公开(公告)号：US06922053B2

公开(公告)日：2005-07-26

申请号：US10914017

申请日：2004-08-05

申请人： Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

发明人： Yehiel Gotkis ,  Rodney Kistler ,  Aleksander Owczarz ,  David Hemker ,  Nicolas J. Bright

IPC分类号： H01L21/66 ,  G01B7/06 ,  G01R33/12

CPC分类号： H01L22/26

摘要： A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

公开(公告)号：US20050072528A1

公开(公告)日：2005-04-07

申请号：US10186472

申请日：2002-06-28

申请人： Aleksander Owczarz ,  Yehiel Gotkis ,  David Hemker ,  Rodney Kistler

发明人： Aleksander Owczarz ,  Yehiel Gotkis ,  David Hemker ,  Rodney Kistler

IPC分类号： B24B1/00 ,  B24B37/013 ,  B24B57/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66 ,  C23F1/00

CPC分类号： B24B1/005 ,  B24B37/013 ,  B24B49/105 ,  B24B57/02 ,  H01L21/67253

摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

摘要翻译： 提供了一种用于处理晶片的系统。 该系统包括化学机械平面化（CMP）工具。 CMP工具包括限定在壳体内的晶片载体。 载体膜固定到底表面并支撑晶片。 嵌入晶片载体的传感器。 传感器被配置为在晶片中感应涡流以确定晶片的接近度和厚度。 包括CMP工具外部的一组传感器。 传感器组与嵌入晶片载体中的传感器进行通信，并且基本上消除了距离灵敏度。 传感器簇提供晶片的初始厚度，以允许对嵌入在晶片载体中的传感器执行校准。 校准偏移了在CMP操作期间确定晶片厚度的不准确性的变量。 还提供了一种方法和装置。

公开(公告)号：US20050054268A1

公开(公告)日：2005-03-10

申请号：US10966744

申请日：2004-10-14

申请人： Rodney Kistler ,  David Hemker ,  Yehiel Gotkis ,  Aleksander Owczarz ,  Bruno Morel ,  Damon Williams

发明人： Rodney Kistler ,  David Hemker ,  Yehiel Gotkis ,  Aleksander Owczarz ,  Bruno Morel ,  Damon Williams

IPC分类号： B24B37/005 ,  B24B49/02 ,  B24B49/10 ,  B24B49/14 ,  H01L21/304 ,  H01L21/66 ,  G06F19/00

CPC分类号： B24B37/005 ,  B24B49/10 ,  B24B49/14

摘要： In chemical mechanical polishing, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.

公开(公告)号：US06759336B1

公开(公告)日：2004-07-06

申请号：US10295912

申请日：2002-11-18

申请人： Robert Chebi ,  David Hemker

发明人： Robert Chebi ,  David Hemker

IPC分类号： H01L21311

CPC分类号： H01L21/67115 ,  B08B7/0071 ,  H01L21/67028 ,  H01L21/67103 ,  H01L21/67109 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/14 ,  Y10S438/904 ,  Y10S438/913

摘要： Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove absorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.

摘要翻译： 提供了减少处理后的半导体衬底污染的方法。 该方法包括加热经处理的基底以通过热解吸从基底表面除去吸收的化学物质。 热解吸可以原位或非原位进行。 可以通过对流，传导和/或辐射加热来加热衬底。 也可以通过用惰性等离子体处理处理的基板的表面来加热基板，在惰性等离子体中处理等离子体中的离子轰击衬底表面，提高其温度。 也可以通过在将衬底从处理室传送过程中向衬底施加热能和/或通过将衬底传送到传输模块（例如，装载锁）或第二处理室来进行热解吸， 加热。 通过在衬底表面上吹扫惰性气体可以提高运输过程中的热解吸。

公开(公告)号：US06528427B2

公开(公告)日：2003-03-04

申请号：US09820690

申请日：2001-03-30

申请人： Robert Chebi ,  David Hemker

发明人： Robert Chebi ,  David Hemker

IPC分类号： H01L21311

CPC分类号： H01L21/67115 ,  B08B7/0071 ,  H01L21/67028 ,  H01L21/67103 ,  H01L21/67109 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/14 ,  Y10S438/904 ,  Y10S438/913

摘要： Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove adsorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.