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    METHOD FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR
    1.
    发明申请
    METHOD FOR SHAPING A MAGNETIC FIELD IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR 有权
    在磁场增强等离子体反应器中形成磁场的方法

    公开(公告)号：US20070113980A1

    公开(公告)日：2007-05-24

    申请号：US11612129

    申请日：2006-12-18

    申请人： Roger Lindley ,  Scott Hogenson ,  Daniel Hoffman

    发明人： Roger Lindley ,  Scott Hogenson ,  Daniel Hoffman

    IPC分类号： C23F1/00

    CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32688

    摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

    摘要翻译： 本文提供了用于在处理室中旋转磁场的方法。 在一个实施例中，用于旋转处理室中的磁场的方法包括形成具有初级形状的磁场; 将主要形状改变为至少两个顺序的过渡形状; 并将过渡形状改变为旋转的主要形状。 任选地，在每个步骤中，磁场可以保持在大致恒定的量级。 可选地，施加到一个或多个磁场产生线圈的最大一个电流等于零或在任何两个相邻步骤之间具有其极性反转。

    Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
    3.
    发明申请
    Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction 有权
    等离子体反应器具有最小的直流线圈，用于尖端，螺线管和镜面场，用于等离子体均匀性和器件损坏降低

    公开(公告)号：US20050167051A1

    公开(公告)日：2005-08-04

    申请号：US11046656

    申请日：2005-01-28

    申请人： Daniel Hoffman ,  Roger Lindley ,  Michael Kutney ,  Martin Salinas ,  Hamid Tavassoli ,  Keiji Horioka ,  Douglas Buchberger

    发明人： Daniel Hoffman ,  Roger Lindley ,  Michael Kutney ,  Martin Salinas ,  Hamid Tavassoli ,  Keiji Horioka ,  Douglas Buchberger

    IPC分类号： H01J37/32 ,  C23F1/00

    CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.

    摘要翻译： 一种用于加工工件的等离子体反应器，包括由侧壁和天花板限定的真空室，以及在所述室中具有工件支撑表面并且面向天花板并且包括阴极电极的工件支撑基座。 RF发生器耦合到阴极电极。 等离子体分布由覆盖工件支撑表面的第一平面中的外部环形内部电磁体控制，覆盖工件支撑表面并且具有比内部电磁体更大的直径的第二平面中的外部环形外部电磁体以及外部环形底部电磁体 在工件支撑表面下方的第三平面内。 内部，外部和底部电磁铁中的相应电源连接到电流源。

    Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
    4.
    发明申请
    Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
    使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制

    公开(公告)号：US20070251917A1

    公开(公告)日：2007-11-01

    申请号：US11414015

    申请日：2006-04-28

    申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

    发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny Doan ,  Ezra Gold ,  Paul Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel Hoffman

    IPC分类号： C03C25/68 ,  C23F1/00

    CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32449 ,  H01J2237/3347

    摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.

    摘要翻译： 等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。 该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。 通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口 和/或LF偏压电力到天花板和/或静电卡盘上的电极。 该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化 并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

    Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
    7.
    发明申请
    Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
    在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法

    公开(公告)号：US20070097580A1

    公开(公告)日：2007-05-03

    申请号：US11410782

    申请日：2006-04-24

    申请人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    发明人： Paul Brillhart ,  Richard Fovell ,  Douglas Buchberger ,  Douglas Burns ,  Kallol Bera ,  Daniel Hoffman

    IPC分类号： H02H5/04

    CPC分类号： H01L21/67109

    摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.

    摘要翻译： 在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂， 工件支撑件的内部流动通道构成制冷回路的蒸发器。 该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

    Methods to avoid unstable plasma states during a process transition
    8.
    发明申请
    Methods to avoid unstable plasma states during a process transition 失效
    在过程转换过程中避免不稳定的等离子体状态的方法

    公开(公告)号：US20070066064A1

    公开(公告)日：2007-03-22

    申请号：US11372752

    申请日：2006-03-10

    申请人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

    发明人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

    IPC分类号： H01L21/00 ,  G01L21/30 ,  H01L21/302

    CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76807

    摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.

    摘要翻译： 在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。 该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。 在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

    Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants
    9.
    发明申请
    Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants 有权

    公开(公告)号：US20060278609A1

    公开(公告)日：2006-12-14

    申请号：US11508374

    申请日：2006-08-23

    申请人： Daniel Hoffman

    发明人： Daniel Hoffman

    IPC分类号： G01L21/30 ,  C23F1/00

    CPC分类号： H01J37/32174 ,  H01J37/32935

    摘要： The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using a pair constants. Prior to plasma processing of the wafer, a determination is made of first and second constants based upon electrical characteristics of a transmission line through which RF power is coupled to the pedestal. During plasma processing of the wafer, the wafer voltage is determined by performing the steps of sampling an RF input current and an RF input voltage at the impedance match circuit; multiplying the RF input voltage by the first constant to produce a first product; multiplying the RF input current by the second constant to produce a second product; and computing a sum of the first and second products.

    METHOD AND APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE
    10.
    发明申请
    METHOD AND APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE 有权
    限制等离子体和加强流动导管的方法和装置

    公开(公告)号：US20060193102A1

    公开(公告)日：2006-08-31

    申请号：US11381399

    申请日：2006-05-03

    申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

    发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

    IPC分类号： H01T23/00

    CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

    摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

    摘要翻译： 本发明的实施例一般涉及在等离子体处理室中使用的环形环。 在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。 台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。 环形环可以由诸如碳化硅和铝的导电材料制成。