsai , Yueh Sheng Ow , Preetham P. Rao , Ribhu Gautam , Prashant Agarwal
IPC分类号: H01L21/67 , H01L21/324 , H05B6/64 , H01L21/66 , G01J5/10
摘要: Methods and apparatus for processing a substrate are provided. The apparatus, for example, can include a process chamber comprising a chamber body defining a processing volume and having a view port coupled to the chamber body; a substrate support disposed within the processing volume and having a support surface to support a substrate; and an infrared temperature sensor (IRTS) disposed outside the chamber body adjacent the view port to measure a temperature of the substrate when being processed in the processing volume, the IRTS movable relative to the view port for scanning the substrate through the view port.
-
-
-
-
-
-
-
-
-