公开(公告)号：US08859406B2

公开(公告)日：2014-10-14

申请号：US13737127

申请日：2013-01-09

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L31/065 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25-0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract translation: 一种制造高效CIGS太阳能电池的方法，包括从约25原子％至约66原子％之间的Ga浓度的溅射靶中沉积Ga浓度（Ga /（Ga + In）= 0.25-0.66）。 此外，该方法包括与导致高效率的高温退火工艺相结合的高温硒化工艺。

公开(公告)号：US20140170422A1

公开(公告)日：2014-06-19

申请号：US13715588

申请日：2012-12-14

Applicant: INTERMOLECULAR INC.

Inventor： Yu Wang ,  Brent Boyce ,  Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Minh Huu Le ,  Haifan Liang ,  Zhi-Wen Wen Sun

IPC: G02B1/10

CPC classification number: G02B1/10 ,  C03C17/3644 ,  C03C17/366 ,  C03C2217/94 ,  G02B1/116 ,  G02B5/282

Abstract: A method for making low emissivity panels, including forming a base layer to promote a seed layer for a conductive silver layer. The base layer can be an amorphous layer or a nanocrystalline layer, which can facilitate zinc oxide seed layer growth, together with smoother surface and improved thermal stability. The base layer can include doped tin oxide, for example, tin oxide doped with Al, Ga, In, Mg, Ca, Sr, Sb, Bi, Ti, V, Y, Zr, Nb, Hf, Ta, or any combination thereof. The doped tin oxide base layer can influence the growth of (002) crystallographic orientation in zinc oxide, which in turn serves as a seed layer template for silver (111).

Abstract translation: 一种制造低发射率面板的方法，包括形成基底层以促进导电银层的种子层。 基层可以是非晶层或纳米晶层，其可以促进氧化锌种子层生长，以及更平滑的表面和改善的热稳定性。 基底层可以包括掺杂的氧化锡，例如掺杂有Al，Ga，In，Mg，Ca，Sr，Sb，Bi，Ti，V，Y，Zr，Nb，Hf，Ta或其任何组合的氧化锡 。 掺杂的氧化锡基层可以影响氧化锌中（002）晶体取向的生长，其又用作银（111）的种子层模板。

公开(公告)号：US08709861B2

公开(公告)日：2014-04-29

申请号：US13738735

申请日：2013-01-10

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for high temperature selenization of Cu—In—Ga metal precursor films comprises a partial selenization at a temperature between about 350 C and about 450 C in a Se-containing atmosphere followed by a more fully selenization step at a temperature between about 550 C and about 650 C in a Se-containing atmosphere. The Se-containing component of the atmosphere is removed through a rapid gas exchange process and the CIGS film is annealed to influence the Ga distribution throughout the depth of the film.

Abstract translation: Cu-In-Ga金属前体膜的高温硒化方法包括在含硒气氛中在约350℃至约450℃的温度下部分硒化，随后在约550℃的温度下进行更完全的硒化步骤 在含硒气氛中约为650℃。 通过快速气体交换过程除去大气中的含硒组分，并将CIGS膜退火以影响整个膜深度的Ga分布。

公开(公告)号：US20140113403A1

公开(公告)日：2014-04-24

申请号：US14139309

申请日：2013-12-23

Applicant: INTERMOLECULAR INC.

Inventor： Jeroen Van Duren ,  Ben Cardozo ,  Haifan Liang

IPC: H01L31/18

CPC classification number: H01L21/02568 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/541

Abstract: Methods of forming CZTS absorber layers in a TFPV device with a graded bandgap with or without a graded concentration are provided. In general, a Cu—Zn—Sn—(S, Se) precursor film is formed by sputtering. The Cu—Zn—Sn—(S, Se) precursor film can be formed as a single layer or as a multilayer stack. The composition may be uniform or graded throughout the thickness of the film. In some embodiments, the sputtering is performed in a reactive atmosphere including a chalcogen source (e.g. H2S, H2Se, etc.). The films, in conjunction with a subsequent selenization or anneal process, are converted to an absorber layer.

Abstract translation: 提供了在具有或不具有分级浓度的梯度带隙的TFPV装置中形成CZTS吸收层的方法。 通常，通过溅射形成Cu-Zn-Sn-（S，Se）前体膜。 Cu-Zn-Sn-（S，Se）前体膜可以形成为单层或多层叠层。 组合物可以在膜的整个厚度上均匀或分级。 在一些实施方案中，溅射是在包括硫族元素源（例如H 2 S，H 2 Se等）的反应性气氛中进行的。 该膜与随后的硒化或退火工艺一起被转化为吸收层。

公开(公告)号：US20140007938A1

公开(公告)日：2014-01-09

申请号：US14019413

申请日：2013-09-05

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang ,  Zhi-Wen Sun ,  Jeroen Van Duren

IPC: H01L31/0749

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Abstract translation: 使用激光退火技术形成铜铟镓（硫化物）硒化物（CIGS）太阳能电池，碲化镉（CdTe）太阳能电池和铜锌锡（硫化物）硒化物（CZTS））太阳能电池的方法来使吸收体和/或 缓冲层。 激光退火可能导致更好的结晶度，更低的表面粗糙度，更大的晶粒尺寸，更好的组成均匀性，复合中心的减少和增加的致密化。 另外，激光退火可能导致形成非平衡相，有利的结果。

公开(公告)号：US20130122642A1

公开(公告)日：2013-05-16

申请号：US13738735

申请日：2013-01-10

Applicant: Intermolecular, Inc.

Inventor： Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method for high temperature selenization of Cu—In—Ga metal precursor films comprises a partial selenization at a temperature between about 350 C and about 450 C in a Se-containing atmosphere followed by a more fully selenization step at a temperature between about 550 C and about 650 C in a Se-containing atmosphere. The Se-containing component of the atmosphere is removed through a rapid gas exchange process and the CIGS film is annealed to influence the Ga distribution throughout the depth of the film.

Abstract translation: Cu-In-Ga金属前体膜的高温硒化方法包括在含硒气氛中在约350℃至约450℃的温度下部分硒化，随后在约550℃的温度下进行更完全的硒化步骤 在含硒气氛中约为650℃。 通过快速气体交换过程除去大气中的含硒组分，并将CIGS膜退火以影响整个膜深度的Ga分布。