公开(公告)号：US08132053B2

公开(公告)日：2012-03-06

申请号：US12395235

申请日：2009-02-27

申请人： Nathan John Walter Kube ,  Daniel Hoffman ,  Kevin Yoo

发明人： Nathan John Walter Kube ,  Daniel Hoffman ,  Kevin Yoo

IPC分类号： G06F11/00

CPC分类号： G06F11/263 ,  G06F11/3684

摘要： The present disclosure generally relates to the testing of a system that includes software or hardware components. In some embodiments, a testing framework generates a set of test cases for a system under test using a grammar. Each test case may perform an action, such as provide an input to the system under test, and result in an output from the system under test. The inputs and outputs are then compared to the expected results to determine whether the system under test is performing correctly. Prior to generating the set of test cases from the grammar, the testing framework processes the grammar to identify attributes of the test cases to be derived from the grammar and facilitates the modification of the grammar.

摘要翻译： 本公开通常涉及包括软件或硬件组件的系统的测试。 在一些实施例中，测试框架使用语法为被测系统生成一组测试用例。 每个测试用例可以执行一个操作，例如向被测系统提供输入，并产生被测系统的输出。 然后将输入和输出与预期结果进行比较，以确定被测系统是否正确执行。 在从语法生成一组测试用例之前，测试框架处理语法，以识别从语法导出的测试用例的属性，并有助于语法的修改。

公开(公告)号：USD633816S1

公开(公告)日：2011-03-08

申请号：US29342072

申请日：2009-08-18

申请人： Daniel Hoffman

设计人： Daniel Hoffman

公开(公告)号：US20070251920A1

公开(公告)日：2007-11-01

申请号：US11807194

申请日：2007-05-25

申请人： Daniel Hoffman

发明人： Daniel Hoffman

IPC分类号： C23F1/00

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A method is provided for processing a workpiece in a plasma reactor chamber having a ceiling electrode and a workpiece support pedestal within the chamber facing the ceiling electrode and supporting the workpiece. The method includes providing a fixed impedance match element between a generator of VHF plasma source power and the ceiling electrode. The method further includes introducing a process gas into the chamber and supplying VHF plasma source power from the generator to the ceiling electrode to generate a plasma having a plasma ion density in the chamber. The reactance of the ceiling electrode is selected to establish a plasma-electrode resonant frequency of a resonance formed between the plasma and the ceiling electrode at least nearly equal to the frequency of the VHF plasma source power.

摘要翻译： 提供了一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有顶棚电极和工件支撑台座，该腔室面向天花板电极并支撑工件。 该方法包括在VHF等离子体源功率发生器和天花板电极之间提供固定阻抗匹配元件。 该方法还包括将工艺气体引入室中并将VHF等离子体源功率从发生器提供给天花板电极，以产生在腔室中具有等离子体离子密度的等离子体。 选择天线电极的电抗以建立在等离子体和天花板电极之间形成的谐振的等离子体 - 电极谐振频率，其至少几乎等于VHF等离子体源功率的频率。

公开(公告)号：US20140053525A1

公开(公告)日：2014-02-27

申请号：US13591464

申请日：2012-08-22

申请人： Nicholas Borkgren ,  Daniel Hoffman ,  Anthony Washburn

发明人： Nicholas Borkgren ,  Daniel Hoffman ,  Anthony Washburn

IPC分类号： A01D57/20

CPC分类号： A01D57/20 ,  A01D41/14 ,  A01D61/02

摘要： A harvesting head (100) has a laterally extending frame (102) on which left and right side conveyor belts (120, 122) are supported. A center conveyor belt (124) is disposed between the left and right side conveyor belts (120, 122) to receive crop material from the left and right side conveyor belt (120, 122) and carry it rearward. Crop deflectors (112, 114) are disposed between the left side conveyor belt (120) and the center conveyor belt (124) and between the right side conveyor belt (122) and the center conveyor belt (124) to deflect cut crop material away from the gaps between the belts and prevent substantially all the cut crop material from being drawn into the gaps between the belts and ejected onto the ground.

摘要翻译： 收获头（100）具有横向延伸的框架（102），左侧和右侧传送带（120,122）被支撑在该横向延伸的框架上。 中心输送带（124）设置在左侧和右侧输送带（120,122）之间，以从左侧和右侧输送带（120,122）接收作物材料，并向后运送。 裁剪偏转器（112,114）设置在左侧传送带（120）和中心传送带（124）之间以及右侧传送带（122）和中心传送带（124）之间，以将切割的作物材料偏离 从带之间的间隙开始，并且防止基本上所有切割的作物材料被吸入带之间的间隙并且被喷射到地面上。

公开(公告)号：US20100178840A1

公开(公告)日：2010-07-15

申请号：US12683909

申请日：2010-01-07

申请人： Daniel Hoffman

发明人： Daniel Hoffman

IPC分类号： A63H33/00 ,  A63H5/00

CPC分类号： A63F7/3622 ,  A63F2007/282 ,  A63F2007/286 ,  A63F2007/3662

摘要： An entertainment device consisting of a track for rolling marbles. The track may be configured onto at least one support surface, such as walls, tables, doors, floors, and vertically or horizontally oriented rod-like structures, such as the branches of a tree. The three dimensional track configurations may consist of at least one interconnected substantially vertical and substantially horizontal support surface.

摘要翻译： 一个娱乐设备，包括滚动大理石的轨道。 轨道可以配置在至少一个支撑表面上，例如墙壁，桌子，门，地板以及垂直或水平定向的棒状结构，例如树的分支。 三维轨道配置可以由至少一个相互连接的基本垂直和基本水平的支撑表面组成。

公开(公告)号：US20070113980A1

公开(公告)日：2007-05-24

申请号：US11612129

申请日：2006-12-18

申请人： Roger Lindley ,  Scott Hogenson ,  Daniel Hoffman

发明人： Roger Lindley ,  Scott Hogenson ,  Daniel Hoffman

IPC分类号： C23F1/00

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32688

摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

摘要翻译： 本文提供了用于在处理室中旋转磁场的方法。 在一个实施例中，用于旋转处理室中的磁场的方法包括形成具有初级形状的磁场; 将主要形状改变为至少两个顺序的过渡形状; 并将过渡形状改变为旋转的主要形状。 任选地，在每个步骤中，磁场可以保持在大致恒定的量级。 可选地，施加到一个或多个磁场产生线圈的最大一个电流等于零或在任何两个相邻步骤之间具有其极性反转。

公开(公告)号：US20070108042A1

公开(公告)日：2007-05-17

申请号：US11612102

申请日：2006-12-18

申请人： Scott Hogenson ,  Roger Lindley ,  Daniel Hoffman

发明人： Scott Hogenson ,  Roger Lindley ,  Daniel Hoffman

IPC分类号： C23C14/32 ,  C23C14/00 ,  H05H1/24

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32688

摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

公开(公告)号：US20070095788A1

公开(公告)日：2007-05-03

申请号：US11608996

申请日：2006-12-11

申请人： Daniel Hoffman ,  Ezra Gold

发明人： Daniel Hoffman ,  Ezra Gold

IPC分类号： G01L21/30 ,  C23F1/00 ,  H01L21/302 ,  G01R31/00 ,  B44C1/22

CPC分类号： H01J37/32174 ,  H01J37/32935

摘要： The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be selected from of a group including ion density, wafer voltage, etch rate, wafer current and possibly other plasma parameters. The chamber parameters may be selected from a group including source power, bias power, chamber pressure, magnet coil current of different coils, gas flow rate in different gas injection zones, gas species composition in different gas injection zones, and possibly other chamber parameters. The method begins with a first step carried out for each one of the selected plasma parameters. This first step consists of fetching from a memory a relevant surface of constant value corresponding to the user-selected value of the one plasma parameter, the surface being defined in a N-dimensional space of which each of the N chamber parameters is a dimension. This step further includes determining an intersection of these relevant surfaces, the intersection corresponding to a target value of each of the N chamber parameter. The method further includes setting each of the N chamber parameters to the corresponding target value.

摘要翻译： 本发明涉及通过控制多个室参数，根据用户选择的多个（即N个）等离子体参数的值，在等离子体反应器室中的工件支撑基座上加工工件的方法。 等离子体参数可以从包括离子密度，晶片电压，蚀刻速率，晶片电流以及可能的其它等离子体参数的组中选择。 室参数可以从包括源功率，偏置功率，室压力，不同线圈的电磁线圈电流，不同气体注入区中的气体流量，不同气体注入区域中的气体种类组成以及可能的其它室参数的组中选择。 该方法从针对所选等离子体参数中的每一个执行的第一步骤开始。 该第一步骤包括从存储器取出对应于一个等离子体参数的用户选择值的恒定值的相关表面，该表面在N维空间中被限定，其中每个N室参数是维度。 该步骤还包括确定这些相关表面的交点，与N室参数中的每一个的目标值相对应的交点。 该方法还包括将每个N室参数设置为相应的目标值。

公开(公告)号：US20070080138A1

公开(公告)日：2007-04-12

申请号：US11608964

申请日：2006-12-11

申请人： Daniel Hoffman ,  Ezra Gold

发明人： Daniel Hoffman ,  Ezra Gold

IPC分类号： G01L21/30 ,  H01L21/461 ,  B44C1/22 ,  C23F1/00 ,  H01L21/302

CPC分类号： H01J37/32174 ,  H01J37/32935

摘要： The invention involves a method of characterizing a plasma reactor chamber through the behavior of many selected plasma parameters as functions of many selected chamber parameters. The plasma parameters may be selected from a group including ion density, wafer voltage, etch rate and wafer current or other plasma parameters. The chamber parameters are selected from a group including source power, bias power, chamber pressure, magnetic coil current in different magnetic coils, gas flow rates in different gas injection zones and species composition of the gas in different gas injection zones.

摘要翻译： 本发明涉及通过许多选定的等离子体参数的作用来表征等离子体反应器室的方法，作为许多选定室参数的函数。 等离子体参数可以从包括离子密度，晶片电压，蚀刻速率和晶片电流或其它等离子体参数的组中选择。 腔室参数选自包括源功率，偏置功率，室压力，不同磁性线圈中的电磁线圈电流，不同气体注入区域中的气体流量以及不同气体注入区域中气体的种类组成。

公开(公告)号：US20060283835A1

公开(公告)日：2006-12-21

申请号：US11508540

申请日：2006-08-23

申请人： Daniel Hoffman

发明人： Daniel Hoffman

IPC分类号： G01L21/30 ,  C23F1/00 ,  H01L21/302

CPC分类号： H01J37/32174 ,  H01J37/32935

摘要： A workpiece is processed in a plasma reactor chamber in accordance with desired values of two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power. First, the chamber is characterized by performing the following steps: (a) for each one of the chamber parameters, ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to the wafer support pedestal and computing from each sample of the RF electrical parameters the values of the plasma parameters, and storing the values with the corresponding levels of the one chamber parameter as corresponding chamber parameter data; (b) for each one of the chamber parameters, deducing, from the corresponding chamber parameter data, a single variable function for each of the plasma parameters having the one chamber parameter as an independent variable; (c) constructing combinations of the functions and from the combinations, constructing surfaces defining concurrent values of the chamber parameters, each respective surface corresponding to a respective constant value of one of the plasma parameters, and storing the surfaces.

摘要翻译： 通过控制源功率和偏置功率的室参数，根据从包括离子密度，晶片电压，蚀刻速率和晶片电流的组中选择的两个等离子体参数的期望值，在等离子体反应器室中处理工件。 首先，室的特征在于执行以下步骤：（a）对于腔室参数中的每一个，斜坡化一个室参数的水平，同时在输入到晶片支撑基座的RF偏置功率上采样RF电参数，并从 RF电参数的每个样本参数等离子体参数的值，并将具有一个室参数的相应电平的值存储为对应的室参数数据; （b）对于每个室参数，从相应的室参数数据推导出具有一个室参数作为独立变量的每个等离子体参数的单个可变函数; （c）构建功能的组合和组合的组合，构造定义室参数的并发值的表面，每个相应表面对应于等离子体参数之一的相应恒定值，并存储表面。