公开(公告)号：US06251570B1

公开(公告)日：2001-06-26

申请号：US09604372

申请日：2000-06-27

申请人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bharath Rangarajan ,  Bhanwar Singh

发明人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bharath Rangarajan ,  Bhanwar Singh

IPC分类号： G03F732

CPC分类号： G03F7/32 ,  G03F7/322 ,  G03F7/38

摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure including a resist thereon, involving the steps of exposing the semiconductor structure including the resist to acting radiation; contacting the semiconductor structure including the exposed resist with a solution comprising water and from about 0.01% to about 5% by weight of a surfactant; and developing the resist with a developer.

摘要翻译： 在一个实施例中，本发明涉及一种处理包括其上的抗蚀剂的半导体结构的方法，包括将包括抗蚀剂的半导体结构暴露于作用辐射的步骤; 将包含曝光的抗蚀剂的半导体结构与包含水和约0.01重量％至约5重量％的表面活性剂的溶液接触; 并用开发商开发抗蚀剂。

公开(公告)号：US06187666B1

公开(公告)日：2001-02-13

申请号：US09328148

申请日：1999-06-08

申请人： Bhanwar Singh ,  Michael K. Templeton ,  Bharath Rangarajan ,  Christopher F. Lyons ,  Sanjay K. Yedur ,  Ramkumar Subramanian

发明人： Bhanwar Singh ,  Michael K. Templeton ,  Bharath Rangarajan ,  Christopher F. Lyons ,  Sanjay K. Yedur ,  Ramkumar Subramanian

IPC分类号： H01L214763

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76831 ,  H01L2221/1063

摘要： The present invention relates to a method for fabricating interconnecting lines and vias in a layer of insulating material. A via is formed in the layer of insulating material. A protective material is formed so as to be conformal to at least edges and sidewalls of the via, the protective material facilitating shielding of at least the edges and sidewalls of the via from a trench etch step. The trench etch step is performed to form a trench opening in the insulating material. The via and trench are filled with a conductive metal.

摘要翻译： 本发明涉及在绝缘材料层中制造互连线和通孔的方法。 在绝缘材料层中形成通孔。 形成保护材料以至少与通孔的边缘和侧壁共形，所述保护材料有助于屏蔽通孔的至少边缘和侧壁至沟槽蚀刻步骤。 执行沟槽蚀刻步骤以在绝缘材料中形成沟槽开口。 通孔和沟槽填充有导电金属。

公开(公告)号：US6136514A

公开(公告)日：2000-10-24

申请号：US494699

申请日：2000-01-31

申请人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bharath Rangarajan ,  Bhanwar Singh

发明人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bharath Rangarajan ,  Bhanwar Singh

IPC分类号： G03F7/32 ,  G03F7/38

CPC分类号： G03F7/32 ,  G03F7/322 ,  G03F7/38

摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure including a resist thereon, involving the steps of exposing the semiconductor structure including the resist to actinic radiation; contacting the semiconductor structure including the exposed resist with a solution comprising water and from about 0.01% to about 5% by weight of a surfactant; and developing the resist with a developer.

摘要翻译： 在一个实施例中，本发明涉及一种处理包括其上的抗蚀剂的半导体结构的方法，包括将包括抗蚀剂的半导体结构暴露于光化辐射的步骤; 将包含曝光的抗蚀剂的半导体结构与包含水和约0.01重量％至约5重量％的表面活性剂的溶液接触; 并用开发商开发抗蚀剂。

公开(公告)号：US07943289B2

公开(公告)日：2011-05-17

申请号：US11087011

申请日：2005-03-22

申请人： Bharath Rangarajan ,  Michael K. Templeton ,  Ramkumar Subramanian

发明人： Bharath Rangarajan ,  Michael K. Templeton ,  Ramkumar Subramanian

IPC分类号： G03F7/20

CPC分类号： H01L21/0331 ,  G03F7/40 ,  H01L21/0272 ,  H01L21/0274

摘要： The invention provides systems and processes that form the inverse (photographic negative) of a patterned first coating. The patterned first coating is usually provided by a resist. After the first coating is patterned, a coating of a second material is provided thereover. The uppermost layer of the second coating is removed, where appropriate, to expose the patterned first coating. The patterned first coating is subsequently removed, leaving the second coating material in the form of a pattern that is the inverse pattern of the first coating pattern. The process may be repeated with a third coating material to reproduce the pattern of the first coating in a different material. Prior to applying the second coating, the patterned first coating may be trimmed by etching, thereby reducing the feature size and producing sublithographic features. In addition to providing sublithographic features, the invention gives a simple, efficient, and high fidelity method of obtaining inverse coating patterns.

摘要翻译： 本发明提供了形成图案化的第一涂层的逆（照相负）的系统和工艺。 图案化的第一涂层通常由抗蚀剂提供。 在对第一涂层进行图案化之后，在其上提供第二材料的涂层。 在适当的情况下去除第二涂层的最上层以暴露图案化的第一涂层。 随后去除图案化的第一涂层，留下作为第一涂层图案的相反图案的图案形式的第二涂层材料。 可以用第三涂层材料重复该过程，以以不同的材料再现第一涂层的图案。 在施加第二涂层之前，可以通过蚀刻修整图案化的第一涂层，从而减小特征尺寸并产生亚光刻特征。 除了提供亚光刻特征之外，本发明还提供了一种简单，有效和高保真的获得反涂层图案的方法。

公开(公告)号：US07034930B1

公开(公告)日：2006-04-25

申请号：US09634302

申请日：2000-08-08

申请人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan

发明人： Ramkumar Subramanian ,  Khoi A. Phan ,  Bharath Rangarajan

IPC分类号： G01N21/88

CPC分类号： G01N21/9501 ,  G01N21/956

摘要： A measuring system and method are provided for defect identification and location. The system an optical measurement device adapted to view a workpiece along an optical path, and an optical indicia device located in the optical path between the workpiece and the measurement device, which is adapted to provide location information to the system or a user. The location information can be used to correlate defect locations identified in a wafer before and after a process step, as well as between two different wafers. The optical indicia device may further allow the use of field comparison techniques in identifying and locating defects in a blank or unpatterned workpiece. The indicia device may comprise, for example, a transparent member having a grid or other optical indicia patterned thereon, allowing inspection of the workpiece with reference to the optical indicia pattern.

摘要翻译： 提供了一种用于缺陷识别和定位的测量系统和方法。 该系统适于沿着光路观察工件，以及位于工件和测量装置之间的光路中的光学标记装置，其适于向系统或用户提供位置信息。 位置信息可用于将在晶片中识别的缺陷位置与处理步骤之间以及两个不同的晶片之间相关联。 光学标记装置还可以允许使用现场比较技术来识别和定位空白或未图案化的工件中的缺陷。 标记装置可以包括例如具有图案化的网格或其他光学标记的透明构件，允许参考光标记图案检查工件。

公开(公告)号：US06999254B1

公开(公告)日：2006-02-14

申请号：US10967845

申请日：2004-10-18

申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G02B7/00

CPC分类号： G03F7/70341

摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

摘要翻译： 公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。 已知的光栅结构被构建在衬底上。 折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

公开(公告)号：US06809793B1

公开(公告)日：2004-10-26

申请号：US10050456

申请日：2002-01-16

申请人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

发明人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

IPC分类号： G03B2752

CPC分类号： G03F7/70558 ,  G03F7/70875

摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.

摘要翻译： 公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。 一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。 所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

公开(公告)号：US06771374B1

公开(公告)日：2004-08-03

申请号：US10050758

申请日：2002-01-16

申请人： Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

发明人： Bharath Rangarajan ,  Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

IPC分类号： G01N2155

CPC分类号： G01N21/211 ,  G01B11/0675 ,  G01N21/4738 ,  G01N21/9501 ,  Y10T428/21

摘要： A system and method are disclosed for monitoring characteristics of a rotating substrate. As the substrate rotates in an environment, an incident light beam is emitted onto the substrate near an axis about which the substrate rotates. The emission of the incident beam is controlled as a function of the angular orientation of the substrate, so that the incident beam selectively interrogates a central region of the substrate to facilitate measuring and/or inspecting characteristics of the substrate.

摘要翻译： 公开了一种用于监测旋转衬底的特性的系统和方法。 当衬底在环境中旋转时，入射光束在衬底旋转的轴附近被发射到衬底上。 入射光束的发射被控制为衬底的角度取向的函数，使得入射光束选择性地询问衬底的中心区域以便于测量和/或检查衬底的特性。

公开(公告)号：US06562185B2

公开(公告)日：2003-05-13

申请号：US09955552

申请日：2001-09-18

申请人： Steven C. Avanzino ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

发明人： Steven C. Avanzino ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

IPC分类号： B24B3700

CPC分类号： B24B37/015

摘要： A system for characterizing a chemical mechanical polishing process is provided. The system includes a wafer that has a metal, polysilicon, and/or dielectric layer and/or substrate and a temperature sensor located in and/or on the metal, polysilicon and/or dielectric layer and/or substrate. The system also includes a temperature monitoring system that can read the wafer temperature from the temperature sensors and that can analyze the wafer temperature to characterize the chemical mechanical polishing process. Such characterization includes producing information concerning relationships between wafer temperature and polishing rate, polishing uniformity and introduction of defects during polishing. Such relationships are correlated with wafer temperature as related to parameters like polishing time, pressure, speed, slurry properties and wafer/metal layer properties. Such characterization can be employed, for example, to better understand a CMP process, to facilitate initializing subsequent chemical mechanical polishing processes and/or apparatus and/or to control such chemical mechanical polishing processes and/or apparatus by monitoring and/or controlling wafer temperature.

摘要翻译： 提供了表征化学机械抛光工艺的系统。 该系统包括具有位于金属，多晶硅和/或电介质层和/或衬底中和/或上的金属，多晶硅和/或电介质层和/或衬底和温度传感器的晶片。 该系统还包括一个温度监控系统，可以从温度传感器读取晶圆温度，并且可以分析晶圆温度以表征化学机械抛光过程。 这种表征包括产生关于晶片温度和抛光速率之间的关系的信息，抛光均匀性和在抛光期间引入缺陷。 这些关系与晶片温度相关，如与抛光时间，压力，速度，浆料性质和晶片/金属层性质等参数相关。 可以采用这种表征，例如，更好地理解CMP工艺，以便于初始化随后的化学机械抛光工艺和/或设备和/或通过监测和/或控制晶片温度来控制这种化学机械抛光工艺和/或设备 。

公开(公告)号：US06507474B1

公开(公告)日：2003-01-14

申请号：US09597126

申请日：2000-06-19

申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

IPC分类号： H01T2300

CPC分类号： G03F7/70616 ,  G03F7/70941

摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.

摘要翻译： 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。