公开(公告)号：US20170249250A1

公开(公告)日：2017-08-31

申请号：US15457847

申请日：2017-03-13

Applicant: Intel Corporation

Inventor： Raj K. RAMANUJAN ,  Rajat AGARWAL ,  Kai CHENG ,  Taarinya POLEPEDDI ,  Camille C. RAAD ,  David J. ZIMMERMAN ,  Muthukumar P. SWAMINATHAN ,  Dimitrios ZIAKAS ,  Mohan J. KUMAR ,  Bassam N. COURY ,  Glenn J. HINTON

IPC: G06F12/0811 ,  G11C11/406 ,  G06F12/0895 ,  G06F12/0897 ,  G11C14/00

CPC classification number: G06F12/0811 ,  G06F12/0895 ,  G06F12/0897 ,  G06F2212/2024 ,  G06F2212/205 ,  G11C11/40615 ,  G11C14/009 ,  Y02D10/13

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.”