公开(公告)号：US2995665A

公开(公告)日：1961-08-08

申请号：US50985155

申请日：1955-05-20

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L27/06

CPC classification number: H01L27/0688

公开(公告)号：US2988652A

公开(公告)日：1961-06-13

申请号：US71563558

申请日：1958-02-17

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/72 ,  H01L29/73 ,  H03F99/00 ,  H03K3/35

CPC classification number: H03K3/35 ,  H01L27/0688 ,  H01L29/06 ,  H01L29/72 ,  H01L29/73 ,  H03F21/00

公开(公告)号：US3577285A

公开(公告)日：1971-05-04

申请号：US3577285D

申请日：1968-03-28

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: C30B23/00 ,  C30B23/02 ,  H01L21/00 ,  H01L7/36 ,  C01B31/36 ,  C23C11/00

CPC classification number: C30B23/02 ,  C30B23/00 ,  H01L21/00 ,  Y10S148/079 ,  Y10S148/148 ,  Y10S257/926 ,  Y10S438/925 ,  Y10S438/932

Abstract: EPITAXIAL GROWTH OF SEMICONDUCTIVE MATERIALS IS EFFECTED IN AN INERT ATMOSPHERE BY PHYSICALLY CONTACTING THE SURFACES OF A SOURCE OF SEMICONDUCTIVE MATERIAL TO PARTICULAR SUFACE AREAS OF A CRYSTALLINE SUBSTRATE ONTO WHICH SUCH SURFACE AREAS OF A CRYSTALLINE SUBSTRATE ONTO WHICH SUCH GROWTH IS TO BE EFFECTED. THE SOURCE IS HEATED TO A TEMPERATURE TO CAUSE RAPID VAPORIZATION OF THE SEMI-CONDUCTIVE MATERIAL; THE SUBSTRATE IS MAINTAINED AT A SLIGHTLY LOWER TEMPERATURE TO PROMOTE THE CONDENSATION AND EPITAXIAL GROWTH OF THE VAPORIZED SEMICONDUCTIVE MATERIAL ON THE CONTACTED SUBSTRATE SURFACES. THE SURFACE OF THE SOURCE CAN BE PREFORMED SO AS TO GROW PARTICULAR PATTERNS OF THE SEMICONDUCTIVE MATERIAL ONTO THE SUBSTRATE SURFACE. CONDUCTIVITY-TYPE DETERMINING IMPURITIES CAN BE INTRODUCED

EITHER INTO THE INERT ATMOSPHERE OR BE PRESENT IN THE SOURCE SO AS TO IMPART A PARTICULAR CONDUCTIVITY TO THE GROWN SEMICONDUCTIVE MATERIAL.

公开(公告)号：US3229104A

公开(公告)日：1966-01-11

申请号：US24679462

申请日：1962-12-24

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L21/00 ,  H01L21/18 ,  H01L27/10 ,  H01L29/00 ,  H01L29/74 ,  H01L31/12 ,  H01L31/173

CPC classification number: H01L31/12 ,  H01L21/00 ,  H01L21/185 ,  H01L27/10 ,  H01L29/00 ,  H01L29/74 ,  H01L31/173

公开(公告)号：US3083302A

公开(公告)日：1963-03-26

申请号：US78030058

申请日：1958-12-15

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L21/00 ,  H01L29/00 ,  H03K3/313 ,  H03K3/352

CPC classification number: H03K3/352 ,  H01L21/00 ,  H01L29/00 ,  H03K3/313

公开(公告)号：US3054070A

公开(公告)日：1962-09-11

申请号：US7970460

申请日：1960-12-30

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H03B7/08

CPC classification number: H03B7/08

公开(公告)号：US3047733A

公开(公告)日：1962-07-31

申请号：US64562757

申请日：1957-03-12

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L27/06 ,  H01L29/00

CPC classification number: H01L27/0688 ,  H01L29/00

公开(公告)号：US2986653A

公开(公告)日：1961-05-30

申请号：US71238358

申请日：1958-01-31

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/72 ,  H01L29/73 ,  H03F99/00 ,  H03K19/082

CPC classification number: H03K19/082 ,  H01L27/0688 ,  H01L29/06 ,  H01L29/72 ,  H01L29/73 ,  H03F21/00

公开(公告)号：US2889499A

公开(公告)日：1959-06-02

申请号：US45861954

申请日：1954-09-27

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L23/488 ,  H01L29/00 ,  H01L29/06 ,  H01L29/72 ,  H01L29/73 ,  H01L31/00 ,  H03F99/00 ,  H03K3/35

CPC classification number: H03K3/35 ,  H01L23/488 ,  H01L29/00 ,  H01L29/06 ,  H01L29/72 ,  H01L29/73 ,  H01L31/00 ,  H01L2224/4918 ,  H03F21/00

公开(公告)号：US2846592A

公开(公告)日：1958-08-05

申请号：US50985355

申请日：1955-05-20

Applicant: IBM

Inventor： RUTZ RICHARD F

IPC: H01L27/02 ,  H01L27/06 ,  H03F1/30

CPC classification number: H01L27/0688 ,  H01L27/0211 ,  H03F1/302