Abstract:
Embodiments include techniques for static random access memory (SRAM) bitline equalization using phase change material (PCM). The techniques include detecting a defect in SRAM bitlines, and programming a variable resistance PCM cell to offset the detected defect. The techniques also include measuring signal development time for the SRAM bitlines, and adjusting the programming of the variable resistance PCM cell based at least in part on the measured signal development for the SRAM bitlines.
Abstract:
An aspect includes identifying a repaired memory array element in a memory array, and identifying memory array elements in the memory array that are adjacent to the repaired memory array element. A group that includes the repaired and adjacent memory array elements is formed and monitored for error conditions. It is determined whether a number of the error conditions exceeds a threshold. A repair action is performed to the memory array based on determining that the number of error conditions exceeds the threshold.
Abstract:
An integrated circuit is configured to detect current leakage that results from electromigration in the integrated circuit. An isolation power switch selectively connects a target voltage rail in the integrated circuit to a power source. A voltage memory stores a record of an initial voltage decay rate for the target voltage rail while isolated from a manufacturer's power source. A voltage record comparator logic compares the initial voltage decay rate to a field voltage decay rate for the target voltage rail when isolated from a field power source. An output device indicates that a difference between the initial voltage decay rate and the field voltage decay rate for the target voltage rail exceeds a predefined limit, where the difference is a result of current leakage caused by electromigration in the integrated circuit.
Abstract:
A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A reference voltage (Vref) calibration mechanism reduces the time and resources for calibration by reducing the number of tests needed to sufficiently determine the boundaries of the data eye of the memory device by using a combination of small steps and small steps to find a preferred reference voltage. In one example, the Vref calibration mechanism uses small steps of the reference voltage in a first range above a nominal reference voltage to find a maximum eye width then uses small steps to more precisely find the maximum eye width. If a maximum reference voltage is found in the first range then the second range below the nominal reference voltage does not need to be tested thereby saving additional time and resources.
Abstract:
A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A reference voltage (Vref) calibration mechanism reduces the time and resources for calibration by reducing the number of tests needed to sufficiently determine the boundaries of the data eye of the memory device by using a combination of small steps and small steps to find a preferred reference voltage. In one example, the Vref calibration mechanism uses small steps of the reference voltage in a first range above a nominal reference voltage to find a maximum eye width then uses small steps to more precisely find the maximum eye width. If a maximum reference voltage is found in the first range then the second range below the nominal reference voltage does not need to be tested thereby saving additional time and resources.
Abstract:
A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A temporal calibration mechanism reduces the time and resources for calibration by reducing the number tests needed to sufficiently determine the boundaries of the data eye of the memory device. For one or more values of the voltage reference, the temporal calibration mechanism performs a minimal number of tests to find the edges of the data eye for the hold and setup times.
Abstract:
A method detects and mitigates harm caused by electromagnetic interference (EMI) to digital transmissions within an electronic circuit. One or more processors check for an initial transmission error during an initial digital transmission between a digital transmitter and a digital receiver on an electronic circuit. In response to detecting the initial transmission error, the processor(s) receive electromagnetic interference (EMI) detection signals from one or more EMI detectors. In response to determining that the EMI detection signals represent an EMI level that exceeds a predetermined value, the processor(s) identify an EMI anomaly source on the electronic circuit and adjusts the EMI anomaly source until the EMI level has been reduced to a nominal level. A copy of the initial digital transmission is then resent from the digital transmitter to the digital receiver. If no transmission error reoccurs, then the EMI anomaly source is kept in the adjusted state.