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    Solid-State Batteries with Improved Performance and Reduced Manufacturing Costs and Methods for Forming the Same
    2.
    发明申请
    Solid-State Batteries with Improved Performance and Reduced Manufacturing Costs and Methods for Forming the Same 审中-公开
    固态电池具有改进的性能和降低制造成本及其形成方法

    公开(公告)号：US20160181615A1

    公开(公告)日：2016-06-23

    申请号：US14577774

    申请日：2014-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Jeroen Van Duren ,  Abraham Anapolsky

    IPC: H01M4/62 ,  H01M10/052 ,  H01M4/04 ,  H01M4/66

    CPC classification number: H01M4/621 ,  H01M4/661 ,  H01M4/662 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/058 ,  H01M2220/30

    Abstract: Embodiments provided herein describe solid-state lithium batteries and methods for forming such batteries. A layer stack may be formed between a substrate of the batteries and a current collector of the batteries. A texturing may be provided to at least one of the components of the batteries to increase the interfacial area between the components. At least one of conductive metal oxides, conductive metal nitrides, conductive metal carbides, or a combination thereof may be used to form a current collector of the batteries.

    Abstract translation: 本文提供的实施例描述了固态锂电池及其形成方法。 可以在电池的基板和电池的集电体之间形成层叠。 可以向电池的至少一个部件提供纹理化以增加部件之间的界面面积。 可以使用导电金属氧化物，导电金属氮化物，导电金属碳化物或其组合中的至少一种来形成电池的集电体。

    Optical Absorbers
    3.
    发明申请
    Optical Absorbers 有权
    光学吸收器

    公开(公告)号：US20140273311A1

    公开(公告)日：2014-09-18

    申请号：US14105797

    申请日：2013-12-13

    Applicant: Intermolecular, Inc.

    Inventor： Haifan Liang ,  Jessica Eid ,  Minh Huu Le ,  Jeroen Van Duren

    IPC: H01L33/30 ,  H01L21/66

    CPC classification number: H01L22/12 ,  H01L31/0322 ,  H01L31/0749 ,  H01L2924/0002 ,  Y02E10/541 ,  Y02P70/521 ,  H01L2924/00

    Abstract: Optical absorbers and methods are disclosed. The methods comprise depositing a plurality of precursor layers comprising one or more of Cu, Ga, and In on a substrate, and heating the layers in a chalcogenizing atmosphere. The plurality of precursor layers can be one or more sets of layers comprising at least two layers, wherein each layer in each set of layers comprises one or more of Cu, Ga, and In exhibiting a single phase. The layers can be deposited using two or three targets selected from Ag and In containing less than 21% In by weight, Cu and Ga where the Cu and Ga target comprises less than 45% Ga by weight, Cu(In,Ga), wherein the Cu(In,Ga) target has an atomic ratio of Cu to (In+Ga) greater than 2 and an atomic ratio of Ga to (Ga+In) greater than 0.5, elemental In, elemental Cu, and In2Se3 and In2S3.

    Abstract translation: 公开了光吸收剂和方法。 所述方法包括在衬底上沉积包含Cu，Ga和In中的一种或多种的多个前体层，并在硫属化气氛中加热层。 多个前体层可以是包括至少两个层的一组或多组层，其中每组层中的每个层包括一个或多个Cu，Ga和In，其表现出单相。 这些层可以使用选自Ag和In的两个或三个靶，其中Cu和Ga的重量比小于45重量％的Cu（In，Ga）含有小于21重量％的Cu和Ga，其中Cu和 Cu（In，Ga）靶的Cu与（In + Ga）的原子比大于2，Ga与（Ga + In）的原子比大于0.5，元素In，元素Cu，In2Se3和In2S3。

    Compositional Graded IGZO Thin Film Transistor
    4.
    发明申请
    Compositional Graded IGZO Thin Film Transistor 有权
    组成渐变IGZO薄膜晶体管

    公开(公告)号：US20140264320A1

    公开(公告)日：2014-09-18

    申请号：US14134678

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Haifan Liang ,  Sang Lee ,  Jeroen Van Duren

    IPC: H01L27/12

    CPC classification number: H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A gradient in the composition of at least one of the elements of a metal-based semiconductor layer is introduced as a function of depth through the layer. The gradient(s) influence the current density response of the device at different gate voltages. In some embodiments, the composition of an element (e.g. Ga) is greater at the interface between the metal-based semiconductor layer and the source/drain layers. The shape of the gradient profile is one of linear, stepped, parabolic, exponential, and the like.

    Abstract translation: 作为穿过该层的深度的函数，引入金属基半导体层的至少一个元素的组成的梯度。 梯度影响器件在不同栅极电压下的电流密度响应。 在一些实施例中，元件（例如Ga）的组成在金属基半导体层和源极/漏极层之间的界面处较大。 梯度轮廓的形状是直线，阶梯，抛物线，指数等之一。

    High Productivity Combinatorial material screening for stable, high-mobility non-silicon thin film transistors
    6.
    发明授权
    High Productivity Combinatorial material screening for stable, high-mobility non-silicon thin film transistors 有权
    高生产率组合材料筛选稳定的高迁移率非硅薄膜晶体管

    公开(公告)号：US09105527B2

    公开(公告)日：2015-08-11

    申请号：US14135086

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Jeroen Van Duren ,  Sang Lee ,  Minh Huu Le

    IPC: H01L21/16 ,  H01L27/12 ,  H01L21/02 ,  H01L21/465 ,  H01L21/66

    CPC classification number: H01L27/1259 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/465 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor deposition, metal-based patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

    Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，基于金属的半导体沉积，基于金属的图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化中的至少一个。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

    High productivity combinatorial material screening for metal oxide films
    7.
    发明授权
    High productivity combinatorial material screening for metal oxide films 有权
    用于金属氧化物膜的高生产率组合材料筛选

    公开(公告)号：US09105526B2

    公开(公告)日：2015-08-11

    申请号：US14134571

    申请日：2013-12-19

    Applicant: Intermolecular, Inc.

    Inventor： Minh Huu Le ,  Sang Lee ,  Jeroen Van Duren

    IPC: H01L21/16 ,  H01L27/12 ,  H01L21/02 ,  H01L21/66

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L22/14 ,  H01L22/20 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

    Abstract: Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate dielectric deposition, gate dielectric patterning, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) deposition, metal-based semiconductor (e.g. ZnOx, ZnSnOx, ZnInOx, or ZnGaOx) patterning, etch stop deposition, etch stop patterning, source/drain deposition, or source/drain patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

    Abstract translation: 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅极介电沉积，栅极电介质图案化，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）沉积，金属基半导体（例如ZnO x，ZnSnO x，ZnInO x或ZnGaO x）中的至少一种， 图案化，蚀刻停止沉积，蚀刻停止图案化，源极/漏极沉积或源极/漏极图案化。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

    Methods for fabricating ZnOSe alloys
    8.
    发明授权
    Methods for fabricating ZnOSe alloys 有权
    制备ZnOSe合金的方法

    公开(公告)号：US08980682B2

    公开(公告)日：2015-03-17

    申请号：US14133203

    申请日：2013-12-18

    Applicant: Intermolecular Inc.

    Inventor： Haifan Liang ,  Jeroen Van Duren

    IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022466 ,  H01L31/0747 ,  H01L31/1832 ,  H01L31/1884 ,  Y02E10/50

    Abstract: Methods of forming absorber layers in a TFPV device are provided. Methods are described to provide the formation of metal oxide films and heating the metal oxide films in the presence of a chalcogen to form a metal-oxygen-chalcogen alloy. Methods are described to provide the formation of metal oxide films, forming a layer of elemental chalcogen on the metal oxide film, and heating the stack to form a metal-oxygen-chalcogen alloy. In some embodiments, the metal oxide film includes zinc oxide and the chalcogen includes selenium.

    Abstract translation: 提供了在TFPV装置中形成吸收层的方法。 描述了提供金属氧化物膜的形成和在硫族元素存在下加热金属氧化物膜以形成金属 - 氧 - 硫族元素合金的方法。 描述了形成金属氧化物膜的方法，在金属氧化物膜上形成元素硫族元素层，并加热该叠层以形成金属 - 氧 - 硫族元素合金。 在一些实施方案中，金属氧化物膜包括氧化锌，硫族元素包括硒。

    Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers
    10.
    发明授权
    Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers 有权
    针对薄膜太阳能电池的背接触，针对超薄吸收体的光捕获进行了优化

    公开(公告)号：US08921151B2

    公开(公告)日：2014-12-30

    申请号：US13737846

    申请日：2013-01-09

    Applicant: Intermolecular, Inc.

    Inventor： Jeroen Van Duren ,  Haifan Liang

    IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0236

    CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/02366 ,  Y02E10/50

    Abstract: Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline films that result in a roughened surface after a wet etch step, etc.

    Abstract translation: 使用薄吸收层增加TFPV太阳能电池板的功率输出的方法包括用于粗糙化和/或纹理化背面接触层的技术。 这些技术包括在后接触沉积之前使基底粗糙化，将颗粒嵌入形成在基底上的溶胶 - 凝胶膜中，以及形成在湿蚀刻步骤之后导致粗糙化表面的多组分多晶膜等。

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