公开(公告)号：US11239259B2

公开(公告)日：2022-02-01

申请号：US16649854

申请日：2019-10-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hongda Sun ,  Fengjuan Liu ,  Dini Xie ,  Pengfei Gu

IPC: H01L27/12 ,  H01L23/552 ,  H01L29/786

Abstract: The present disclosure provides a substrate, a manufacturing method thereof, and a transparent display device. The substrate comprising: a plurality of pixel units, at least a part of which includes a light-emitting area and a transparent area, and the light-emitting area includes a thin-film transistor; a light blocking member disposed in the light-emitting area and configured to block light that is directed to the thin-film transistor through the transparent area.

公开(公告)号：US20210249487A1

公开(公告)日：2021-08-12

申请号：US17052575

申请日：2020-04-01

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hongda Sun ,  Qing Dai ,  Fengjuan Liu

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: The present disclosure provides a substrate comprising a printing area, wherein the printing area comprises a flat surface and a plurality of separation structures projecting from the flat surface, wherein the plurality of separation structures divide the printing area into a plurality of micro-areas, and in each of the micro-areas, a circular region containing no separation structure has a maximum diameter between 5 μm and 10 μm. The present disclosure further provides a light emitting device comprising the substrate and a method for manufacturing the substrate.

公开(公告)号：US11075288B2

公开(公告)日：2021-07-27

申请号：US16325981

申请日：2018-04-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guoying Wang ,  Hongda Sun ,  Zhen Song

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L29/45 ,  H01L21/027 ,  H01L21/44 ,  H01L21/033

Abstract: A thin film transistor is provided and includes an active layer, a source electrode, a drain electrode, a gate electrode and a gate electrode insulating layer, the active layer includes a source electrode region, a drain electrode region and a channel region, the source electrode region and the drain electrode region include a first metal material, and the channel region includes a semiconductor material made from oxidation of the first metal material.

公开(公告)号：US20210225950A1

公开(公告)日：2021-07-22

申请号：US16753449

申请日：2019-08-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hongda Sun ,  Youngsuk Song ,  Wei Liu ,  Jainye Zhang ,  Fengjuan Liu

IPC: H01L27/32 ,  G02F1/1362

Abstract: A substantially transparent display substrate is provided. The substantially transparent display substrate includes a base substrate; multiple insulating layers on the base substrate and in a display area of the substantially transparent display substrate; and a plurality of grooves in at least a first insulating layer of the multiple insulating layers, wherein at least one of the plurality of grooves at least partially extending into the first insulating layer. The display area includes a plurality of subpixel regions spaced apart from each other by an inter-subpixel region. A respective one of the plurality of subpixel regions includes a light emitting sub-region and a substantially transparent sub-region. At least a portion of a respective one of the plurality of grooves is about an edge of the substantially transparent sub-region of the respective one of the plurality of subpixel regions.

公开(公告)号：US10177204B2

公开(公告)日：2019-01-08

申请号：US15235458

申请日：2016-08-12

Applicant: BOE Technology Group Co., Ltd.

Inventor： Wei Li ,  Youngsuk Song ,  Jingang Fang ,  Hongda Sun

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A method for manufacturing a display substrate, a display substrate and a display device are disclosed. The method includes: forming a thin-film transistor (TFT) array on a base substrate to form an array substrate; and forming a pixel define layer (PDL) on a non-pixel region of the array substrate by a patterning process. A photochromic material is uniformly distributed in the PDL; the PDL provided with the photochromic material can be converted from light-transmitting to light-shielding under action of light illumination; and the process that the PDL is converted from light-transmitting to light-shielding is irreversible.

公开(公告)号：US09978995B2

公开(公告)日：2018-05-22

申请号：US15306886

申请日：2016-03-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jingang Fang ,  Wulin Shen ,  Hongda Sun ,  Chun I Lin

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/00

CPC classification number: H01L51/5284 ,  H01L27/322 ,  H01L51/0004 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/56

Abstract: A display substrate having a black matrix with a curved surface, a method for manufacturing the same and a display device are provided. The display substrate includes a black matrix disposed between adjacent pixels, wherein a sidewall of the black matrix is a concave curved surface. During the formation of a color film, since the sidewall of the black matrix is formed as a concave curved surface, color film droplets in one sub-pixel may return into the sub-pixel along the curved surface while splashing to the sidewall of the black matrix, thereby the contamination to adjacent pixels caused by the droplets splashing may be avoided, and a yield of the substrate may be ensured.

公开(公告)号：US20180108781A1

公开(公告)日：2018-04-19

申请号：US15504030

申请日：2016-08-16

Applicant: Boe Technology Group Co., Ltd.

Inventor： Jingang Fang ,  Youngsuk Song ,  Hongda Sun ,  Wei Li

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L29/78627 ,  H01L27/1214 ,  H01L27/32 ,  H01L27/3246 ,  H01L27/3276 ,  H01L27/3295 ,  H01L51/0011 ,  H01L51/0017 ,  H01L51/56

Abstract: A light emitting diode display substrate, a method of manufacturing the same, and a display device are provided. The method includes: forming a planarization layer and a photoresist layer in sequence on a substrate on which a thin film transistor is formed, a light sensitivity of the planarization layer being higher than a light sensitivity of the photoresist layer; etching the planarization layer and the photoresist layer simultaneously, such that a pixel defining pattern is formed through a removed portion of the photoresist layer, and an anode via pattern is formed at a position of the planarization layer corresponding to the pixel defining pattern; forming an anode pattern layer on the substrate on which the above steps were performed, wherein the anode pattern layer comprises a plurality of anodes, such that the planarization layer located at edges of the anode via pattern covers edges of the anodes.

公开(公告)号：US09893323B2

公开(公告)日：2018-02-13

申请号：US15208446

申请日：2016-07-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei Gu ,  Fengjuan Liu ,  Hongda Sun

IPC: H01L51/56 ,  H01L51/50 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L51/56 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5206 ,  H01L2251/303

Abstract: A method for preparing an OLED and an OLED device are provided. The method for preparing an OLED comprises forming an anode metal layer on an organic layer; forming an inorganic layer on the anode metal layer; and forming the anode metal layer into an anode layer comprising a pattern of an anode.

公开(公告)号：US09508755B2

公开(公告)日：2016-11-29

申请号：US14361700

申请日：2013-11-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangyong Kong ,  Dongfang Wang ,  Jun Cheng ,  Hongda Sun

IPC: H01L27/12 ,  G02F1/1362

CPC classification number: H01L27/1248 ,  G02F1/136227 ,  H01L27/1244 ,  H01L27/1288

Abstract: The present invention provides a pixel unit including a thin film transistor and a pixel electrode, the thin film transistor includes a gate, a source and a drain, and the pixel electrode is electrically connected to the drain through a via hole. An upper end surface of the via hole is connected to the pixel electrode, and a lower end surface of the via hole is connected to the drain. The via hole is a step-shaped hole, and an area of the upper end surface of the via hole is larger than that of the lower end surface of the via hole. The present invention also provides a method of fabricating the pixel unit, an array substrate including the pixel unit, and a display device including the array substrate.

Abstract translation: 本发明提供一种包括薄膜晶体管和像素电极的像素单元，薄膜晶体管包括栅极，源极和漏极，并且像素电极通过通孔电连接到漏极。 通孔的上端面与像素电极连接，通孔的下端面与漏极连接。 通孔是台阶状的孔，通孔的上端面的面积大于通孔的下端面的面积。 本发明还提供一种制造像素单元的方法，包括该像素单元的阵列基板以及包括该阵列基板的显示装置。

公开(公告)号：US11984457B2

公开(公告)日：2024-05-14

申请号：US17378576

申请日：2021-07-16

Applicant: BOE Technology Group Co., Ltd.

Inventor： Youngsuk Song ,  Wei Liu ,  Hongda Sun

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1259 ,  H01L29/66742 ,  H01L29/78618

Abstract: A thin-film transistor (TFT) array substrate, a preparation method thereof, and a display device are provided. The TFT array substrate includes a source, a drain, and a first gate; wherein a protrusive structure is defined between the source and the drain, and the first gate is disposed inside the protrusive structure; and in a plane where a surface of the first gate is disposed, a sum of an overlapped area of a projection of the source and a projection of the first gate and an overlapped area of a projection of the drain and the projection of the first gate is less than an area threshold.