公开(公告)号：US20160315272A1

公开(公告)日：2016-10-27

申请号：US15203506

申请日：2016-07-06

Applicant: FUJIFILM Corporation

Inventor： Katsuyuki YOUFU ,  Yuki HIRAI ,  Kensuke MASUI

IPC: H01L51/00 ,  C07D495/04 ,  C07D495/22 ,  C09D5/24

CPC classification number: H01L51/0074 ,  C07D491/22 ,  C07D493/22 ,  C07D495/04 ,  C07D495/22 ,  C09B57/00 ,  C09D5/24 ,  H01L51/0005 ,  H01L51/0065 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0566

Abstract: Provided are an organic transistor having high carrier mobility that contains a compound represented by the following formula in a semiconductor active layer (each of X1 to X4 represents NR100, an O atom, or a S atom; NR100 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an acyl group, an aryl group, or a heteroaryl group; each of R1 to R6 represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, or R6 is a substituent represented by -L-R; L is a divalent linking group having a specific structure; and R is an alkyl group having 5 to 19 carbon atoms); a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; an organic semiconductor film for a non-light-emitting organic semiconductor device; and a method for manufacturing an organic semiconductor film for a non-light-emitting organic semiconductor device.

公开(公告)号：US20160315271A1

公开(公告)日：2016-10-27

申请号：US15199138

申请日：2016-06-30

Applicant: FUJIFILM Corporation

Inventor： Katsuyuki YOUFU ,  Yuki HIRAI ,  Kensuke MASUI

IPC: H01L51/00 ,  C07D487/04 ,  C07D495/04 ,  C07D493/04 ,  C07C39/373 ,  C07C25/24

CPC classification number: H01L51/0074 ,  C07C17/263 ,  C07C25/24 ,  C07C39/373 ,  C07C47/55 ,  C07D487/04 ,  C07D493/04 ,  C07D495/04 ,  C07D498/04 ,  C07D513/04 ,  C07F7/081 ,  C09B57/00 ,  H01L51/0068 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/0566

Abstract: Provided are an organic transistor having high carrier mobility that contains a compound represented by the following formula in a semiconductor active layer; a compound; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (each of X1 and X2 represents NR13, an O atom, or a S atom; A1 represents CR7 or a N atom; A2 represents CR8 or a N atom; R13 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an acyl group; each of R1 to R8 independently represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, R6, R7, or R8 is a substituent represented by -L-R; L represents a divalent linking group having a specific structure; and R represents an alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, an oligo-oxyethylene group in which a repetition number v of an oxyethylene unit is equal to or greater than 2, a siloxane group, an oligosiloxane group having two or more silicon atoms, or a trialkylsilyl group).

公开(公告)号：US20160301018A1

公开(公告)日：2016-10-13

申请号：US15186311

申请日：2016-06-17

Applicant: FUJIFILM Corporation

Inventor： Katsuyuki YOUFU ,  Yuki HIRAI ,  Kensuke MASUI

IPC: H01L51/00 ,  C07D487/04

CPC classification number: H01L51/0072 ,  C07D333/18 ,  C07D487/04 ,  C07D493/04 ,  C07D495/04 ,  C09B57/00 ,  C09B67/009 ,  H01L51/0065 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0069 ,  H01L51/0074 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/0566

Abstract: Provided are an organic transistor containing a compound represented by the following formula in a semiconductor active layer; a compound which improves carrier mobility when being used in a semiconductor layer of an organic transistor and exhibits high solubility in an organic solvent; an organic semiconductor material for a non-light-emitting organic semiconductor device; a material for an organic transistor; a coating solution for a non-light-emitting organic semiconductor device; and an organic semiconductor film for a non-light-emitting organic semiconductor device (each of X1 and X2 represents NR13, an O atom, or a S atom; A1 represents CR7 or a N atom; A2 represents CR8 or a N atom; R13 represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an acyl group; each of R1 to R8 independently represents a hydrogen atom or a substituent; at least one of R1, R2, R3, R4, R5, R6, R7, or R8 is a substituent represented by -L-R; L represents a divalent linking group having a specific structure; and R represents an alkyl group, a cyano group, a vinyl group, an ethynyl group, an oxyethylene group, an oligo-oxyethylene group in which a repetition number v of an oxyethylene unit is equal to or greater than 2, a siloxane group, an oligosiloxane group having two or more silicon atoms, or a trialkylsilyl group).

公开(公告)号：US20160013429A1

公开(公告)日：2016-01-14

申请号：US14860183

申请日：2015-09-21

Applicant: FUJIFILM Corporation

Inventor： Koji TAKAKU ,  Yuki HIRAI ,  Wataru SOTOYAMA

IPC: H01L51/00 ,  C07D493/04 ,  C09D5/24 ,  C07D498/04 ,  C07F7/08 ,  C07D487/04 ,  C07D495/04 ,  C07D513/04

CPC classification number: H01L51/0074 ,  C07D487/04 ,  C07D493/04 ,  C07D495/04 ,  C07D498/04 ,  C07D513/04 ,  C07F7/0812 ,  C09B57/00 ,  C09B57/008 ,  C09D5/24 ,  H01L51/0065 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. X represents S, O or NR7; A represents CR8 or a nitrogen atom; and at least one of R1 to R8 represents a substituent.

Abstract translation: 在半导体活性层中含有式（1）表示的化合物的有机薄膜晶体管具有高的载流子迁移率，反复驱动后的阈值电压的小变化和在有机溶剂中的高溶解度。 X表示S，O或NR7; A表示CR8或氮原子; 并且R 1至R 8中的至少一个表示取代基。

公开(公告)号：US20130181202A1

公开(公告)日：2013-07-18

申请号：US13789537

申请日：2013-03-07

Applicant: FUJIFILM CORPORATION

Inventor： Katsuyuki YOFU ,  Kimiatsu NOMURA ,  Eiji FUKUZAKI ,  Yuki HIRAI ,  Mitsumasa HAMANO ,  Tetsuro MITSUI

IPC: H01L51/00

CPC classification number: H01L51/0072 ,  C07C225/22 ,  C07D219/02 ,  C07D221/18 ,  C07D455/03 ,  C07D455/06 ,  C07D471/14 ,  C07D471/16 ,  C09B21/00 ,  C09B23/04 ,  C09B57/008 ,  H01L51/0052 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0094 ,  H01L51/4206 ,  H01L51/4273 ,  Y02E10/549

Abstract: There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol−1·l·cm−1 or more at the absorption maximum wavelength, and a difference between a melting point and a deposition temperature (a melting point−a deposition temperature) is 31° C. or more.

Abstract translation: 提供一种具有特定化学式的化合物，其在紫外可见吸收光谱中在400nm以上且小于720nm处具有吸收最大值，其摩尔消光系数为10,000mol -1·l·cm -1 以上的吸收最大波长，熔点与沉积温度（熔点 - 沉积温度）之间的差为31℃以上。