公开(公告)号：US07200032B2

公开(公告)日：2007-04-03

申请号：US10923651

申请日：2004-08-20

申请人： Daniel Braun ,  Richard Ferrant

发明人： Daniel Braun ,  Richard Ferrant

IPC分类号： G11C11/00

CPC分类号： H01L27/224 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/1655 ,  G11C11/1659 ,  H01L27/228

摘要： A magnetic memory element comprising a magnetic storage element having at least one magnetic layer made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic layer having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element for sensing the magnetization of the at least one magnetic layer of the magnetic storage element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the at least one magnetic layer of the magnetic storage element, the magnetic sensor element being conductively coupled to the at least one current line.

摘要翻译： 一种磁存储元件，包括磁存储元件，所述磁存储元件具有至少一个由磁性材料制成的磁性层，并且相对于其上形成有磁存储元件的晶片表面垂直取向，所述磁性层具有磁各向异性，其磁化矢量为 磁耦合到至少一个电流线，以及磁传感器元件，用于感测磁存储元件的至少一个磁性层的磁化，包括至少一个磁性层，磁化矢量磁耦合到磁场的磁化矢量 所述磁存储元件的至少一个磁性层，所述磁传感器元件导电地耦合到所述至少一个电流线。

公开(公告)号：US20060221674A1

公开(公告)日：2006-10-05

申请号：US11094473

申请日：2005-03-31

申请人： Daniel Braun ,  Gerhard Mueller

发明人： Daniel Braun ,  Gerhard Mueller

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： An MRAM cell includes a magnetic tunnel junction including first and second magnetic regions stacked in a parallel, overlying relationship and separated by a non-magnetic tunneling barrier layer. The first magnetic region includes a reference layer having a fixed magnetization adjacent the tunneling barrier layer. The second magnetic region includes a free layer having first and second free magnetizations aligned with an easy axis of magnetization of the free layer. The first and second free magnetizations are oppositely aligned and separated by a magnetic domain wall. The magnetic domain wall is magnetically movable along the easy axis of the free layer, and the free layer is magnetically coupled to magnetic fields generated by first and second currents running through first and second conductive lines crossing each other, wherein the easy axis of the free layer is inclined under an inclination angle relative to both the first and second conductive lines.

公开(公告)号：US07099186B1

公开(公告)日：2006-08-29

申请号：US11054735

申请日：2005-02-10

申请人： Daniel Braun

发明人： Daniel Braun

IPC分类号： G11C7/00

CPC分类号： G11C11/16 ,  H01L43/12

摘要： A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes free and fixed magnetic regions made of magnetic material separated by a tunneling barrier layer made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer made of the same antiferromagnetic material such that in applying an external magnetic field fixed magnetizations are brought into a scissored configuration.

摘要翻译： 提供了一个双层MRAM单元，包括第一和第二磁性隧道结的堆叠结构。 每个磁性隧道结包括由非磁性材料制成的隧道势垒层分开的由磁性材料制成的自由和固定的磁性区域。 固定的磁性区域由至少一个由相同的反铁磁性材料制成的钉扎层固定，使得在施加外部磁场时，固定的磁化进入剪切构型。

公开(公告)号：US07092284B2

公开(公告)日：2006-08-15

申请号：US10922434

申请日：2004-08-20

申请人： Daniel Braun ,  Rainer Leuschner ,  Ulrich Klostermann

发明人： Daniel Braun ,  Rainer Leuschner ,  Ulrich Klostermann

IPC分类号： G11C11/14

CPC分类号： G11C11/15

摘要： A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, wherein the magnetic sensor element being conductively connected to said at least one current line.

公开(公告)号：US07088611B2

公开(公告)日：2006-08-08

申请号：US10998807

申请日：2004-11-30

申请人： Daniel Braun

发明人： Daniel Braun

IPC分类号： G11C11/14

CPC分类号： G11C11/15

摘要： A magnetoresistive memory cell includes a magnetic tunnel junction including first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers being antiferromagnetically coupled. The magnetoresistive memory cell further includes a switchable ferromagnetic offset field layer being provided with a free magnetic moment vector that is freely switchable between the same and opposite directions with respect to the fixed magnetic moment vector of the first magnetic region. A method of switching a magnetoresistive memory cell includes adiabatic rotational switching, where the memory cell is brought in an active state exhibiting reduced switching fields before its switching and is brought in a passive state exhibiting enlarged switching fields after its switching.

摘要翻译： 磁阻存储单元包括包括第一（固定）和第二（自由）磁区的磁隧道结，其中第二磁区包括至少两个铁磁层，以反铁磁耦合。 磁阻存储单元还包括可切换铁磁偏移场层，其具有相对于第一磁区的固定磁矩矢量在相同方向和相反方向之间自由切换的自由磁矩矢量。 切换磁阻存储单元的方法包括绝热旋转切换，其中存储单元在其切换之前呈现出减小的开关场的有效状态，并且在其切换之后呈现出展现出扩大的开关场的被动状态。

公开(公告)号：US20060024886A1

公开(公告)日：2006-02-02

申请号：US10903722

申请日：2004-07-30

申请人： Richard Ferrant ,  Daniel Braun ,  Pascal Louis

发明人： Richard Ferrant ,  Daniel Braun ,  Pascal Louis

IPC分类号： H01L21/336

CPC分类号： H01L27/224

摘要： A MRAM storage device comprises a substrate, on/above of which a plurality of word lines, a plurality of bit lines, a plurality of memory cells, and a plurality of isolation diodes are provided. Each memory cell forms a resistive cross point of one word line and one bit line, respectively. Each memory cell is connected to one isolation diode such that a unidirectional conductive path is formed from a word line to a bit line via the corresponding memory cell, respectively. The substrate, at least a part of the word lines or at least a part of the bit lines, and the isolation diodes are realized as one common monocrystal semiconductor block.

摘要翻译： MRAM存储设备包括其上/其上提供有多个字线，多个位线，多个存储器单元和多个隔离二极管的衬底。 每个存储单元分别形成一个字线和一个位线的电阻交叉点。 每个存储单元连接到一个隔离二极管，使得单向导电路径分别通过对应的存储单元从字线形成到位线。 基板，字线的至少一部分或位线的至少一部分以及隔离二极管被实现为一个常见的单晶半导体块。

公开(公告)号：US20060013039A1

公开(公告)日：2006-01-19

申请号：US10925487

申请日：2004-08-25

申请人： Daniel Braun ,  Gerhard Mueller

发明人： Daniel Braun ,  Gerhard Mueller

IPC分类号： G11C11/14

CPC分类号： G11C11/5607 ,  G11C11/15 ,  G11C2211/5634

摘要： A magnetic tunnel junction (MTJ) device is configured to store at least two bits of data in a single cell utilizing the variable resistance characteristic of a MTJ. The MTJ includes a soft and two fixed magnetic layers with fixed field directions oriented in perpendicular directions. The soft magnetic layer is separated from the fixed layers by insulating layers preferably with different thicknesses, or with different material compositions. The resulting junction resistance can exhibit at least four distinct resistance values dependent on the magnetic orientation of the free magnetic layer. The cell is configured using a pattern with four lobes to store two bits, and eight lobes to store three bits. The resulting cell can be used to provide a fast, non-volatile magnetic random access memory (MRAM) with high density and no need to rewrite stored data after they are read, or as a fast galvanic isolator.

摘要翻译： 磁隧道结（MTJ）装置被配置为利用MTJ的可变电阻特性在单个单元中存储至少两位数据。 MTJ包括一个软和两个固定的磁性层，固定磁场方向定向在垂直方向。 软磁性层通过优选具有不同厚度或不同材料组成的绝缘层与固定层分离。 所得到的结电阻可以显示取决于自由磁性层的磁取向的至少四个不同的电阻值。 使用具有四个波瓣的模式来存储单元，以存储两个位，并且八个波瓣存储三个位。 所得到的单元可以用于提供高密度的快速，非易失性磁性随机存取存储器（MRAM），并且不需要在读取之后重写存储的数据，或者作为快速电流隔离器。