摘要:
Improved proximity indicators and turn indicators for hazardous operating conditions. Such indicators provide increased visibility and safety to observers and operators of vehicles. Such lights may be comprised of separate devices or may be comprised of flashing or strobing brake, accelerator, and/or turn indicators positioned at the front, sides, top, and rear of a vehicle. The intensity and flashing pattern of such indicators vary according to the operating settings of a vehicle, the proximity of obstacles including other vehicles, the desire of the operator, and according to the prevailing operating or weather conditions.
摘要:
Embodiments of methods and systems according to the application can transmit voice data by using a wireless LAN and a Bluetooth. One system embodiment can include a headset, an AP, and a terminal device to communicate with the headset according to a first protocol (e.g., Bluetooth) to transmit downlink voice data to the headset and to receive uplink voice data from the headset and to communicate with the AP according to a second protocol (e.g., wireless LAN) to transmit the uplink voice data to the AP and to receive the downlink voice data from the AP. The terminal device can receive the downlink voice data from the AP after the terminal device sends a PS-Poll frame to the AP within a period during which a transmission/reception between the terminal device and the headset is not to be performed.
摘要:
The present invention relates to a method of manufacturing a thin film transistor array panel and apparatus and more particularly to an apparatus containing an in-situ fluorine generation chamber.
摘要:
A method of fabricating a semiconductor device and a fabrication system of the semiconductor device are provided. The method includes sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film, forming a photoresist film on the dielectric film, performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern, and etching the dielectric film and the film to be etched using the photoresist film pattern.