PHASE MODULATION SURFACE UNIT, PHASE MODULATION SURFACE STRUCTURE, AND TERMINAL DEVICE

    公开(公告)号:US20240396499A1

    公开(公告)日:2024-11-28

    申请号:US18693671

    申请日:2022-08-23

    Abstract: Disclosed are a phase modulation surface unit, a phase modulation surface structure, and a terminal device. The phase modulation surface unit includes at least two phase-shifting layers which are stacked, where the phase-shifting layers each include: a first substrate; a second substrate; the first phase-shifting surface layer including at least one first electrode pattern extending in a first direction; the second phase-shifting surface layer including at least one second electrode pattern extending in a second direction and has one-to-one correspondence to the first electrode pattern, and the orthographic projection of the second electrode pattern on the first substrate intersecting with that of the corresponding first electrode pattern on the first substrate; and an tunable dielectric layer between the first phase-shifting surface layer and the second phase-shifting surface layer.

    PHASE SHIFTER AND ELECTRONIC DEVICE
    34.
    发明公开

    公开(公告)号:US20240297427A1

    公开(公告)日:2024-09-05

    申请号:US18028021

    申请日:2022-05-27

    CPC classification number: H01P1/18 H01Q1/22

    Abstract: A phase shifter and an electronic device are provided and belong to the field of communication technology. The phase shifter includes opposite first and second substrates; a tunable dielectric layer therebetween. The first substrate includes a first dielectric substrate; first and second transmission lines on a side of the first dielectric substrate close to the tunable dielectric layer; the first transmission line includes a first main line and at least one first branch connected to a side of an extending direction thereof; the second transmission line includes a second main line and at least one second branch connected to a side of an extending direction thereof; the first and second main lines are arranged side by side with a first gap therebetween. The second substrate includes a second dielectric substrate and a first electrode layer on a side of the second dielectric substrate close to the tunable dielectric layer.

    PHASE SHIFTER AND ANTENNA
    35.
    发明公开

    公开(公告)号:US20240275009A1

    公开(公告)日:2024-08-15

    申请号:US18019553

    申请日:2022-01-25

    CPC classification number: H01P1/182 H01Q3/36

    Abstract: A phase shifter includes: a first substrate; a signal electrode, a first reference electrode, and a second reference electrode which are on the first substrate; a first insulating layer covering at least a side of the signal electrode distal to the first substrate; and at least one film-bridge electrode group on a side of the first insulating layer distal to the signal electrode. Each film-bridge electrode group includes film-bridge electrodes insulated from each other, and an orthogonal projection of the signal electrode on the first substrate is between orthogonal projections of the first and second reference electrodes on the first substrate. An orthogonal projection of a bridge floor of each film-bridge electrode on the first substrate partially overlaps the orthogonal projection of the signal electrode. Distances between bridge floors of the film-bridge electrodes in a same film-bridge electrode group and the signal electrode are different from each other.

    PHASE SHIFTER, ANTENNA AND ELECTRONIC DEVICE
    36.
    发明公开

    公开(公告)号:US20240275008A1

    公开(公告)日:2024-08-15

    申请号:US18018925

    申请日:2022-02-21

    Inventor: Jia FANG Feng QU

    CPC classification number: H01P1/182 H01Q3/36

    Abstract: The present disclosure provides a phase shifter, an antenna and an electronic device. The phase shifter includes: a first dielectric substrate and a second dielectric substrate arranged opposite to each other, and an adjustable dielectric layer, a first electrode and a second electrode arranged between the first dielectric substrate and the second dielectric substrate, where the first electrode and the second electrode each extend in a first direction, and at least one of the first electrode and the second electrode includes a first sub-electrode and a second sub-electrode; the first sub-electrode is arranged on a side of the first dielectric substrate close to the adjustable dielectric layer, and the second sub-electrode is arranged on a side of the second dielectric substrate close to the adjustable dielectric layer, orthographic projections of the first sub-electrode and the second sub-electrode on the first dielectric substrate are partially overlapped with each other.

    PHASE SHIFTER AND ELECTRONIC DEVICE
    37.
    发明公开

    公开(公告)号:US20240266705A1

    公开(公告)日:2024-08-08

    申请号:US18021592

    申请日:2022-03-28

    CPC classification number: H01P1/182

    Abstract: A phase shifter and an electronic device are provided, and belong to the field of communication technology. The phase shifter includes: a first dielectric substrate; and a first feed structure, a second feed structure and a phase shifting structure. The phase shifting structure includes: a first signal electrode, at least one first reference electrode, a first insulating layer and at least one phase control unit. Each phase control unit is on a side of the first insulating layer away from the first dielectric substrate and includes at least one film bridge; there is a gap between a bridge deck of the film bridge and the first insulating layer; and an orthographic projection of a bridge deck of the film bridge on the first dielectric substrate overlaps with orthographic projections of the first signal electrode and the at least one first reference electrode on the first dielectric substrate.

    METAL MESH ARRAY AND MANUFACTURING METHOD THEREOF, THIN FILM SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240211082A1

    公开(公告)日:2024-06-27

    申请号:US17802121

    申请日:2021-09-18

    Inventor: Kui LIANG Feng QU

    CPC classification number: G06F3/0446 G06F2203/04103 G06F2203/04112

    Abstract: The present disclosure provides a metal mesh array and a manufacturing method thereof, a thin film sensor and a manufacturing method thereof, and belongs to the field of electronic device technology. A method for manufacturing a metal mesh array includes: providing a base substrate; forming a first metal layer on the base substrate as a seed layer; forming a first interlayer dielectric layer on a side of the seed layer away from the base substrate such that the first interlayer dielectric layer includes first groove structures and second groove structures in working areas and arranged in an intersecting manner; and performing an electroplating process on the seed layer to form first metal lines in the first groove structures and second metal lines in the second groove structures. The first metal lines and second metal lines in each working area are arranged in an intersecting manner, thereby forming a metal mesh.

    METAL MESH, THIN FILM SENSOR AND MASK
    40.
    发明公开

    公开(公告)号:US20240195054A1

    公开(公告)日:2024-06-13

    申请号:US17789772

    申请日:2021-06-25

    CPC classification number: H01Q1/38

    Abstract: A metal mesh includes: first metal lines (11) and second metal lines (12) extending in crossed directions. The first metal lines (11) are arranged side by side in a first direction and extend in a second direction; the second metal lines (12) are arranged side by side in the first direction and extend in a third direction. Each first metal line (11) includes first sub-line segments sequentially connected together in the second direction, and each second metal line (12) includes second sub-line segments sequentially connected together in the third direction. Each first sub-line segment has a midpoint superposing with a midpoint of one of the second sub-line segments, the first and second sub-line segments having superposed midpoints form a crossed structure (10), and define two opposite first angles (θ1) and two opposite second angles (θ2). Each first angle (θ1) is not greater than each second angle (θ1).

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