-
公开(公告)号：US07309618B2
公开(公告)日：2007-12-18
申请号：US10463525
申请日：2003-06-18
IPC分类号： H01L21/00
CPC分类号： B24B37/013 , B24B1/005 , B24B49/105 , B24B57/02 , H01L21/67253
摘要： A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.
摘要翻译： 提供半导体处理系统。 半导体处理系统包括：第一传感器，被配置为隔离和测量具有设置在基板上的膜的晶片的膜厚度信号部分。 第二传感器被配置为在处理期间，即在实际工艺条件下和实时地在原位检测膜厚依赖信号。 控制器，被配置为从第一传感器接收信号和来自第二传感器的信号。 控制器能够根据来自第一传感器的信号表示的数据确定校准系数。 控制器能够将校准系数应用于与第二传感器相关联的数据，其中校准系数基本上消除了从衬底引入与膜厚度相关的信号的不准确性。 还提供了用于校准涡流传感器的方法。
-
2.发明授权Method and apparatus for metrological process control implementing complementary sensors 失效用于计量过程控制的实现互补传感器的方法和装置公开(公告)号：US06894491B2
公开(公告)日：2005-05-17
申请号：US10328884
申请日：2002-12-23
CPC分类号： H01L22/26
摘要： A method for detecting a thickness of a layer of a wafer is provided. The method includes defining a particular radius of a wafer carrier configured to engage the wafer to be processed. The method also includes providing a plurality of sensors configured to create a set of complementary sensors. Further included in the method is distributing the plurality of sensors along the particular radius within the wafer carrier such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
摘要翻译： 提供了一种用于检测晶片层的厚度的方法。 该方法包括限定配置成接合要处理的晶片的晶片载体的特定半径。 该方法还包括提供配置成创建一组互补传感器的多个传感器。 该方法还包括沿着晶片载体内的特定半径分布多个传感器，使得多个传感器中的每个传感器与相邻的传感器相位相同角度。 该方法还包括测量由多个传感器产生的信号。 还包括对由多个传感器产生的信号进行平均以产生组合信号。 平均化被配置为从组合信号去除噪声，使得组合信号能够被相关联以识别层的厚度。
-
公开(公告)号：US06808590B1
公开(公告)日：2004-10-26
申请号：US10186932
申请日：2002-06-28
IPC分类号： H01L21302
CPC分类号： G01B7/105 , G01B7/107 , G01B2210/44
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
摘要翻译： 提供了一种用于处理晶片的系统。 该系统包括化学机械平面化（CMP）工具。 CMP工具包括限定在壳体内的晶片载体。 载体膜固定到底表面并支撑晶片。 嵌入晶片载体的传感器。 传感器被配置为在晶片中感应涡流以确定晶片的接近度和厚度。 包括CMP工具外部的传感器阵列。 传感器阵列与嵌入在晶片载体中的传感器连通，并且基本上消除了距离灵敏度。 传感器阵列提供晶片的初始厚度，以允许对嵌入在晶片载体中的传感器进行校准。 校准偏移了在CMP操作期间确定晶片厚度的不准确性的变量。 还提供了一种方法和装置。
-
公开(公告)号：US07084621B2
公开(公告)日：2006-08-01
申请号：US10256055
申请日：2002-09-25
IPC分类号： G01B7/06
CPC分类号： G01B7/105 , G01N27/023
摘要： A method and an apparatus for enhancement of the for measuring resistance-based features of a substrate is provided. The apparatus includes a sensor configured to detect a signal produced by a eddy current generated electromagnetic field. The magnetic field enhancing source is positioned to the alternative side of the object under measurement relative to the sensor to enable the sensitivity enhancing action. The sensitivity enhancing source increases the intensity of the eddy current generated in the object under measurement, and as a result the sensitivity of the sensor. A system enabled to determine a thickness of a layer and a method for determining a resistance-based feature characteristic are also provided.
摘要翻译： 提供了用于增强基板的基于电阻的特征的方法和装置。 该装置包括被配置为检测由涡流产生的电磁场产生的信号的传感器。 磁场增强源相对于传感器定位在测量对象的替代侧，以实现灵敏度增强作用。 灵敏度增强源增加了测量对象中产生的涡流的强度，从而提高了传感器的灵敏度。 还提供了能够确定层的厚度的系统和用于确定基于电阻的特征特征的方法。
-
公开(公告)号：US06951624B2
公开(公告)日：2005-10-04
申请号：US10881094
申请日：2004-06-29
IPC分类号： C23F1/00 , G01B7/06 , G01R27/00 , H01L21/302
CPC分类号： G01B7/105 , G01B7/107 , G01B2210/44
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
摘要翻译： 提供了一种用于处理晶片的系统。 该系统包括化学机械平面化（CMP）工具。 CMP工具包括限定在壳体内的晶片载体。 载体膜固定到底表面并支撑晶片。 嵌入晶片载体的传感器。 传感器被配置为在晶片中感应涡流以确定晶片的接近度和厚度。 包括CMP工具外部的传感器阵列。 传感器阵列与嵌入在晶片载体中的传感器连通，并且基本上消除了距离灵敏度。 传感器阵列提供晶片的初始厚度，以允许对嵌入在晶片载体中的传感器进行校准。 校准偏移了在CMP操作期间确定晶片厚度的不准确性的变量。 还提供了一种方法和装置。
-
6.发明授权公开(公告)号：US06922053B2
公开(公告)日：2005-07-26
申请号：US10914017
申请日：2004-08-05
CPC分类号： H01L22/26
摘要： A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
-
7.发明授权System and method for metal residue detection and mapping within a multi-step sequence 失效多步序列中金属残留检测和映射的系统和方法公开(公告)号：US06929531B2
公开(公告)日：2005-08-16
申请号：US10251033
申请日：2002-09-19
CPC分类号： B24B37/042 , B24B49/02 , B24B49/10 , H01L21/3212 , H01L22/00
摘要： A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.
摘要翻译： 在多步衬底工艺中测量衬底上的金属层的系统和方法包括改变衬底上的金属层，例如形成金属层或去除金属层的至少一部分。 至少一个传感器定位在离基板表面预定距离处。 映射衬底的表面以确定衬底表面上的金属层的均匀性。
-
公开(公告)号：US20050000653A1
公开(公告)日：2005-01-06
申请号：US10881094
申请日：2004-06-29
IPC分类号： C23F1/00 , G01B7/06 , G01R27/00 , H01L21/302
CPC分类号： G01B7/105 , G01B7/107 , G01B2210/44
摘要： A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.
-
9.发明申请Method and apparatus for wafer mechanical stress monitoring and wafer thermal stress monitoring 审中-公开用于晶片机械应力监测和晶片热应力监测的方法和装置公开(公告)号：US20050066739A1
公开(公告)日：2005-03-31
申请号：US10671978
申请日：2003-09-26
CPC分类号： B24B37/015 , B24B49/16
摘要： A chemical mechanical planarization (CMP) system is provided. The CMP system includes a wafer carrier configured to support a wafer during a planarization process, the wafer carrier including a sensor configured to detect a signal indicating a stress being experienced by the wafer during planarization. A computing device in communication with the sensor is included. The computing device is configured to translate the signal to generate a stress map for analysis. A stress relief device responsive to a signal received from the computing device is included. The stress relief device is configured to relieve the stress being experienced by the wafer.
摘要翻译： 提供化学机械平面化（CMP）系统。 CMP系统包括被配置为在平坦化处理期间支撑晶片的晶片载体，晶片载体包括被配置成在平坦化期间检测指示由晶片经历的应力的信号的传感器。 包括与传感器通信的计算设备。 计算设备被配置为平移信号以产生用于分析的应力图。 包括响应于从计算设备接收的信号的应力消除装置。 应力释放装置被构造成减轻晶片经历的应力。
-
10.发明申请公开(公告)号：US20050007107A1
公开(公告)日：2005-01-13
申请号：US10914017
申请日：2004-08-05
CPC分类号： H01L22/26
摘要： A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
摘要翻译： 提供了一种用于检测待处理晶片层的厚度的方法。 该方法包括限定配置成在晶片附近产生一组互补传感器的多个传感器。 该方法中还包括沿着晶片的特定半径分布多个传感器，使得多个传感器中的每个传感器与相邻的传感器相异相同角度。 该方法还包括测量由多个传感器产生的信号。 还包括对由多个传感器产生的信号进行平均以产生组合信号。 平均化被配置为从组合信号去除噪声，使得组合信号能够被相关联以识别层的厚度。
-
-
-
-
-
-
-
-
-
搜索结果
33 条记录 (耗时 0.023 秒)
