公开(公告)号：US20090160411A1

公开(公告)日：2009-06-25

申请号：US12340571

申请日：2008-12-19

申请人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung O. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

发明人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung O. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

IPC分类号： G05F1/10

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M1/36 ,  H02M1/44 ,  Y10T307/50

摘要： A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

摘要翻译： 数字多电平存储器系统包括电荷泵和用于产生用于各种存储器操作的调节高电压的电压调节器。 电荷泵可以包括多个升压电路，以在快速启动期间升高电荷泵的输出。 之后，升压电路被禁止，使电荷泵产生高电压而不加速。 升压电路可以被连续地使能以升高电压。 升压电路可以是无负载的。 电压调节器可以在开环中工作，并且可以包括电阻分压器作为用于调节来自电荷泵的高电压的参考电压。 电荷泵可以包括扩频泵时钟，以减少用于电容器或电感器片上电荷泵浦的电磁推理。

公开(公告)号：US20080111532A1

公开(公告)日：2008-05-15

申请号：US11941964

申请日：2007-11-18

申请人： Hieu Van TRAN ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

发明人： Hieu Van TRAN ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

IPC分类号： G05F3/16

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M1/36 ,  H02M1/44 ,  Y10T307/50

摘要： A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

摘要翻译： 数字多电平存储器系统包括电荷泵和用于产生用于各种存储器操作的调节高电压的电压调节器。 电荷泵可以包括多个升压电路，以在快速启动期间升高电荷泵的输出。 之后，升压电路被禁止，使电荷泵产生高电压而不加速。 升压电路可以被连续地使能以升高电压。 升压电路可以是无负载的。 电压调节器可以在开环中工作，并且可以包括电阻分压器作为用于调节来自电荷泵的高电压的参考电压。 电荷泵可以包括扩频泵时钟，以减少用于电容器或电感器片上电荷泵浦的电磁推理。

公开(公告)号：US07362084B2

公开(公告)日：2008-04-22

申请号：US11080070

申请日：2005-03-14

申请人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

发明人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

IPC分类号： G05F3/16 ,  G11C5/14 ,  H02J1/10

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M1/36 ,  H02M1/44 ,  Y10T307/50

摘要： A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

摘要翻译： 数字多电平存储器系统包括电荷泵和用于产生用于各种存储器操作的调节高电压的电压调节器。 电荷泵可以包括多个升压电路，以在快速启动期间升高电荷泵的输出。 之后，升压电路被禁止，使电荷泵产生高电压而不加速。 升压电路可以被连续地使能以升高电压。 升压电路可以是无负载的。 电压调节器可以在开环中工作，并且可以包括电阻分压器作为用于调节来自电荷泵的高电压的参考电压。 电荷泵可以包括扩频泵时钟，以减少用于电容器或电感器片上电荷泵浦的电磁推理。

公开(公告)号：US07276971B2

公开(公告)日：2007-10-02

申请号：US11652719

申请日：2007-01-11

申请人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin

发明人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin

IPC分类号： H03F3/45

CPC分类号： H03F3/45192 ,  H03F3/211 ,  H03F3/45183 ,  H03F3/45475 ,  H03F3/72 ,  H03F2203/21109 ,  H03F2203/21145 ,  H03F2203/45138 ,  H03F2203/45288 ,  H03F2203/45541 ,  H03F2203/45618 ,  H03F2203/45626 ,  H03F2203/45722 ,  H03F2203/45728 ,  H03F2203/7206 ,  H03F2203/7215

摘要： A multi-operational amplifier system comprises a plurality of operational amplifiers and a controller to configure the plurality of operational amplifiers. The operational amplifiers may be selectively configured to operate individually or in combination with other of the operational amplifiers. The operational amplifiers may have different common node inputs. In one aspect, the different inputs may be selected from groups of PMOS, N-type NMOS and NZ NMOS inputs. The operational amplifiers may include the different inputs that are arranged as differential pairs.

公开(公告)号：US07236054B2

公开(公告)日：2007-06-26

申请号：US10767248

申请日：2004-01-28

申请人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin

发明人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin

IPC分类号： H03F3/45

CPC分类号： H03F3/45192 ,  H03F3/211 ,  H03F3/45183 ,  H03F3/45475 ,  H03F3/72 ,  H03F2203/21109 ,  H03F2203/21145 ,  H03F2203/45138 ,  H03F2203/45288 ,  H03F2203/45541 ,  H03F2203/45618 ,  H03F2203/45626 ,  H03F2203/45722 ,  H03F2203/45728 ,  H03F2203/7206 ,  H03F2203/7215

摘要： A multi-operational amplifier system comprises a plurality of operational amplifiers and a controller to configure the plurality of operational amplifiers. The operational amplifiers may be selectively configured to operate individually or in combination with other of the operational amplifiers. The operational amplifiers may have different common node inputs. In one aspect, the different inputs may be selected from groups of PMOS, N-type NMOS and NZ NMOS inputs. The operational amplifiers may include the different inputs that are arranged as differential pairs.

公开(公告)号：US08067931B2

公开(公告)日：2011-11-29

申请号：US12987906

申请日：2011-01-10

申请人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

发明人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

IPC分类号： G05F3/26

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M1/36 ,  H02M1/44 ,  Y10T307/50

摘要： A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

公开(公告)号：US20110121799A1

公开(公告)日：2011-05-26

申请号：US12987906

申请日：2011-01-10

申请人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

发明人： Hieu Van Tran ,  Sang Thanh Nguyen ,  Anh Ly ,  Hung Q. Nguyen ,  Wingfu Aaron Lau ,  Nasrin Jaffari ,  Thuan Trong Vu ,  Vishal Sarin ,  Loc B. Hoang

IPC分类号： G05F1/46 ,  G05F3/16 ,  G05F3/08

CPC分类号： H02M3/07 ,  G11C5/145 ,  H02M1/36 ,  H02M1/44 ,  Y10T307/50

摘要： A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

摘要翻译： 数字多电平存储器系统包括电荷泵和用于产生用于各种存储器操作的调节高电压的电压调节器。 电荷泵可以包括多个升压电路，以在快速启动期间升高电荷泵的输出。 之后，升压电路被禁止，使电荷泵产生高电压而不加速。 升压电路可以被连续地使能以升高电压。 升压电路可以是无负载的。 电压调节器可以在开环中工作，并且可以包括电阻分压器作为用于调节来自电荷泵的高电压的参考电压。 电荷泵可以包括扩频泵时钟，以减少用于电容器或电感器片上电荷泵浦的电磁推理。

公开(公告)号：US07661041B2

公开(公告)日：2010-02-09

申请号：US11953754

申请日：2007-12-10

申请人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin ,  Hung Q. Nguyen ,  William John Saiki ,  Loc B. Hoang

发明人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin ,  Hung Q. Nguyen ,  William John Saiki ,  Loc B. Hoang

IPC分类号： G11C29/00

CPC分类号： G11C11/5621 ,  G11C16/04 ,  G11C29/50 ,  G11C29/50004

摘要： A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

公开(公告)号：US20090067235A1

公开(公告)日：2009-03-12

申请号：US11953754

申请日：2007-12-10

申请人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin ,  Hung Q. Nguyen ,  William John Saiki ,  Loc B. Hoang

发明人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin ,  Hung Q. Nguyen ,  William John Saiki ,  Loc B. Hoang

IPC分类号： G11C16/00 ,  G11C29/00 ,  G11C16/06

CPC分类号： G11C11/5621 ,  G11C16/04 ,  G11C29/50 ,  G11C29/50004

摘要： A test device and method may be used to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

摘要翻译： 可以使用测试装置和方法来检测数字多电平存储器单元系统的电压，电流或信号，或者通过将输入的电压，电流或信号施加到存储器单元系统来测试操作或性能。

公开(公告)号：US07325177B2

公开(公告)日：2008-01-29

申请号：US10991702

申请日：2004-11-17

申请人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin ,  Hung Q. Nguyen ,  William John Saiki ,  Loc B. Hoang

发明人： Hieu Van Tran ,  Anh Ly ,  Sang Thanh Nguyen ,  Vishal Sarin ,  Hung Q. Nguyen ,  William John Saiki ,  Loc B. Hoang

IPC分类号： G11C29/00

CPC分类号： G11C11/5621 ,  G11C16/04 ,  G11C29/50 ,  G11C29/50004

摘要： A test circuit is sued to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.

摘要翻译： 检测电路用于检测数字多电平存储单元系统的电压，电流或信号，或者通过将输入的电压，电流或信号施加到存储单元系统来测试操作或性能。