公开(公告)号：US07514793B2

公开(公告)日：2009-04-07

申请号：US11633697

申请日：2006-12-04

申请人： Jae-Suk Lee

发明人： Jae-Suk Lee

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76852 ,  H01L21/76834 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10S438/926 ,  H01L2924/00

摘要： Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.

摘要翻译： 公开了半导体器件的金属互连线及其形成方法。 通过防止金属层侵蚀并防止金属线由于电迁移（EM）和应力迁移（SM）而被破坏，在半导体器件的公开的金属线中实现了提高的可靠性。 所示的金属互连线包括：半导体衬底; 衬底上的金属图案; 金属图案下的胶图案; 金属图案上的抗反射图案; 以及围绕金属图案的侧壁的虚拟图案。

公开(公告)号：US07425593B2

公开(公告)日：2008-09-16

申请号：US11485832

申请日：2006-07-13

申请人： Jae-Suk Lee ,  Shahinur Rahman ,  Shashadhar Samal ,  Hee-Soo Yoo

发明人： Jae-Suk Lee ,  Shahinur Rahman ,  Shashadhar Samal ,  Hee-Soo Yoo

IPC分类号： C08G18/04 ,  C08G81/02 ,  G08F4/46

CPC分类号： C08F297/02 ,  C08F297/023

摘要： The present invention relates to an amphiphilic triblock copolymer comprising a poly(2-vinylpyridine) block and a poly(alkylisocyanate) block and the preparation method thereof, and particularly relates to an amphiphilic triblock copolymer comprising a coil-shaped hydrophilic poly(2-vinylpyridine) block and a rod-shaped lipophilic poly(alkylisocyanate) block, having a controlled structure of coil-rod-coil or rod-coil-rod, and the preparation method thereof.

摘要翻译： 本发明涉及包含聚（2-乙烯基吡啶）嵌段和聚（异氰酸烷基酯）嵌段的两亲性三嵌段共聚物及其制备方法，特别涉及包含线圈状亲水性聚（2-乙烯基吡啶）的两亲性三嵌段共聚物 ）嵌段和棒状亲油性聚（烷基异氰酸酯）嵌段及其制备方法及其制备方法。

公开(公告)号：US07327530B2

公开(公告)日：2008-02-05

申请号：US11149303

申请日：2005-06-10

申请人： Jae-Suk Lee ,  Young-rok Oh

发明人： Jae-Suk Lee ,  Young-rok Oh

IPC分类号： G11B33/14

CPC分类号： G11B33/08 ,  G11B17/038

摘要： A hard disk drive (HDD) having a disk damper and a disk protector. The HDD includes a base member, a spindle motor installed on the base member, a plurality of data storage disks mounted on the spindle motor, an actuator pivotably installed on the base member and moving a read/write head to specified positions over the disks, a disk damper disposed between adjacent disks of the plurality of disks and reducing vibrations of the disks, and a disk protector projecting by a specified height toward the disks form positions of top and bottom surfaces of the disk damper to correspond to outer edges of the disks where data is not recorded. Accordingly, if the disks are deflected due to an external shock, only the outer edges of the disks contact the disk protector, thereby preventing data recording surfaces of the disks from being damaged.

摘要翻译： 具有盘式阻尼器和盘保护器的硬盘驱动器（HDD）。 HDD包括基座构件，安装在基座构件上的主轴电机，安装在主轴电机上的多个数据存储盘，可枢转地安装在基座构件上并将读/写头移动到盘上指定位置的执行器， 设置在所述多个盘的相邻盘之间并减少所述盘的振动的盘阻尼器，以及从所述盘阻尼器的顶表面和底表面的位置朝向所述盘突出指定高度的盘保护器，以对应于所述盘的外边缘 其中不记录数据。 因此，如果磁盘由于外部冲击而偏转，则只有磁盘的外边缘与磁盘保护器接触，从而防止磁盘的数据记录表面被损坏。

公开(公告)号：US20080027204A1

公开(公告)日：2008-01-31

申请号：US11819630

申请日：2007-06-28

申请人： Jae-Suk Lee ,  Hee-Soo Yoo ,  Shahinur Rahman

发明人： Jae-Suk Lee ,  Hee-Soo Yoo ,  Shahinur Rahman

IPC分类号： C08G18/22 ,  C07C49/00 ,  C07D323/00

CPC分类号： C08G18/02

摘要： Disclosed herein is a metal carbonate initiator for polymerizing isocyanates and a method for polymerizing isocyanates by anionic polymerization using the same, in which the initiator forms a cluster upon the initiation and protects stability of terminal anions at the end of the chain to cause controlled polymerization, thus preventing depolymerizaton and improving reaction time and efficiency without the use of a separate additive.

摘要翻译： 本文公开了用于使异氰酸酯聚合的金属碳酸酯引发剂和通过使用该异氰酸酯的阴离子聚合使异氰酸酯聚合的方法，其中引发剂在起始时形成簇并保护链端部末端阴离子的稳定性以引起受控聚合， 从而防止解聚和提高反应时间和效率而不使用单独的添加剂。

公开(公告)号：US07314814B2

公开(公告)日：2008-01-01

申请号：US10972189

申请日：2004-10-22

申请人： Jae-Suk Lee

发明人： Jae-Suk Lee

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/76837

摘要： Semiconductor devices and methods of fabricating the same are disclosed. A disclosed method comprises: partially forming a first gate stack; partially forming a second gate stack adjacent the first gate stack; forming a first interlayer dielectric; and completing the formation of the first and second gate stacks after the first interlayer dielectric has filled a distance between the first and second gate electrodes.

摘要翻译： 公开了半导体器件及其制造方法。 所公开的方法包括：部分地形成第一栅极堆叠; 部分地形成与所述第一栅极堆叠相邻的第二栅极堆叠; 形成第一层间电介质; 以及在第一层间电介质填充第一和第二栅电极之间的距离之后完成第一和第二栅极叠层的形成。

公开(公告)号：US07173155B1

公开(公告)日：2007-02-06

申请号：US11485855

申请日：2006-07-13

申请人： Jae-Suk Lee ,  Sun-Young Chang ,  Kwan-Soo Lee ,  Myung-Hwan Jeong ,  Jung-Eun Yang

发明人： Jae-Suk Lee ,  Sun-Young Chang ,  Kwan-Soo Lee ,  Myung-Hwan Jeong ,  Jung-Eun Yang

IPC分类号： C07C315/00

CPC分类号： C07C309/39

摘要： The present invention relates to a terphenyl dihalide monomer having sulfonate groups and a process for preparing the same. More particularly, the present invention relates to a terphenyl dihalide monomer having sulfonate groups prepared by a process comprising obtaining a terphenyl dihalide derivative by Suzuki cross-coupling of a tetrahalobenzene and phenylboronic acid and introducing sulfonate groups into the phenyl rings at each end of the terphenyl dihalide derivative, the resultant monomer capable of being prepared into a polymer electrolyte having superior ion conductivity through nucleophilic aromatic substitution (SNAr) polymerization due to the presence of two halogen atoms and two conducting sulfonate groups in the monomer molecule, and a process for preparing the same.

摘要翻译： 本发明涉及具有磺酸盐基团的三联苯二卤化物单体及其制备方法。 更具体地，本发明涉及具有磺酸盐基团的三联苯二卤化物单体，其通过以下方法制备，所述方法包括通过四卤代苯和苯硼酸的Suzuki交叉偶联获得三联苯二卤化物衍生物，并且在三联苯的每个末端将引入磺酸基团引入苯环 二卤化物衍生物，所得单体能够通过亲核芳香取代（S N N Ar）聚合制备成具有优异离子传导性的聚合物电解质，由于两个卤素原子和两个导电磺酸基团的存在， 单体分子及其制备方法。

公开(公告)号：US20060183878A1

公开(公告)日：2006-08-17

申请号：US11301144

申请日：2005-12-12

申请人： Jae-Suk Lee ,  Kwan-Soo Lee

发明人： Jae-Suk Lee ,  Kwan-Soo Lee

IPC分类号： C08G14/02

CPC分类号： C08G65/4025

摘要： The present invention relates to terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s prepared by using the monomers, more particularly, terphenyl dihydroxy monomers containing both two hydroxy functional groups and fluorine and fluorinated poly(arylene ether sulfide)s prepared by an aromatic nucleophilic substitution polymerization (SNAr) using the monomers, which are thus useful as optical materials in the field of information telecommunications.

摘要翻译： 本发明涉及通过使用单体制备的含氟和氟化聚（亚芳基醚硫醚）的三联苯基二羟基单体，更具体地说，涉及含有两个羟基官能团的三联苯基二羟基单体和氟和氟化聚（亚芳基醚硫醚），其由 使用单体的芳族亲核取代聚合（S N N Ar），因此可用作信息通信领域的光学材料。

公开(公告)号：US20060138669A1

公开(公告)日：2006-06-29

申请号：US11254441

申请日：2005-10-20

申请人： Jae-Suk Lee

发明人： Jae-Suk Lee

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53233 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices having a copper line layer and methods for manufacturing the same are disclosed. An illustrated semiconductor device comprises a damascene insulating layer having a contact hole, a barrier metal layer including a first ruthenium layer, a ruthenium oxide layer and a second ruthenium layer, a seed copper layer formed on the barrier metal layer, and a copper line layer made of a Cu—Ag—Au solid solution. A disclosed example method of manufacturing a semiconductor device reduces and/or prevents contact characteristic degradation of the barrier metal layer with the silicon substrate or the damascene insulating layer. In addition, by forming the copper line layer made of the Cu—Ag—Au solid solution, long term device reliability may be improved.

公开(公告)号：US20050280123A1

公开(公告)日：2005-12-22

申请号：US11158465

申请日：2005-06-22

申请人： Jae-Suk Lee

发明人： Jae-Suk Lee

IPC分类号： H01L21/336 ,  H01L21/469 ,  H01L23/58

CPC分类号： H01L21/02164 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/2256 ,  H01L21/3144 ,  H01L21/31608 ,  H01L21/3185 ,  H01L27/14609 ,  H01L27/14689 ,  H01L29/6656 ,  H01L29/7833

摘要： Semiconductor devices and methods of manufacturing the same are disclosed. In a disclosed method, a dangling bond in the active region(s) is removed by providing an enough H2 in the PMD liner layer and the interlayer insulating layer directly contacting the active regions, and then gradually diffusing the H2 in a subsequent heat treatment. The method includes forming a gate electrode having a side wall spacer, forming source and drain regions, forming a PMD liner layer by sequentially forming a SiO2:H layer, a SiON:H layer and a SiN:H layer above the gate electrode and the source and drain regions, forming an interlayer insulating layer above the PMD liner layer, and diffusing hydrogen in the PMD liner layer and the interlayer insulating layer to the source and drain region by N2 annealing or Ar annealing.

摘要翻译： 公开了半导体器件及其制造方法。 在所公开的方法中，通过在PMD衬垫层和与有源区直接接触的层间绝缘层中提供足够的H 2 N，然后逐渐扩散，去除有源区中的悬挂键 在随后的热处理中的H 2 N 2。 该方法包括形成具有侧壁间隔物的栅电极，形成源区和漏区，通过依次形成SiO 2 H层，SiON:H层和SiN：H层形成PMD衬层; H层，形成在PMD衬垫层上方的层间绝缘层，并将PMD衬层层和层间绝缘层中的氢扩散到源极和漏极区域N 2， / SUB退火或Ar退火。

公开(公告)号：US20050124150A1

公开(公告)日：2005-06-09

申请号：US11003926

申请日：2004-12-03

申请人： Jae-Suk Lee

发明人： Jae-Suk Lee

IPC分类号： H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/8242 ,  H01L21/302

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/3165 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device fabrication method, which includes forming an inter metal dielectric on a semiconductor substrate having wirings and planarizing the inter metal dielectric through a chemical mechanical polishing, wherein the inter metal dielectric is formed by carrying out at least one cycle of depositing polycrystalline silicon, plasma-processing the polycrystalline silicon, and oxidizing the polycrystalline silicon.

摘要翻译： 本发明涉及一种半导体器件制造方法，其包括在具有布线的半导体衬底上形成金属间电介质，并通过化学机械抛光使金属间电介质平坦化，其中通过进行至少一个周期形成金属间电介质 沉积多晶硅，等离子体处理多晶硅，并氧化多晶硅。