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60 条记录 (耗时 0.035 秒)

    Information recording/reproducing device
    35.
    发明授权
    Information recording/reproducing device 失效
    信息记录/再现装置

    公开(公告)号：US07961586B2

    公开(公告)日：2011-06-14

    申请号：US11895378

    申请日：2007-08-24

    申请人： Kohichi Kubo ,  Takahiro Hirai ,  Shinya Aoki ,  Akihiro Koga ,  Junichi Akiyama ,  Shinji Takakura ,  Hiroaki Nakamura

    发明人： Kohichi Kubo ,  Takahiro Hirai ,  Shinya Aoki ,  Akihiro Koga ,  Junichi Akiyama ,  Shinji Takakura ,  Hiroaki Nakamura

    IPC分类号： G11B9/00

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1481

    摘要： An information recording/reproducing device according to an example of the present invention includes first and second heads, a recording medium having a data area from which recording data is read by the first head and a servo burst area from which a servo burst signal is read by the second head, a driver which performs positioning of the second head based on the servo burst signal, and a resistor which covers a surface of the servo burst area and does not cover a surface of the data area. The recording data and the servo burst signal are recorded by a pulse signal.

    摘要翻译： 根据本发明的示例的信息记录/再现装置包括第一和第二磁头，具有数据区的记录介质，由第一磁头读取记录数据和读取伺服脉冲信号的伺服脉冲串区域 通过第二头，基于伺服突发信号执行第二头的定位的驱动器，以及覆盖伺服突发区域的表面并且不覆盖数据区域的表面的电阻器。 记录数据和伺服脉冲信号由脉冲信号记录。

    SEMICONDUCTOR MEMORY DEVICE
    36.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件

    公开(公告)号：US20120012807A1

    公开(公告)日：2012-01-19

    申请号：US13182095

    申请日：2011-07-13

    申请人： Takeshi YAMAGUCHI ,  Hirofumi Inoue ,  Reika Ichihara ,  Takayuki Tsukamoto ,  Takashi Shigeoka ,  Katsuyuki Sekine ,  Shinya Aoki

    发明人： Takeshi YAMAGUCHI ,  Hirofumi Inoue ,  Reika Ichihara ,  Takayuki Tsukamoto ,  Takashi Shigeoka ,  Katsuyuki Sekine ,  Shinya Aoki

    IPC分类号： H01L45/00

    CPC分类号： H01L45/146 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233

    摘要： A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line.

    摘要翻译： 实施例中的半导体存储器件包括存储单元，每个存储单元设置在第一线和第二线之间，并且具有串联连接的可变电阻元件和开关元件。 可变电阻元件包括可变电阻层，其被配置为在低电阻状态和高电阻状态之间改变其电阻值。 可变电阻层由过渡金属氧化物构成。 构成过渡金属氧化物的过渡金属和氧的比例沿着从第一线指向第二线的第一方向在1:1和1:2之间变化。

    Semiconductor memory device
    37.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US08759806B2

    公开(公告)日：2014-06-24

    申请号：US13182095

    申请日：2011-07-13

    申请人： Takeshi Yamaguchi ,  Hirofumi Inoue ,  Reika Ichihara ,  Takayuki Tsukamoto ,  Takashi Shigeoka ,  Katsuyuki Sekine ,  Shinya Aoki

    发明人： Takeshi Yamaguchi ,  Hirofumi Inoue ,  Reika Ichihara ,  Takayuki Tsukamoto ,  Takashi Shigeoka ,  Katsuyuki Sekine ,  Shinya Aoki

    IPC分类号： H01L29/02

    CPC分类号： H01L45/146 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233

    摘要： A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line.

    摘要翻译： 实施例中的半导体存储器件包括存储单元，每个存储单元设置在第一线和第二线之间，并且具有串联连接的可变电阻元件和开关元件。 可变电阻元件包括可变电阻层，其被配置为在低电阻状态和高电阻状态之间改变其电阻值。 可变电阻层由过渡金属氧化物构成。 构成过渡金属氧化物的过渡金属和氧的比例沿着从第一线指向第二线的第一方向在1:1和1:2之间变化。