Process for producing sintered ferrous alloys
    31.
    发明授权
    Process for producing sintered ferrous alloys 失效
    生产烧结铁合金的方法

    公开(公告)号:US4614638A

    公开(公告)日:1986-09-30

    申请号:US805413

    申请日:1985-12-06

    摘要: A method for producing a sintered ferrous alloy containing at least one alloying element whose standard free energy for oxide formation at 1,000.degree. C. is 11,000 cal/g mol O.sub.2 or less is described. The method comprises a sintering procedure comprising steps of elevating the temperature of a green compact comprising said at least one alloying element, sintering it in a sintering furnace and cooling it, wherein the pressure in the sintering furnace is maintained at between about 0.2 and 500 Torr by supplying a reducing gas during at least a part of the sintering procedure under reduced pressure.

    摘要翻译: 描述了一种含有至少一种合金元素的烧结铁合金的制造方法,其中在1000℃下形成氧化物的标准自由能为11000cal / g molO 2以下。 该方法包括一个包括以下步骤的烧结步骤:提高包含所述至少一种合金元素的生坯的温度,在烧结炉中烧结并冷却,其中烧结炉中的压力保持在约0.2和500托之间 通过在至少一部分烧结过程中在减压下供应还原气体。

    Sintered body for use in a cutting tool and the method for producing the
same
    34.
    发明授权
    Sintered body for use in a cutting tool and the method for producing the same 失效
    用于切削工具的烧结体及其制造方法

    公开(公告)号:US4293618A

    公开(公告)日:1981-10-06

    申请号:US36989

    申请日:1979-05-07

    申请人: Akio Hara Shuji Yazu

    发明人: Akio Hara Shuji Yazu

    摘要: The invention relates to a sintered body for use in a cutting tool comprising a cutting edge forming part having particularly high hardness and wear resistance bonded to a supporting member having high plastic deformability, stiffness, transverse rupture strength, thermal conductivity, thermal expansion coefficient, resistance to corrosion, oxidization and the like, and to a method for producing the same. A diamond powder or high pressure form boron nitride powder is placed in contact with preliminarily sintered cermet constituted by carbide crystals chiefly comprising molybdenum in the form of (Mo, W)C bonded by iron group metals, the combined body being sintered at a temperature and pressure under which the diamond powder or high pressure form boron nitride powder is thermodynamically stable so that the sintered body of the diamond or high pressure form boron nitride is bonded to the cermet thereby enabling to obtain a sintered body having the said high properties for use in a cutting tool.

    摘要翻译: 本发明涉及一种用于切削刀具的烧结体,其包括具有特别高的硬度和耐磨性的切削刃形成部分,其结合到具有高塑性变形性,刚度,横向断裂强度,导热性,热膨胀系数,电阻 腐蚀,氧化等,以及其制造方法。 将金刚石粉末或高压氮化硼粉末与由主要包含以铁族金属键合的(Mo,W)C形式的钼的碳化物晶体构成的预先烧结的金属陶瓷接触,该组合体在一定温度下烧结, 金刚石粉末或高压形成氮化硼粉末的压力是热力学稳定的,使得金刚石或高压的烧结体形成氮化硼结合到金属陶瓷上,从而能够获得具有上述高性能的烧结体,用于 一个切割工具

    Hard alloy containing molybdenum and tungsten
    35.
    发明授权
    Hard alloy containing molybdenum and tungsten 失效
    含钼和钨的硬质合金

    公开(公告)号:US4265662A

    公开(公告)日:1981-05-05

    申请号:US971835

    申请日:1978-12-19

    IPC分类号: C22C29/00 B22F3/00

    CPC分类号: C22C29/00

    摘要: This invention relates to a hard alloy comprising a hard phase consisting of at least one compound having a crystal structure of simple hexagonal MC type (M: metal; C: carbon) selected from the group consisting of mixed carbides, carbonitrides and carboxynitrides of molybdenum and tungsten as a predominant component, and a binder phase consisting of at least one element selected from the group consisting of iron, cobalt, nickel and chromium, in which a hard phase consisting of a compound of M.sub.2 C type having a crystal structure of hexagonal type is evenly dispersed.

    摘要翻译: 本发明涉及一种硬质合金,其包含由至少一种具有简单的六方晶系MC型(M:金属; C:碳)的晶体结构的化合物组成的硬质合金,所述晶体结构选自由混合碳化物,碳氮化物和钼的羧基氮化物组成的组, 钨作为主要组分,以及由选自铁,钴,镍和铬中的至少一种元素组成的粘结相,其中由具有六方晶系结构的M2C型化合物组成的硬相为 均匀分散。

    Diamond/sintered carbide cutting tool
    36.
    发明授权
    Diamond/sintered carbide cutting tool 失效
    钻石/烧结硬质合金刀具

    公开(公告)号:US4171973A

    公开(公告)日:1979-10-23

    申请号:US902812

    申请日:1978-05-04

    申请人: Akio Hara Shuji Yazu

    发明人: Akio Hara Shuji Yazu

    摘要: A sintered compact for use in a cutting tool and a method of producing the same are disclosed. The compact comprises 95 to 20 volume % of diamond finer than one micron in size and the balance binder also finer than one micron selected from the group of WC, (MoW)C, WC base cemented carbide and (MoW)C base cemented carbide.The method comprises pulverizing a diamond powder by using cemented carbide balls and a pot having a cemented carbide lining, mixing the diamond powder with a powder abraded from the balls and pot to produce a powder mix finer than one micron containing 95 to 20 volume % of diamond, heat-treating the powder mix in vacuum so as to degas, and hot-pressing the powder mix under high pressure at high temperature within the stable range of diamond.

    摘要翻译: 公开了一种用于切削工具的烧结体及其制造方法。 该压块包括比体积小于1微米的金刚石的95至20体积%,并且平衡粘结剂还比选自WC,(MoW)C,WC基硬质合金和(MoW)C基硬质合金的一微米更细。

    Cemented carbonitride alloys containing tantalum
    37.
    发明授权
    Cemented carbonitride alloys containing tantalum 失效
    含钽的水泥碳氮化合物

    公开(公告)号:US4120719A

    公开(公告)日:1978-10-17

    申请号:US747689

    申请日:1976-12-06

    IPC分类号: C22C29/04 B22F3/00 C22C29/00

    CPC分类号: C22C29/04

    摘要: The present invention relates to a hard cemented carbonitride alloy for cutting tools, which comprises 97 to 75% by weight of a hard phase and 3 to 25% by weight of a binder metal, the hard phase consisting of metallic components of titanium as a main component, 5 to 40% by weight of one or more of tungsten and molybdenum and 3 to 40% by weight of tantalum and non-metallic components of carbon and nitrogen, the proportion of nitrogen being 5 to 40% by weight of the non-metallic components and the binder metal being at least one element selected from the group consisting of iron, cobalt and nickel.

    摘要翻译: 本发明涉及一种用于切割工具的硬质粘结碳氮化物合金,其包含97-75重量%的硬质相和3-25重量%的粘合剂金属,硬相由钛的金属组分作为主要 5至40重量%的钨和钼中的一种或多种,​​3至40重量%的钽和碳和氮的非金属组分,氮的比例为5至40重量% 金属组分和粘合剂金属是选自铁,钴和镍中的至少一种元素。

    Method of making surface-coated cemented carbide articles
    38.
    发明授权
    Method of making surface-coated cemented carbide articles 失效
    制作表面硬质合金制品的方法

    公开(公告)号:US3932231A

    公开(公告)日:1976-01-13

    申请号:US119134

    申请日:1971-02-26

    申请人: Akio Hara Shuji Yazu

    发明人: Akio Hara Shuji Yazu

    IPC分类号: C25D13/02

    CPC分类号: C25D13/02 Y10T83/97

    摘要: Surface-coated cemented carbide articles, in particular, cutting tools very excellent in wear resistance and heat resistance are made by an improved method according to the invention. This improved method comprises providing a 3-50 % by weight dispersion of fine powders of 20 microns or less containing 50 % or more of titanium carbide in a liquid consisting mainly of an organic solvent, applying a DC voltage of 10-500 volts to the surface of tungsten carbide base cemented carbides containing 4-30 % of a binder metal in said dispersion to thus cause electrophoretic deposition of the fine powders thereon, heating the coated surface at a temperature of 1260-1550 .degree.C in vacuum or in a reducing or inert atmosphere and thereby forming a coating layer consisting mainly of titanium carbide of 100 microns or less on the surface of the cemented carbides.

    摘要翻译: 表面涂层的硬质合金制品,特别是通过根据本发明的改进方法制成的耐磨性和耐热性非常优异的切削工具。 该改进的方法包括在主要由有机溶剂组成的液体中提供含有50%或更多的碳化钛的20微米或更小的20微米或更小的细粉末的3-50重量%分散体,将10-500伏的直流电压施加到 在所述分散体中含有4-30%的粘合剂金属的碳化钨基硬质合金表面,从而使其上的细粉末电泳沉积,在真空中或在还原或加热下在1260-1550℃的温度下加热涂覆的表面 从而形成主要由硬质合金表面的100微米或更小的碳化钛组成的涂层。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT CHIP
    40.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT CHIP 审中-公开
    半导体器件及制造半导体集成电路芯片的方法

    公开(公告)号:US20100133659A1

    公开(公告)日:2010-06-03

    申请号:US12578901

    申请日:2009-10-14

    IPC分类号: H01L23/544 H01L21/78

    摘要: A semiconductor device including a plurality of circuit regions formed in a semiconductor substrate and a scribe region formed around the circuit regions for separating the respective circuit regions, the scribe region having a plurality of laminated interlayer films including a plurality of metal films and an optically-transparent insulation film formed between and on the plurality of metal films, wherein a first metal film included in a first upper interlayer film of the plurality of interlayer films is positionally offset in a vertical direction to a second metal film included in a second lower interlayer film under the first interlayer film.

    摘要翻译: 一种半导体器件,包括形成在半导体衬底中的多个电路区域和形成在用于分离各个电路区域的电路区域周围的划线区域,划线区域具有多个层叠的夹层膜,其包括多个金属膜和光学 - 在多个金属膜之间形成透明绝缘膜,其中包括在所述多个中间膜中的第一上层间膜中的第一金属膜在与第二下层间膜中包括的第二金属膜垂直方向上位置偏移 在第一层间膜下。