公开(公告)号：US20090285017A1

公开(公告)日：2009-11-19

申请号：US12506637

申请日：2009-07-21

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/161 ,  G11C11/1659

摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

摘要翻译： 提供存储器件。 存储器件包括存储层和固定磁化层。 存储层基于磁性材料的磁化状态保留信息。 通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。 信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。 由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

公开(公告)号：US20080164547A1

公开(公告)日：2008-07-10

申请号：US11564595

申请日：2006-11-29

申请人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

摘要翻译： 存储元件包括存储层，其被配置为通过使用磁性材料的磁化状态来保持信息，其中钉扎磁化层设置在存储层的一侧上，具有隧道绝缘层，并且随着磁化方向的磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

公开(公告)号：US08411499B2

公开(公告)日：2013-04-02

申请号：US12936441

申请日：2009-04-15

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  H01L43/08

摘要： [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10−25 or less that is obtained when a write pulse a little larger than the inversion threshold value is applied.[Solving Means] While taking time of 2 ns or more, write power injected at a time a write pulse falls is reduced gradually. At this time, it is favorable to keep a rate of decline of a voltage of the write pulse at the time of the fall small until the voltage of the write pulse at the time of the fall becomes smaller than an inversion threshold voltage of the magnetic memory device.

摘要翻译： 本发明提供一种包括记录层的磁记录装置的记录方法，所述记录层能够改变磁化方向并保持作为磁体的磁化方向的信息和相对于记录层设置的磁化参考层 绝缘层插入其间并成为磁化方向的参考，磁存储器件通过经由绝缘层在记录层和磁化参考层之间流动的电流记录信息，该记录方法能够保持甚至 当施加显着高于反转阈值的写入脉冲时，施加写入脉冲比反转阈值稍大的时候获得的写入错误率为10-25或更小。 [解决方法]在2ns以上的时间内，写入脉冲下降时的写入功率逐渐减小。 此时，有效的是在下降时保持写入脉冲的电压下降的程度小直到在下降时写入脉冲的电压变得小于磁性的反转阈值电压 存储设备。

公开(公告)号：US08149613B2

公开(公告)日：2012-04-03

申请号：US12629671

申请日：2009-12-02

申请人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

发明人： Minoru Ikarashi ,  Yutaka Higo ,  Masanori Hosomi ,  Hiroshi Kano ,  Shinichiro Kusunoki ,  Hiroyuki Ohmori ,  Yuki Oishi ,  Tetsuya Yamamoto ,  Kazutaka Yamane

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01L27/226 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08

摘要： A resistance variable memory device is provided and includes a resistance variable memory cell that writes data by utilizing a spin transfer effect based on an injection current. The memory device also includes a driving circuit that generates a combined pulse of a plurality of write pulses and an offset pulse defining the level between the write pulses and supplies the combined pulse to the memory cell at the time of the writing.

摘要翻译： 提供了电阻可变存储器件，并且包括通过利用基于注入电流的自旋转移效应来写入数据的电阻变化存储单元。 存储器件还包括产生多个写入脉冲的组合脉冲的驱动电路和限定写入脉冲之间的电平的偏移脉冲，并且在写入时将组合的脉冲提供给存储器单元。

公开(公告)号：US08018759B2

公开(公告)日：2011-09-13

申请号：US12817327

申请日：2010-06-17

申请人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

发明人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C17/16 ,  G11C29/50 ,  G11C2029/4402 ,  Y10S977/935

摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。

公开(公告)号：US20110026322A1

公开(公告)日：2011-02-03

申请号：US12936441

申请日：2009-04-15

申请人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  H01L43/08

摘要： [Object] To provide a recording method for a magnetic memory device including a recording layer that is capable of changing a magnetization direction and holds information as a magnetization direction of a magnetic body and a magnetization reference layer that is provided with respect to the recording layer with an insulation layer interposed therebetween and becomes a reference of the magnetization direction, the magnetic memory device being recorded with information by a current flowing between the recording layer and the magnetization reference layer via the insulation layer, the recording method being capable of maintaining, even when a write pulse considerably higher than an inversion threshold value is applied, a write error rate of 10−25 or less that is obtained when a write pulse a little larger than the inversion threshold value is applied.[Solving Means] While taking time of 2 ns or more, write power injected at a time a write pulse falls is reduced gradually. At this time, it is favorable to keep a rate of decline of a voltage of the write pulse at the time of the fall small until the voltage of the write pulse at the time of the fall becomes smaller than an inversion threshold voltage of the magnetic memory device. [Selected Drawing] FIG. 1

摘要翻译： 本发明提供一种包括记录层的磁记录装置的记录方法，所述记录层能够改变磁化方向并保持作为磁体的磁化方向的信息和相对于记录层设置的磁化参考层 绝缘层插入其间并成为磁化方向的参考，磁存储器件通过经由绝缘层在记录层和磁化参考层之间流动的电流记录信息，该记录方法能够保持甚至 当施加显着高于反转阈值的写入脉冲时，施加写入脉冲比反转阈值稍大的时候获得的写入错误率为10-25或更小。 [解决方法]在2ns以上的时间内，写入脉冲下降时的写入功率逐渐减小。 此时，有效的是在下降时保持写入脉冲的电压下降的程度小直到在下降时写入脉冲的电压变得小于磁性的反转阈值电压 存储设备。 [所选图] 1

公开(公告)号：US07633796B2

公开(公告)日：2009-12-15

申请号：US12013895

申请日：2008-01-14

申请人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  Y10S977/934 ,  Y10S977/935

摘要： A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.

摘要翻译： 存储元件包括用于根据磁性材料的磁化状态保持信息的存储层; 以及磁化方向固定的磁化固定层，其相对于存储层通过非磁性层布置。 存储层的磁化方向通过在层叠方向上施加电流而改变，以使信息能够被记录到存储层。 在磁化固定层或相对于存储层的磁化固定层的相对侧上形成分别具有层压方向上的磁化成分并且彼此具有不同方向的磁化的多个磁化区域。

公开(公告)号：US07616475B2

公开(公告)日：2009-11-10

申请号：US11745937

申请日：2007-05-08

申请人： Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16

摘要： A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer. Also, a ferromagnetic layer forming the memory layer has a magnetostriction constant of 1×10−5 or more.

摘要翻译： 提供了包括基于磁性材料的磁化状态保持信息的存储层的存储元件。 在存储元件中，通过中间层为存储层提供磁化钉扎层，中间层由绝缘体形成，自旋极化电子沿堆叠方向注入以改变存储层的磁化方向，因此 该信息被记录在存储器层中。 此外，形成存储层的铁磁层的磁致伸缩常数为1×10 -5以上。

公开(公告)号：US07525166B2

公开(公告)日：2009-04-28

申请号：US11736360

申请日：2007-04-17

申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/309 ,  H01L27/228 ,  H01L43/08

摘要： A memory element is provided. The memory element includes a memory layer that retains information based on a magnetization state of a magnetic material, in which a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer, and a fine oxide is dispersed in an entire or part of a ferromagnetic layer forming the memory layer.

摘要翻译： 提供存储元件。 存储元件包括存储层，其基于磁性材料的磁化状态保持信息，其中通过中间层为存储层提供磁化钉扎层，中间层由绝缘体形成，自旋极化电子 在堆叠方向上注入以改变存储层的磁化方向，从而将信息记录在存储层中，并且细微氧化物分散在形成存储层的铁磁层的整个或部分中。

公开(公告)号：US20080225581A1

公开(公告)日：2008-09-18

申请号：US12014478

申请日：2008-01-15

申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

IPC分类号： G11C11/14

CPC分类号： G11C11/161 ,  G11C11/1659

摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

摘要翻译： 提供存储器件。 存储器件包括存储层和固定磁化层。 存储层基于磁性材料的磁化状态保留信息。 通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。 信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。 由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。