公开(公告)号：US10816728B1

公开(公告)日：2020-10-27

申请号：US16686782

申请日：2019-11-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/13 ,  G02B6/43 ,  G02B6/126 ,  G02B6/122 ,  G02B6/12

Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A first waveguide core has a first width, and a polarizer includes a second waveguide core having a second width that is greater than the first width. The second waveguide core is coupled to the first waveguide core. The polarizer includes a layer that is positioned adjacent to a side surface of the second waveguide core. The layer is comprised of a material having a permittivity with an imaginary part that ranges from 0 to about 15.

公开(公告)号：US10816725B2

公开(公告)日：2020-10-27

申请号：US16134295

申请日：2018-09-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob ,  Abu Thomas

IPC: G02B6/122 ,  G02B6/125 ,  G02B6/12

Abstract: Structures with waveguides in multiple levels and methods of fabricating a structure that includes waveguides in multiple levels. A waveguide crossing has a first waveguide and a second waveguide arranged to intersect the first waveguide. A third waveguide is displaced vertically from the waveguide crossing, The third waveguide includes a portion having an overlapping arrangement with a portion of the first waveguide. The overlapping portions of the first and third waveguides are configured to transfer optical signals between the first waveguide and the third waveguide.

公开(公告)号：US10698159B2

公开(公告)日：2020-06-30

申请号：US16165600

申请日：2018-10-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/136 ,  G02B6/122

Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A first dielectric layer comprised of a first silicon nitride is formed. The waveguide is arranged over the first dielectric layer. A second dielectric layer is formed that is arranged over the waveguide. The second dielectric layer is composed of a second silicon nitride having a lower absorption of optical signals than the first silicon nitride.

公开(公告)号：US10670804B1

公开(公告)日：2020-06-02

申请号：US16234906

申请日：2018-12-28

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Abu Thomas ,  Ajey Poovannummoottil Jacob

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/136

Abstract: Waveguiding structures and methods of fabricating a waveguiding structure. The waveguiding structure includes a waveguide and an array of semiconductor fins that are arranged at least in part inside the waveguide.

公开(公告)号：US20200166709A1

公开(公告)日：2020-05-28

申请号：US16199811

申请日：2018-11-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/34

Abstract: Structures for a waveguide and methods of fabricating a structure for a waveguide. A grating coupler is formed that has an arrangement of grating structures. A conformal layer is arranged over the plurality of grating structures. The conformal layer is composed of a tunable material having a refractive index that changes with an applied voltage.

公开(公告)号：US10649245B1

公开(公告)日：2020-05-12

申请号：US16298446

申请日：2019-03-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob ,  Abu Thomas

IPC: G02F1/035 ,  G02F1/025 ,  G02F1/015

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator is arranged over a portion of a first waveguide core. The electro-optic modulator may include an electrode, an active layer, a second waveguide core, and a dielectric layer that is arranged between the active layer and the second waveguide core. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied between the electrode and the first waveguide core.

公开(公告)号：US10585219B2

公开(公告)日：2020-03-10

申请号：US16000249

申请日：2018-06-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian

IPC: G02B6/34 ,  G02B5/18 ,  G02B6/42 ,  G02B6/12 ,  G02B6/293 ,  G02B6/124

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A grating coupler structure includes: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material.

公开(公告)号：US10444433B1

公开(公告)日：2019-10-15

申请号：US16170262

申请日：2018-10-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Abu Thomas ,  Ajey Poovannummoottil Jacob ,  Kenneth J. Giewont ,  Karen Nummy ,  Andreas Stricker ,  Bo Peng

IPC: G02B6/122 ,  G02B6/136 ,  G02B6/12

Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A tapered feature composed of a dielectric material is arranged over the waveguide. The tapered feature includes a sidewall that is angled relative to a longitudinal axis of the waveguide.

公开(公告)号：US10429582B1

公开(公告)日：2019-10-01

申请号：US15968997

申请日：2018-05-02

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yusheng Bian ,  Ajey Poovannummoottil Jacob ,  Steven M. Shank

IPC: G02B6/26 ,  G02B6/122 ,  G02B6/136 ,  G02B6/125 ,  G02B6/124 ,  G02B6/12

Abstract: Waveguide-to-waveguide couplers, systems that include waveguide-to-waveguide couplers, and methods of fabricating waveguide-to-waveguide couplers. A first waveguide is coupled to a first waveguide taper, and a second waveguide is coupled to a second waveguide taper. The first waveguide and the first waveguide taper are comprised of silicon, and the second waveguide and the second waveguide taper are comprised of silicon nitride. The second waveguide and the second waveguide taper are arranged in a vertical direction over the first waveguide and the first waveguide taper.

公开(公告)号：US10241269B1

公开(公告)日：2019-03-26

申请号：US15974252

申请日：2018-05-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ajey Poovannummoottil Jacob ,  Yusheng Bian

IPC: G02B6/124 ,  G02B6/12

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A structure includes: a grating coupler having a sawtooth configuration provided over a semiconductor slab; and a back end of line (BEOL) stack over the sawtooth configuration of the grating coupler.