公开(公告)号：US07915610B2

公开(公告)日：2011-03-29

申请号：US12615315

申请日：2009-11-10

申请人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/10

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20100072480A1

公开(公告)日：2010-03-25

申请号：US12453295

申请日：2009-05-06

申请人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20100059756A1

公开(公告)日：2010-03-11

申请号：US12453293

申请日：2009-05-06

申请人： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78609 ,  H01L29/78618

摘要： Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

摘要翻译： 公开了一种薄膜晶体管（TFT）。 TFT可以包括通道与源极和漏极之间的中间层。 由于中间层，由于TFT的漏极区域可能发生的增加的截止电流减小。 因此，可以稳定地驱动TFT。

公开(公告)号：US08263978B2

公开(公告)日：2012-09-11

申请号：US12453295

申请日：2009-05-06

申请人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US08106397B2

公开(公告)日：2012-01-31

申请号：US11756766

申请日：2007-06-01

申请人： Jang-yeon Kwon ,  Sang-yoon Lee ,  Jong-man Kim ,  Kyung-bae Park ,  Ji-sim Jung

发明人： Jang-yeon Kwon ,  Sang-yoon Lee ,  Jong-man Kim ,  Kyung-bae Park ,  Ji-sim Jung

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/78603 ,  H01L29/78645

摘要： A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

摘要翻译： 薄膜晶体管（“TFT”）包括形成在柔性基板上的多晶硅层，其包括源极区，漏极区和沟道区，以及形成在多晶硅层的沟道区上的栅叠层，其中 栅极堆叠包括第一和第二栅极堆叠，并且第一和第二栅极堆叠之间的多晶硅层的区域是偏移区域。 还提供了制造TFT的方法。

公开(公告)号：US08102476B2

公开(公告)日：2012-01-24

申请号：US12153657

申请日：2008-05-22

申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC分类号： G02F1/1333

CPC分类号： G02F1/136213 ,  G02F2203/01

摘要： A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.

摘要翻译： 提供了包括氧化物半导体薄膜晶体管的显示装置。 显示装置包括至少一个薄膜晶体管和至少一个存储电容器。 存储电容器包括由透明氧化物半导体形成的存储电极和存储电极之上的像素电极。 像素电极可以与存储电极分离所需的距离。

公开(公告)号：US07943985B2

公开(公告)日：2011-05-17

申请号：US12219661

申请日：2008-07-25

申请人： Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631

摘要： Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.

摘要翻译： 提供氧化物半导体薄膜晶体管（TFT）及其制造方法。 所述方法包括在衬底上形成沟道层，在沟道层的相对侧形成源极和漏极，并且通过将氧化材料与沟道层的表面相接触来氧化沟道层的表面， 通道层的表面。 由于氧化剂处理通道层的表面，可以更有效地控制天然产生的过量载体或制造过程中产生的过量载体。

公开(公告)号：US07851802B2

公开(公告)日：2010-12-14

申请号：US12219265

申请日：2008-07-18

申请人： Kyung-bae Park ,  Seon-mi Yoon ,  Sang-yoon Lee ,  Jae-young Choi ,  Hyeon-jin Shin ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Kyung-bae Park ,  Seon-mi Yoon ,  Sang-yoon Lee ,  Jae-young Choi ,  Hyeon-jin Shin ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L31/036

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L29/66765 ,  Y10S977/762 ,  Y10S977/778

摘要： Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.

摘要翻译： 示例性实施例涉及由多晶硅（Si）薄膜形成的多晶硅（Si）薄膜，薄膜晶体管（TFT）及其制造方法。 多晶Si薄膜的制造方法包括在基板上形成由非晶Si形成的有源层，在有源层上涂覆金纳米棒，并将红外线照射到金纳米棒上以结晶活性层。

公开(公告)号：US20100127257A1

公开(公告)日：2010-05-27

申请号：US12656256

申请日：2010-01-22

申请人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

公开(公告)号：US07682950B2

公开(公告)日：2010-03-23

申请号：US11852774

申请日：2007-09-10

申请人： Kyung-bae Park ,  Kyung-yeup Kim ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

发明人： Kyung-bae Park ,  Kyung-yeup Kim ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

IPC分类号： H01L21/02

CPC分类号： H01L21/268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1285

摘要： Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the laterally crystallized semiconductor layer comprises: forming a semiconductor layer on a substrate; irradiating laser beams on the semiconductor layer; splitting the laser beams using a prism sheet comprising an array of a plurality of prisms, advancing the laser beams toward the semiconductor layer to alternately form first and second areas in the semiconductor layer so as to fully melt the first areas, wherein the laser beams are irradiated onto the first areas, and the laser beams are not irradiated onto the second areas; and inducing the first areas to be laterally crystallized using the second areas as seeds.

摘要翻译： 提供了制造横向结晶半导体层的方法和使用该方法制造薄膜晶体管（TFT）的方法。 制造横向结晶的半导体层的方法包括：在衬底上形成半导体层; 在半导体层上照射激光束; 使用包括多个棱镜的阵列的棱镜片分割激光束，将激光束朝向半导体层前进，以在半导体层中交替地形成第一和第二区域，以便使第一区域完全熔化，其中激光束 照射到第一区域上，激光束不照射到第二区域上; 并且使用第二区域作为种子诱导第一区域被横向结晶。