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31.
公开(公告)号:US09357398B2
公开(公告)日:2016-05-31
申请号:US13700122
申请日:2011-05-27
CPC分类号: H04W16/08 , H04W36/22 , H04W72/0426 , H04W72/0486 , H04W92/20
摘要: A radio base station (eNB1), which is used in a radio communication system that can autonomously adjust, based on load information transmitted/received between radio base stations, the radio base station parameters used for defining coverage, comprises: a network communication unit (140) that can receive, from another radio base station, first load information indicating the load level of the other radio base station and that can transmit, to the other radio base station, a request for transmission of second load information the information amount of which is greater than that of the first load information; and a control unit (120) that, when the load level of the other radio base station indicated by the received first load information satisfies a given condition, controls such that the request for transmission of the second load information is transmitted to the other radio base station.
摘要翻译: 一种无线电基站(eNB1),用于能够根据无线基站之间发送/接收的负载信息自主调整用于定义覆盖的无线基站参数的无线通信系统,包括:网络通信单元 140),其可以从另一个无线电基站接收首先加载指示另一个无线电基站的负载水平的信息,并且可以向另一个无线电基站发送第二负载信息的发送请求,该第二负载信息的信息量 大于第一载荷信息; 以及控制单元(120),当由所接收的第一负载信息指示的另一无线电基站的负载水平满足给定条件时,控制使得第二负载信息的发送请求被发送到另一无线电基站 站。
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公开(公告)号:US09294925B2
公开(公告)日:2016-03-22
申请号:US13637951
申请日:2011-03-28
申请人: Kazutaka Nakamura
发明人: Kazutaka Nakamura
CPC分类号: H04W16/10 , H04W72/0453 , H04W72/082 , Y02D70/1262 , Y02D70/1264
摘要: Disclosed is a low power base station (300) which acquires propagation loss information indicating the propagation loss between the low power base station (300) and a high power base station (100). The low power base station (300) restricts the frequency band allocated to a femtocell terminal (400) under the low power base station (300) on the basis of the propagation loss indicated in the acquired propagation loss information.
摘要翻译: 公开了一种低功率基站(300),其获取表示低功率基站(300)与高功率基站(100)之间的传播损耗的传播损耗信息。 低功率基站(300)基于所获取的传播损耗信息中指示的传播损耗,限制分配给低功率基站(300)下的毫微微小区终端(400)的频带。
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公开(公告)号:US20130142682A1
公开(公告)日:2013-06-06
申请号:US13817252
申请日:2011-12-19
CPC分类号: F04D25/0606 , F01C21/007 , F01C21/10 , F04B39/121 , F04C18/0207 , F04C23/008 , F04C29/0085 , F04C2240/30 , F04C2240/40 , F04C2240/803 , H02K5/225
摘要: Provided is a compressor motor that can achieve reduction in length of a motor lead wire, compactification of a motor housing, and reduction in size and weight of an electric compressor, and also provided is an electric compressor including the compressor motor. A cluster block (39) that is connected to a stator coil end of a motor (10) via a motor lead wire is placed in an outer circumferential region of a stator coil end cover (38) or a bobbin (37A) of the motor (10) such that a terminal connection port of the cluster block (39) faces an outer circumferential side. An opening (34) and a placement bearing surface (35) for inserting and placing a hermetic terminal (8) are provided in an outer circumferential region of a motor housing (4), the outer circumferential region facing the cluster block (39) provided on the motor (10) side. The hermetic terminal (8) is inserted and placed from an outer circumferential side of the motor housing (4) to the opening (34) and the placement bearing surface (35), to be thereby made directly connectable to the terminal connection port of the cluster block (39).
摘要翻译: 提供一种压缩机电动机,其能够实现电动机引线的长度的缩短,电动机壳体的紧凑化以及电动压缩机的尺寸和重量的减小,并且还提供了包括压缩机电动机的电动压缩机。 经由电动机引线连接到电动机(10)的定子线圈端的集束块(39)被放置在电动机的定子线圈端盖(38)或绕线管(37A)的外周区域中 (10),使得群集块(39)的终端连接端口面向外周侧。 设置在电动机壳体(4)的外周区域中的用于插入和放置密封端子(8)的开口(34)和放置支承面(35),设置有面向簇块(39)的外周区域 在电动机(10)侧。 密封端子(8)从电机壳体(4)的外周侧插入并放置到开口(34)和放置支承表面(35),从而可直接连接到电动机壳体(4)的端子连接端口 群集块(39)。
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34.
公开(公告)号:US20130072259A1
公开(公告)日:2013-03-21
申请号:US13700124
申请日:2011-05-27
IPC分类号: H04W28/02
CPC分类号: H04W28/0247 , H04W28/08 , H04W36/0005 , H04W36/0083 , H04W36/16 , H04W36/22
摘要: Disclosed is a radio base station (eNB1) provided with a storage unit (130) for storing base station information for selecting the destination of a message, a network communication unit (140) for transmitting the message to another radio base station selected according to the base station information, and a control unit (120) for controlling the storage unit (130) to set as base station information the priority level of the radio base station to which the message was sent according to the state of response to the transmitted message.
摘要翻译: 本发明公开了一种无线基站(eNB1),具备存储用于选择消息的目的地的基站信息的存储单元(130),用于将该消息发送到根据该无线基站选择的另一无线基站的网络通信单元 基站信息和控制单元(120),用于根据对所发送的消息的响应状态,控制存储单元(130)将基站信息设置为发送消息的无线基站的优先级。
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公开(公告)号:US20130023299A1
公开(公告)日:2013-01-24
申请号:US13638423
申请日:2011-03-28
申请人: Kazutaka Nakamura
发明人: Kazutaka Nakamura
IPC分类号: H04W52/24
CPC分类号: H04W52/242 , H04W52/143 , H04W52/244
摘要: Disclosed is a low power base station (300) which acquires propagation loss information indicating the propagation loss between the low power base station (300) and a high power base station (100). The low power base station (300) restricts the transmission power of the low power base station (300) and the transmission power of a femtocell terminal (400) on the basis of the propagation loss indicated in the acquired propagation loss information.
摘要翻译: 公开了一种低功率基站(300),其获取表示低功率基站(300)与高功率基站(100)之间的传播损耗的传播损耗信息。 低功率基站(300)基于所获取的传播损耗信息中指示的传播损耗来限制低功率基站(300)的发送功率和毫微微小区终端(400)的发送功率。
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公开(公告)号:US08344371B2
公开(公告)日:2013-01-01
申请号:US12123849
申请日:2008-05-20
申请人: Kazutaka Nakamura , Yoshihiro Ito
发明人: Kazutaka Nakamura , Yoshihiro Ito
IPC分类号: H01L29/10
CPC分类号: H01L31/109 , H01L31/18
摘要: A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.
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公开(公告)号:US07635906B2
公开(公告)日:2009-12-22
申请号:US12257678
申请日:2008-10-24
申请人: Kazutaka Nakamura , Yoshihiro Ito
发明人: Kazutaka Nakamura , Yoshihiro Ito
IPC分类号: H01L31/0203 , H01L31/06 , H01L31/0256
CPC分类号: H01L31/109 , H01L31/022408 , H01L31/022416 , H01L31/0296 , H01L31/1828 , Y02E10/543
摘要: The ultraviolet sensor has a ZnO layer composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer which is provided in contact with the ZnO layer and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode electrically connected to the ZnO layer, and a second terminal electrode electrically connected to the (Ni,Zn)O layer. The ZnO layer is disposed at an ultraviolet ray receiving side. The (Ni,Zn)O layer is preferably formed of a sintered body.
摘要翻译: 紫外线传感器具有由包含ZnO的氧化物半导体构成的ZnO层; 设置在与ZnO层接触的由Ni固溶于其中的氧化物半导体构成的(Ni,Zn)O层; 与ZnO层电连接的第一端子电极和与(Ni,Zn)O层电连接的第二端子电极。 ZnO层设置在紫外线接收侧。 (Ni,Zn)O层优选由烧结体形成。
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公开(公告)号:US06620696B2
公开(公告)日:2003-09-16
申请号:US10267697
申请日:2002-10-10
IPC分类号: H01L21336
CPC分类号: H01C7/118
摘要: A voltage nonlinear resistor is composed of an aggregate of silicon carbide particles doped with impurities, in which oxygen and at least one of aluminum and boron are diffused in the vicinity of the surfaces of the silicon carbide particles, the diffusion length of the oxygen is about 100 nm or less from the surfaces of the silicon carbide particles, and the diffusion length of at least one of the aluminum and the boron is in the range of about 5 to 100 nm from the surfaces of the silicon carbide particles. A method for fabricating a voltage nonlinear resistor and a varistor using a voltage nonlinear resistor are also disclosed.
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公开(公告)号:US06362720B1
公开(公告)日:2002-03-26
申请号:US09023683
申请日:1998-02-13
申请人: Kazuhiro Kaneko , Kazutaka Nakamura
发明人: Kazuhiro Kaneko , Kazutaka Nakamura
IPC分类号: H01C710
CPC分类号: H01C7/112 , C04B35/453
摘要: There is provided a varistor having high surge resisting capability in spite of its small size and a method of manufacturing the same. The varistor is mainly composed of zinc oxide and contains a composite oxide expressed by the chemical formula Zn2SnO4. It is manufactured using a method wherein zinc oxide and tin oxide are mixed; the mixture is subjected to a thermal process thereafter to obtain a composite oxide expressed by the chemical formula Zn2SnO4; and the composite oxide is combined with the zinc oxide which is the main component and a thermal process is performed to obtain a raw material for the varistor.
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公开(公告)号:US06184770B2
公开(公告)日:2001-02-06
申请号:US09287870
申请日:1999-04-07
申请人: Kazutaka Nakamura , Kazuhiro Kaneko
发明人: Kazutaka Nakamura , Kazuhiro Kaneko
IPC分类号: H01C710
CPC分类号: H01C7/023 , Y10T29/49082
摘要: A monolithic varistor which is small and inexpensive and has excellent varistor characteristics includes a layered ceramic body containing ZnO as a primary component and, based on 100 mol % ZnO, an Al component in an amount of about 100-350 ppm calculated as A12O3, a Bi component in an amount of about 1.0-3.0 mol % calculated as Bi2O3, a Co component in an amount of about 0.1-1.5 mol% calculated as Co2O3, an Mn component in an amount of about 0.1-1.0 mol % calculated as MnO, at least one Sb component and/or an Sn component in an amount of about 0.1-2.0 mol % calculated as SbO3/2 or SnO, a Y component in an amount of 0-about 3.0 mol % calculated as Y2O3, an Si component in an amount of about 0.1-1.0 mol % calculated as SiO2, and a B component in an amount of about 0.1-2.0 mol % calculated as B2O3; and an average grain size in a characteristic portion of the varistor is about 0.9-3.0 &mgr;m.
摘要翻译: 小型廉价并且具有优异的变阻器特性的单片变阻器包括:以ZnO为主要成分的层状陶瓷体,以100mol%的ZnO为基准,以Al 2 O 3计算的量为约100〜350ppm的Al成分,a 以Bi 2 O 3计,量为约1.0-3.0摩尔%的Bi组分,以Co 2 O 3计算的约0.1-1.5摩尔%的Co组分,按MnO计算的约0.1-1.0摩尔%的Mn组分, 按SbO3 / 2或SnO计算的量为约0.1-2.0摩尔%的至少一种Sb成分和/或Sn成分,以Y 2 O 3计,量为0〜约3.0摩尔%的Y成分,Si 以SiO 2计算的量为约0.1〜1.0摩尔%,B 2 O 3计,B成分为0.1〜2.0摩尔%左右; 并且变阻器的特征部分中的平均晶粒尺寸为约0.9-3.0μm。
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