公开(公告)号：USD706500S1

公开(公告)日：2014-06-03

申请号：US29445028

申请日：2013-02-06

Applicant: Jun Hu

Designer： Jun Hu

公开(公告)号：US08575685B2

公开(公告)日：2013-11-05

申请号：US13199381

申请日：2011-08-25

Applicant: Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Lingpeng Guan ,  Jun Hu

Inventor： Madhur Bobde ,  Anup Bhalla ,  Hamza Yilmaz ,  Lingpeng Guan ,  Jun Hu

IPC: H01L29/78

CPC classification number: H01L29/7802 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/407 ,  H01L29/66712 ,  H01L29/78 ,  H01L29/7811

Abstract: This invention discloses a semiconductor power device formed in a semiconductor substrate comprises a highly doped region near a top surface of the semiconductor substrate on top of a lightly doped region. The semiconductor power device further comprises a body region, a source region and a gate disposed near the top surface of the semiconductor substrate and a drain disposed at a bottom surface of the semiconductor substrate. The semiconductor power device further comprises source trenches opened into the highly doped region filled with a conductive trench filling material in electrical contact with the source region near the top surface. The semiconductor power device further comprises a buried field ring regions disposed below the source trenches and doped with dopants of opposite conductivity from the highly doped region. In an alternate embodiment, the semiconductor power device further comprises doped regions surrounded the sidewalls of the source trenches and doped with a dopant of a same conductivity type of the buried field ring regions to function as a charge supply path.

公开(公告)号：US08553712B2

公开(公告)日：2013-10-08

申请号：US12362440

申请日：2009-01-29

Applicant: Donna Ghosh ,  Qingxin Chen ,  Christopher Gerard Lott ,  Jun Hu ,  Ravindra Garach ,  Rashid Ahmed Akbar Attar

Inventor： Donna Ghosh ,  Qingxin Chen ,  Christopher Gerard Lott ,  Jun Hu ,  Ravindra Garach ,  Rashid Ahmed Akbar Attar

IPC: G01R31/08 ,  H04W4/00 ,  H04J3/17

CPC classification number: H04W72/085 ,  H04L5/0044 ,  H04L5/0064

Abstract: Carrier management in a wireless communication device assigned a set of two or more carriers by a wireless communication network is disclosed. In one aspect, a method of carrier management includes transmitting data over the wireless communication network on one or more carriers forming a subset of active carriers from the set of carriers assigned to the wireless communication device. A first performance metric is determined indicative of operating conditions across the set of carriers assigned to the wireless communication device. A desired number of carriers on which to transmit data based on the first performance metric is determined. The desired number of carriers on which to transmit data is compared with the number of carriers in the subset of active carriers. The subset of active carriers is dynamically adjusted based on the comparison and subsequent data is transmitted over the wireless communication network using the adjusted subset of active carriers.

Abstract translation: 公开了通过无线通信网络分配了一组两个或多个载波的无线通信设备中的载波管理。 一方面，一种载波管理方法包括在一个或多个载波上通过无线通信网络从分配给无线通信设备的载波集合形成有源载波子集的数据。 确定指示分配给无线通信设备的载波集合上的操作条件的第一性能度量。 确定基于第一性能度量传输数据的期望数量的载波。 将要发送数据的期望数量的载波与有源载波子集中的载波数进行比较。 基于比较动态地调整活动载波的子集，并且使用所调整的有源载波子集通过无线通信网络发送随后的数据。

公开(公告)号：US20130113020A1

公开(公告)日：2013-05-09

申请号：US13613236

申请日：2012-09-13

Applicant: Donghua Liu ,  Wenting Duan ,  Wensheng Qian ,  Jun Hu ,  Jing Shi

Inventor： Donghua Liu ,  Wenting Duan ,  Wensheng Qian ,  Jun Hu ,  Jing Shi

IPC: H01L29/737 ,  H01L21/331

CPC classification number: H01L29/66242 ,  H01L29/0821 ,  H01L29/7371

Abstract: A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.

Abstract translation: 公开了一种SiGe HBT，其包括：硅衬底; 形成在硅衬底中的浅沟槽场氧化物; 形成在每个浅沟槽场氧化物的底部的伪掩埋层; 形成在所述硅衬底的表面下方的集电极区域，所述集电极区域夹在所述浅沟槽场氧化物之间和所述伪埋层之间; 形成在每个浅沟槽场氧化物上方的多晶硅栅极，其厚度大于150nm; 多晶硅栅极和集电极区域上的基极区域; 发射极区隔离氧化物; 并且发射极区域上的发射极区域隔离氧化物和基极区域的一部分。 多晶硅栅极通过CMOS工艺中的MOSFET的栅极多晶硅工艺形成。 还公开了制造SiGe HBT的方法。

公开(公告)号：US08420475B2

公开(公告)日：2013-04-16

申请号：US12975545

申请日：2010-12-22

Applicant: Tzuyin Chiu ,  TungYuan Chu ,  Wensheng Qian ,  YungChieh Fan ,  Donghua Liu ,  Jun Hu

Inventor： Tzuyin Chiu ,  TungYuan Chu ,  Wensheng Qian ,  YungChieh Fan ,  Donghua Liu ,  Jun Hu

IPC: H01L21/8238

CPC classification number: H01L29/732 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/7371

Abstract: This invention published a parasitic vertical PNP bipolar transistor in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process; the bipolar transistor comprises a collector, a base and an emitter. Collector is formed by active region with p-type ion implanting layer. It connects a p-type buried layer which formed in the bottom region of STI (Shallow Trench Isolation). The collector terminal connection is through the p-type buried layer and the adjacent active region. The base is formed by active region with n type ion implanting which is on the collector. Its connection is through the original p-type epitaxy layer after converting to n-type. The emitter is formed by the p-type epitaxy layer on the base region with heavy p-type doped. This invention also comprises the fabrication method of this parasitic vertical PNP bipolar in BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process. And this PNP bipolar transistor can be used as the IO (Input/Output) device in high speed, high current and power gain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits. It also provides a device option with low cost.

Abstract translation: 本发明公开了BiCMOS（双极互补金属氧化物半导体）工艺中的寄生垂直PNP双极晶体管; 双极晶体管包括集电极，基极和发射极。 集电极由具有p型离子注入层的有源区形成。 它连接形成在STI底部区域（浅沟槽隔离）的p型掩埋层。 集电极端子连接通过p型掩埋层和相邻的有源区。 基极由在集电极上的n型离子注入的有源区形成。 其连接是通过原始的p型外延层转换为n型。 发射极由重p型掺杂的基极区上的p型外延层形成。 本发明还包括BiCMOS（双极互补金属氧化物半导体）工艺中该寄生垂直PNP双极的制造方法。 而这种PNP双极晶体管可以用作高速，大电流和功率增益BiCMOS（双极互补金属氧化物半导体）电路中的IO（输入/输出）器件。 它还提供低成本的设备选项。

公开(公告)号：US08189626B2

公开(公告)日：2012-05-29

申请号：US12211022

申请日：2008-09-15

Applicant: Thawatt Gopal ,  Jun Hu

Inventor： Thawatt Gopal ,  Jun Hu

IPC: H04J3/06

CPC classification number: H04B7/022 ,  H04J3/0682 ,  H04W4/06

Abstract: In a method for multicast and broadcast synchronization a data payload frame is generated from a data payload. A frame number is assigned to the data payload frame, wherein the frame number includes a generating time of the data payload frame. The data payload frame is distributed to a plurality of base stations in a wireless access system. The offset spans a travel time of a data payload frame from the controller to the plurality of base stations as well as a scheduling time and a multiplexing time.

Abstract translation: 在多播和广播同步的方法中，从数据有效载荷产生数据有效载荷帧。 帧号被分配给数据有效载荷帧，其中帧号包括数据有效载荷帧的生成时间。 数据有效载荷帧被分配到无线接入系统中的多个基站。 偏移量跨越从控制器到多个基站的数据有效载荷帧的传播时间以及调度时间和复用时间。

公开(公告)号：US07980628B2

公开(公告)日：2011-07-19

申请号：US12029544

申请日：2008-02-12

Applicant: Jun Hu ,  Robert Weist

Inventor： Jun Hu ,  Robert Weist

IPC: A47C7/62 ,  B60R7/04

CPC classification number: B60N2/3013 ,  B60N2/005 ,  B60N2/305 ,  B60N2/3095

Abstract: A folding seat combination is configured for use with and installation on a vehicle such as a golf cart type recreational vehicle. The folding seat combination provides selective positioning of seat, footrest, and backrest components, respectively each between upright and downward positions thereof, to alternately accommodate easy transport of either of additional passengers or materials. With the seat and footrest features in their upright positions and the backrest in its upward position, optional golf bag securing straps may be used to secure golf bags in the cart, as so configured for the transportation of materials rather than passengers in such location. With the footrest in an upright position, relatively loose items stored in an otherwise relatively open storage area of the cart may be contained and prevented from bouncing out during operation the cart.

Abstract translation: 折叠座椅组合被配置为与诸如高尔夫球车型娱乐车辆的车辆一起使用并安装在其上。 折叠座椅组合提供了座椅，脚踏板和靠背部件的选择性定位，分别在其直立和向下的位置之间，以便交替容纳任何一个乘客或材料的容易运输。 由于座椅和脚踏板的直立位置和靠背处于向上的位置，可选的高尔夫球袋固定带可用于将高尔夫球袋固定在推车中，如此构造，用于运输材料而不是在这样的位置的乘客。 在脚踏板处于直立位置时，存放在推车的另外相对开放的存放区域中的相对松散的物品可能被包含并防止在推车的操作期间弹跳。

公开(公告)号：US20110156202A1

公开(公告)日：2011-06-30

申请号：US12978552

申请日：2010-12-25

Applicant: Tzuyin CHIU ,  TungYuan Chu ,  Wensheng Qian ,  YungChieh Fan ,  Donghua Liu ,  Jun Hu

Inventor： Tzuyin CHIU ,  TungYuan Chu ,  Wensheng Qian ,  YungChieh Fan ,  Donghua Liu ,  Jun Hu

IPC: H01L29/70

CPC classification number: H01L29/0821 ,  H01L21/743 ,  H01L21/76224 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7371 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A parasitic vertical PNP device in one type of BiCMOS process with shallow trench isolation (STI) comprises a collector formed by a p type impurity ion implantation layer inside active area, the bottom of collector connects to a p type buried layer, the p type pseudo buried layer is formed in bottom of shallow trench at both sides of collector active region through ion implantation, deep contacts through field oxide to connect pseudo buried layers and to pick up the collector; a base, formed by n type impurity ion implantation layer which sits on top of above stated collector; an emitter, a p type epitaxy layer lies above base and is connected out directly by a metal contact. Part of the p type epitaxy layer is converted into n type, which serves as connection path of base. Present invented PNP can be used as output device of BiCMOS high frequency circuit. It has a small device area and conduction resistance.

Abstract translation: 具有浅沟槽隔离（STI）的一种类型的BiCMOS工艺中的寄生垂直PNP器件包括由有源区内的ap型杂质离子注入层形成的集电极，集电极的底部连接到ap型掩埋层，p型伪掩埋层 通过离子注入形成在集电极有源区两侧的浅沟底部，通过场氧化物深接触连接伪埋层并拾取收集器; 由位于上述收集器顶部的n型杂质离子注入层形成的基底; 发射极，p型外延层位于基底之上，并通过金属接触直接连接。 p型外延层的一部分被转换为n型，其用作基极的连接路径。 本发明的PNP可用作BiCMOS高频电路的输出装置。 它具有小的器件面积和导通电阻。

公开(公告)号：US20110148427A1

公开(公告)日：2011-06-23

申请号：US13059869

申请日：2009-08-26

Applicant: Xin Huang ,  Jun Hu ,  Qiang Wang

Inventor： Xin Huang ,  Jun Hu ,  Qiang Wang

IPC: G01R29/12

CPC classification number: G01N27/60 ,  G01N33/442

Abstract: A fixture can include a test fixture that holds an object whose electrostatic charge characteristics are to be measured, means for moving a piece of rubbing material into contact with the object, and means for rubbing a surface of the object. A method for measuring the electrostatic charge characteristics of an object using a test fixture can include: placing the object in the test fixture, moving a piece of rubbing material into contact with the object and rubbing a surface of the object with the piece of rubbing material for a period of time. The rubbing causes an electrostatic charge to be built up on the surface of the object. The electrostatic charge characteristics of the object can be measured and the measured electrostatic charge characteristics of the object can be displayed.

Abstract translation: 固定装置可以包括固定要测量其静电荷特性的物体的测试夹具，用于将一块摩擦材料移动到与物体接触的装置，以及用于摩擦物体表面的装置。 使用测试夹具测量物体的静电电荷特性的方法可以包括：将物体放置在测试夹具中，使一块摩擦材料与物体接触并用该摩擦材料摩擦物体的表面 一段时间。 摩擦会导致在物体表面上形成静电电荷。 可以测量物体的静电电荷特性，并且可以显示物体的测量的静电电荷特性。

公开(公告)号：US20100291882A1

公开(公告)日：2010-11-18

申请号：US12775323

申请日：2010-05-06

Applicant: Jun Hu ,  Reza Shahidi ,  Gregory R. Lie ,  Ravindra M. Garach ,  Shian-De Ju ,  Yu-Chuan Lin

Inventor： Jun Hu ,  Reza Shahidi ,  Gregory R. Lie ,  Ravindra M. Garach ,  Shian-De Ju ,  Yu-Chuan Lin

IPC: H04B1/38

CPC classification number: H04W72/0473 ,  H04W72/044 ,  H04W72/1215 ,  H04W88/06 ,  Y02D70/1222 ,  Y02D70/1224 ,  Y02D70/1242 ,  Y02D70/1262 ,  Y02D70/142 ,  Y02D70/146 ,  Y02D70/40

Abstract: A device and method for resolving conflicts between air interfaces in a wireless communication system are disclosed. In one embodiment, the method comprises communicating over a first air interface, receiving a request for resources for concurrent use in communicating over a second air interface, determining that a conflict does not exist between resources for the first air interface and at least a portion of the requested resources for the second air interface, and concurrently communicating over the first air interface using resources for the first air interface and communicating over the second air interface using at least a portion of the requested resources for the second air interface.

Abstract translation: 公开了一种用于解决无线通信系统中的空中接口之间的冲突的装置和方法。 在一个实施例中，该方法包括在第一空中接口上进行通信，接收对用于在第二空中接口进行通信中并发使用的资源的请求，确定在第一空中接口的资源和第一空中接口的资源之间不存在冲突 用于第二空中接口的所请求的资源，并且通过第一空中接口的资源同时进行通信，并使用第二空中接口的所请求的资源的至少一部分通过第二空中接口进行通信。