摘要:
The present invention relates to a method of manufacturing a thin film transistor array panel and apparatus and more particularly to an apparatus containing an in-situ fluorine generation chamber.
摘要:
The present invention relates to a method of manufacturing a thin film transistor array panel and apparatus and more particularly to an apparatus containing an in-situ fluorine generation chamber.
摘要:
The present invention relates to a method of manufacturing a thin film transistor array panel and apparatus and more particularly to an apparatus containing an in-situ fluorine generation chamber.
摘要:
A swing control system for a hybrid construction machine has a swing operating lever, an electric swing motor, a speed detection sensor which detects the rotary speed of a swing motor, a controller that calculates the driving speed of the swing motor by a swing operating signal created by the operation of the swing operating lever and by a detecting signal of the rotary speed, an inverter which drives the swing motor by a control signal from the controller, a swing inertia detector that detects the swing inertia of equipment and an inertia torque compensator which compares the torque compensation value in accordance with the equipment inertia, and outputs a calculated torque value for controlling the swing motor to the inverter.
摘要:
A discharge system of a stored energy for a construction machine is provided, which includes the energy storage, an electric discharge device discharging energy stored in the energy storage, and an energy cooling portion increasing the heat dissipation capacity of the electric discharge device by cooling heat generated in the electric discharge device for a time when the energy stored in the energy storage is discharged to the electric discharge device. Since the heat generated in the electric discharge device is cooled by a cooling device while the energy stored in the energy storage is discharged to the electric discharge device, the heat dissipation capacity of the electric discharge device is increased to shorten the discharge time. Also, the operation period of the cooling device is controlled in proportion to the residual voltage of the energy storage, and thus the cooling efficiency is maximized.
摘要:
A non-volatile memory device includes field insulating layer patterns on a substrate to define an active region of the substrate, upper portions of the field insulating layer patterns protruding above an upper surface of the substrate, a tunnel insulating layer on the active region, a charge trapping layer on the tunnel insulating layer, a blocking layer on the charge trapping layer, first insulating layers on upper surfaces of the field insulating layer patterns, and a word line structure on the blocking layer and first insulating layers.
摘要:
A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
摘要:
A method of electrically eliminating defective solar cell units that are disposed within an integrated solar cells module and a method of trimming an output voltage of the integrated solar cells module are provided, where the solar cells module has a large number (e.g., 50 or more) of solar cell units integrally disposed therein and initially connected in series one to the next. The method includes providing a corresponding plurality of repair pads, each integrally extending from a respective electrode layer of the solar cell units, and providing a bypass conductor integrated within the module and extending adjacent to the repair pads. Pad-to-pad spacings and pad-to-bypass spacings are such that pad-to-pad connecting bridges may be selectively created between adjacent ones of the repair pads and such that pad-to-bypass connecting bridges may be selectively created between the repair pads and the adjacently extending bypass conductor.
摘要:
Methods of programming data in a non-volatile memory cell are provided. A memory cell according to some embodiments may include a gate structure that includes a tunnel oxide layer pattern, a floating gate, a dielectric layer and a control gate sequentially stacked on a substrate, impurity regions that are formed in the substrate at both sides of the gate structure, and a conductive layer pattern that is arranged spaced apart from and facing the floating gate. Embodiments of such methods may include applying a programming voltage to the control gate, grounding the impurity regions and applying a fringe voltage to the conductive layer pattern to generate a fringe field in the floating gate.
摘要:
A non-volatile memory device includes a selection transistor coupled to a bit line. The device also includes a plurality of memory cells serially coupled to the selection transistor and at least one dummy cell located between the plurality of memory cells. The dummy cell is turned off during a programming operation of a memory cell located between the dummy cell and the selection transistor.